Welwyn PCF2010H-12-866KDI

包装/外壳

TO-252-3

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

6.8 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

42 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.011640 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IRFR120PBF

Manufacturer

Vishay

Brand

Vishay / Siliconix

Qg - Gate Charge

16 nC

Rds On - Drain-Source Resistance

270 mOhms

RoHS

Details

Typical Turn-Off Delay Time

18 ns

Id - Continuous Drain Current

7.7 A

系列

IRFR

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

27 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET