Wuxi NCE Power Semiconductor NCE2010E
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NCE2010E
3125-NCE2010E
晶体管 - FET,MOSFET - 单个
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20V 7A 1.5W 18mΩ@4.5V,6.5A 900mV@250uA 2 N-Channel TSSOP-8 MOSFETs ROHS
1最小包装量--
NCE2010E详情
Wuxi NCE Power Semiconductor NCE2010E重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
20V
Power Dissipation (Pd)
1.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)
18mΩ@4.5V,6.5A
Gate Threshold Voltage (Vgs(th)@Id)
900mV@250uA
Package
Tape & Reel (TR)
类型
2 N-Channel
配置
Common Drain
Continuous Drain Current (Id)
7A
NCE2010E拓展信息
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor
Wuxi NCE Power Semiconductor








哦! 它是空的。