WeEn Semiconductors WNSC2M20120R6Q
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WNSC2M20120R6Q
2700-WNSC2M20120R6Q
晶体管 - FET,MOSFET - 单个
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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W
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WNSC2M20120R6Q详情
WeEn Semiconductors WNSC2M20120R6Q重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
1.2kV
Drain current
94A
Pulsed drain current
200A
Case
TO247-4
Gate-source voltage
-12...22V
Mounting
THT
Kind of package
tube
Kind of channel
enhanced
Features of semiconductor devices
Kelvin terminal
Gross weight
5g
Certificates
RoHS compliant
Power dissipation
750W
Gate charge
32nC
On-state resistance
20mΩ
WNSC2M20120R6Q拓展信息







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