Winbond Electronics Corporation W29N08GVSIAF

表面安装

YES

终端数量

48

EU RoHS

Compliant

ECCN (US)

3A991.b.1.a

HTS

8542.32.00.71

Automotive

有

PPAP

Unknown

Cell Type

SLC NAND

Chip Density (bit)

8G

Address Bus Width (bit)

29

Number of Bits/Word (bit)

8

Number of Words

8M

Programmability

有

Timing Type

Synchronous

Maximum Erase Time (S)

0.01/Block

Maximum Programming Time (ms)

0.7

Interface Type

Serial

Minimum Operating Supply Voltage (V)

2.7

Typical Operating Supply Voltage (V)

3.3

Maximum Operating Supply Voltage (V)

3.6

Programming Voltage (V)

2.7 to 3.6

Program Current (mA)

25

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

85

Supplier Temperature Grade

Industrial

Command Compatible

无

ECC Support

有

Support of Page Mode

无

Mounting

表面贴装

Package Height

1

Package Width

18.4

Package Length

12

PCB changed

48

Supplier Package

TSOP-I

Supply Voltage-Nom (Vsup)

2.7V - 3.6V

Package Description

TSOP1,

Package Style

SMALL OUTLINE, THIN PROFILE

Number of Words Code

1000000000

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-40 °C

Operating Temperature-Max

85 °C

Rohs Code

有

Manufacturer Part Number

W29N08GVSIAF

Package Code

TSOP1

Package Shape

RECTANGULAR

Manufacturer

Winbond Electronics Corp

Part Life Cycle Code

活跃

Ihs Manufacturer

WINBOND ELECTRONICS CORP

Risk Rank

5.75

零件状态

活跃

类型

SLC NAND Flash

技术

CMOS

端子位置

DUAL

终端形式

鸥翼

功能数量

1

端子间距

0.5 mm

Reach合规守则

compliant

引脚数量

48

JESD-30代码

R-PDSO-G48

电源电压-最大值(Vsup)

3.6 V

温度等级

INDUSTRIAL

电源电压-最小值(Vsup)

2.7 V

速度

40MHz

操作模式

ASYNCHRONOUS

建筑学

Sectored

组织结构

High Quality Single Level Cell (SLC) Technology Standard ONFI NAND Command Set

座位高度-最大

1.2 mm

内存宽度

8

记忆密度

8Gb

并行/串行

PARALLEL

内存IC类型

FLASH

编程电压

3.3 V

引导模块

无

温度

40ºC ~ 85ºC / -40ºC ~ 105ºC

宽度

12 mm

长度

18.4 mm