Welwyn PCF2010H-12-1K6WI

包装/外壳

TO-247-3

Vds - Drain-Source Breakdown Voltage

150 V

Typical Turn-On Delay Time

20 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

400 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

IXYS

Brand

IXYS

Qg - Gate Charge

87 nC

Tradename

HiPerFET

Rds On - Drain-Source Resistance

8.5 mOhms

RoHS

Details

Typical Turn-Off Delay Time

100 ns

Id - Continuous Drain Current

130 A

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

27 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET