RC65PY-243KDI详情
Welwyn RC65PY-243KDI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-220F-3
Vds - Drain-Source Breakdown Voltage
650 V
Typical Turn-On Delay Time
10 ns
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
33.5 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Unit Weight
0.068784 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1000
Mounting Styles
通孔
Forward Transconductance - Min
11 S
Channel Mode
Enhancement
Manufacturer
Rectron
Brand
Rectron
Qg - Gate Charge
45 nC
Rds On - Drain-Source Resistance
260 mOhms
RoHS
Details
Typical Turn-Off Delay Time
55 ns
Id - Continuous Drain Current
15 A
包装
Tube
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
上升时间
5 ns
产品类别
MOSFET
晶体管类型
1 N-Channel
产品类别
MOSFET
RC65PY-243KDI拓展信息








哦! 它是空的。