Wuxi NCE Power Semiconductor NCE65T2K4I

RoHS

true

Drain Source Voltage (Vdss)

650V

Drain Source On Resistance (RDS(on)@Vgs,Id)

2.2Ω@10V,1A

Power Dissipation (Pd)

21W

Gate Threshold Voltage (Vgs(th)@Id)

3.5V@70uA

Reverse Transfer Capacitance (Crss@Vds)

0.2pF@50V

Input Capacitance (Ciss@Vds)

120pF@50V

Total Gate Charge (Qg@Vgs)

3.5nC@10V

Package

Tube-packed

操作温度

-55℃~+150℃@(Tj)

类型

1 N-Channel

Continuous Drain Current (Id)

2A