Welwyn PCF2512-02-698RDA

包装/外壳

TO-92-3

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

625 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

40

Collector-Emitter Saturation Voltage

500 mV

Unit Weight

0.007055 oz

Minimum Operating Temperature

-

Factory Pack QuantityFactory Pack Quantity

10000

Mounting Styles

通孔

Gain Bandwidth Product fT

50 MHz

Manufacturer

onsemi

Brand

onsemi / Fairchild

Maximum DC Collector Current

500 mA

RoHS

Details

Collector- Emitter Voltage VCEO Max

200 V

系列

KSP43

包装

Bulk

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

200 V

连续集电极电流

0.5 A

产品类别

Bipolar Transistors - BJT

宽度

3.93 mm

高度

4.7 mm

长度

4.7 mm