WeEn Semiconductors BTA425X-800BT

ECCN (US)

EAR99

HTS

8541.30.00.80

Maximum Rate of Rise of Off-State Voltage (V/us)

2000(Min)

Maximum Rate of Rise of On-State Current (A/us)

100

Maximum Gate Trigger Voltage (V)

1.3

Maximum Gate Trigger Current (mA)

50

Surge Current Rating (A)

275

Maximum Holding Current (mA)

75

Repetitive Peak Reverse Voltage (V)

800

Peak On-State Voltage (V)

1.5@35A

Repetitive Peak Forward Blocking Voltage (V)

800

RMS On-State Current (A)

25

Repetitive Peak Off-State Current (mA)

2

Maximum Latching Current (mA)

100

Peak Gate Power Dissipation (W)

5

Average Gate Power Dissipation (W)

0.5

Circuit Fusing Consideration (A²S)

312.5

AC Switch

无

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

150

Supplier Package

TO-220F

Military

无

Mounting

通孔

Package Height

15.8(Max)

Package Length

10.3(Max)

Package Width

4.6(Max)

PCB changed

3

Tab

Tab

包装

Rail

引脚数量

3

RoHS状态

是,有豁免