Welwyn RC55V-3K57FI

包装/外壳

TO-263-3

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

12 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Qualification

AEC-Q101

Pd - Power Dissipation

333 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 16 V, + 16 V

Unit Weight

0.139332 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

800

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

FDB9503L_F085

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

255 nC

Rds On - Drain-Source Resistance

2.6 mOhms

RoHS

Details

Typical Turn-Off Delay Time

700 ns

Id - Continuous Drain Current

110 A

包装

切割胶带

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

86 ns

产品类别

MOSFET

晶体管类型

1 P-Channel

产品类别

MOSFET