RC55T-287KBI详情
Welwyn RC55T-287KBI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
DPAK-3
Vds - Drain-Source Breakdown Voltage
40 V
Vgs th - Gate-Source Threshold Voltage
2 V
Qualification
AEC-Q101
Pd - Power Dissipation
227 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.011640 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
2500
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Part # Aliases
FDD9407_F085
Manufacturer
onsemi
Brand
onsemi / Fairchild
Qg - Gate Charge
112 nC
Tradename
PowerTrench
Rds On - Drain-Source Resistance
2 mOhms
RoHS
Details
Id - Continuous Drain Current
100 A
系列
FDD9407_F085
包装
MouseReel
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
产品类别
MOSFET
晶体管类型
1 N-Channel
产品类别
MOSFET
宽度
6.22 mm
高度
2.39 mm
长度
6.73 mm
RC55T-287KBI拓展信息








哦! 它是空的。