Xilinx XCV2000E7BG728C0798

包装/外壳

ITO-220AB-F

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

30 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

32 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.000071 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

19 nC

Rds On - Drain-Source Resistance

210 mOhms

RoHS

Details

Typical Turn-Off Delay Time

111 ns

Id - Continuous Drain Current

19 A

包装

Tube

子类别

MOSFETs

技术

Si

通道数量

1 Channel

上升时间

65 ns

产品类别

MOSFET

晶体管类型

N-Channel

产品类别

MOSFET