Welwyn WINT0805LF111150A

包装/外壳

TO-220-3

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

39 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

94 nC

Rds On - Drain-Source Resistance

150 mOhms

RoHS

Details

Id - Continuous Drain Current

24 A

系列

FCPF150N65F

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

产品类别

MOSFET

产品类别

MOSFET

宽度

4.9 mm

高度

16.07 mm

长度

10.36 mm