Will Semiconductor Ltd WNT2F04-3/TR
- 收藏
- 对比
WNT2F04-3/TR
2436-WNT2F04-3/TR
晶体管 - 双极性晶体管(BJT)- 单个
--
大陆
立即发货

Description: Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon,
1最小包装量--
WNT2F04-3/TR详情
Will Semiconductor Ltd WNT2F04-3/TR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
3
晶体管元件材料
SILICON
Part Life Cycle Code
接触制造商
Ihs Manufacturer
WILL SEMICONDUCTOR LTD
Package Description
SMALL OUTLINE, R-PDSO-G3
Number of Elements
1
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Transition Frequency-Nom (fT)
300 MHz
Turn-off Time-Max (toff)
250 ns
Turn-on Time-Max (ton)
70 ns
ECCN 代码
EAR99
端子位置
DUAL
终端形式
鸥翼
Reach合规守则
unknown
JESD-30代码
R-PDSO-G3
配置
SINGLE
晶体管应用
AMPLIFIER
极性/通道类型
NPN
集电极电流-最大值(IC)
0.2 A
最小直流增益(hFE)
60
集电极-发射器电压-最大值
40 V
WNT2F04-3/TR拓展信息
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
Taiwan Semiconductor
Taiwan Semiconductor
Taiwan Semiconductor
Taiwan Semiconductor
Taiwan Semiconductor
Taiwan Semiconductor
Taiwan Semiconductor







哦! 它是空的。