RC55C-274KBI详情
Welwyn RC55C-274KBI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
DPAK-3
Vds - Drain-Source Breakdown Voltage
100 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qualification
AEC-Q101
Pd - Power Dissipation
2.5 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Unit Weight
0.011640 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
2500
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Part # Aliases
FQD8P10TM_F085
Manufacturer
onsemi
Brand
onsemi / Fairchild
Qg - Gate Charge
15 nC
Tradename
QFET
Rds On - Drain-Source Resistance
530 mOhms
RoHS
Details
Id - Continuous Drain Current
6.6 A
系列
FQD8P10TM_F085
包装
MouseReel
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
产品类别
MOSFET
晶体管类型
1 P-Channel
产品类别
MOSFET
宽度
6.22 mm
高度
2.39 mm
长度
6.73 mm
RC55C-274KBI拓展信息








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