类别是'category.存储器' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 类型 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 电压 - 供电 | 端子位置 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 建筑学 | 数据总线宽度 | 组织结构 | 输出特性 | 无卤素 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 产品类别 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 输出启用 | 页面尺寸 | 刷新周期 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 产品类别 | 组织的记忆 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||||||||||||||||||
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![]() | 25LC080AT-E/ST | Microchip Technology | 数据表 | 10000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8-TSSOP | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2007 | 活跃 | 1 (Unlimited) | 125°C | -40°C | 2.5V~5.5V | 10MHz | 25LC080A | SPI, Serial | 5.5V | 2.5V | 8Kb 1K x 8 | 6mA | 10MHz | 100 ns | EEPROM | SPI | 5ms | 8 kb | 10MHz | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 25LC040AT-E/MNY | Microchip Technology | 数据表 | 1650 In Stock | - | 最小起订量: 1 最小包装量: 1 | 19 Weeks | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2012 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 25LC040A | 8 | 不合格 | 5.5V | 3/5V | 2.5V | SPI, Serial | 4Kb 512 x 8 | 5mA | SYNCHRONOUS | 10MHz | 50 ns | EEPROM | SPI | 5ms | 4 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 750μm | 2mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81284Z36B-200IV | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-119 | 200 MHz | FBGA | SDR | 1.8, 2.5 V | 1.7, 2.3 V | Synchronous | 4 MWords | 36 Bit | 2, 2.7 V | 表面贴装 | 有 | 200 MHz | + 85 C | 3.6 V | - 40 C | 10 | 2.3 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | NBT SRAM | N | SDR | Industrial grade | -40 to 85 °C | Tray | GS81284Z36B | NBT Pipeline/Flow Through | Memory & Data Storage | 119 | 144 Mbit | 4 | 385 mA, 475 mA | 7.5 ns | Flow-Through/Pipelined | 4 M x 36 | 21 Bit | SRAM | 144 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS82582QT19GE-333I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | QDR-II | 有 | 10 | SigmaQuad-II+ | 1.9 V | Details | 333 MHz | Parallel | 1.7 V | - 40 C | + 85 C | SMD/SMT | Tray | GS82582QT19GE | SigmaQuad-II+ B2 | 288 Mbit | 1.02 A | 16 M x 18 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CAT25010VP2I-GT3 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | e4 | yes | Obsolete | 1 (Unlimited) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.8V~5.5V | DUAL | 1 | 5V | 0.5mm | CAT25010 | 8 | 5V | SPI, Serial | 1Kb 128 x 8 | 2mA | 10MHz | 75 ns | EEPROM | SPI | 无卤素 | 5ms | 1 kb | 0.000002A | SPI | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE/SOFTWARE | 750μm | 3.1mm | 2.1mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CAT34C02HU3I-GT4 | ON Semiconductor | 数据表 | 7520 In Stock | - | 最小起订量: 1 最小包装量: 1 | Gold | 表面贴装 | 表面贴装 | 8-UFDFN Exposed Pad | 8 | Non-Volatile | Industrial grade | -40°C~85°C TA | Tape & Reel (TR) | 2010 | e4 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 100 YEAR DATA RETENTION | 1.7V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | CAT34C02 | 8 | 5V | 1.7V | 2-Wire, I2C, Serial | 2Kb 256 x 8 | 2mA | 400kHz | 900ns | EEPROM | I2C | 16X16 | 无卤素 | 5ms | 2 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE/SOFTWARE | 1010DDDR | 500μm | 3.1mm | 2.1mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 70V25L25PFGI | Renesas Electronics America Inc. | 数据表 | 12800 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 100-LQFP | 100-TQFP (14x14) | Volatile | Industrial grade | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 3V~3.6V | IDT70V25 | 128Kb 8K x 16 | 25ns | SRAM | Parallel | 25ns | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 25AA080DT-I/MNY | Microchip Technology | 数据表 | 1260 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 25AA080D | 8 | 不合格 | 5V | SPI, Serial | 8Kb 1K x 8 | 5mA | SYNCHRONOUS | 10MHz | 160 ns | EEPROM | SPI | 8 | 5ms | 8 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 3mm | 2mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1420JV18-300BZXC | Cypress Semiconductor Corp | 数据表 | 285 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | Obsolete | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 1 | 1.8V | unknown | CY7C1420 | 165 | 不合格 | 1.8V | 36Mb 1M x 36 | 1 | 1.01A | 300MHz | 450 ps | SRAM | Parallel | 3-STATE | 36 | 20b | 36 Mb | 0.4A | COMMON | Synchronous | 36b | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M87C257-15C6 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 32-LCC (J-Lead) | 32 | Non-Volatile | -40°C~85°C TA | Tube | e3 | Obsolete | 3 (168 Hours) | 32 | EAR99 | Matte Tin (Sn) | 4.5V~5.5V | QUAD | 245 | 1 | 5V | 1.27mm | 40 | M87C257 | 32 | 5V | 5V | 256Kb 32K x 8 | 30mA | 150ns | EPROM | Parallel | 3-STATE | 8 | 256 kb | 0.0001A | COMMON | 3.56mm | 13.97mm | 11.43mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | R1LV0416DSB-5SI#B0 | Renesas | 数据表 | 940 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 44 | 256000 | Compliant | RAM, SRAM | 85 °C | -40 °C | 3 V | 3 V | Parallel | 3.6 V | 2.7 V | 512 kB | 1 | 20 mA | 55 ns | 18 b | 4 Mb | Asynchronous | 16 b | 无 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CAT93C66V-TE13 | onsemi | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | onsemi | Bulk | Non-Volatile | Obsolete | CAT93C66 | 0°C ~ 70°C (TA) | - | 2.5V ~ 6V | 4Kbit | 2 MHz | 500 ns | EEPROM | Microwire | - | 256 x 16, 512 x 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NV25020DWHFT3G | ON Semiconductor | 数据表 | 33000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 4 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | Automotive grade | -40°C~150°C TA | Tape & Reel (TR) | Automotive, AEC-Q100 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.5V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | R-PDSO-G8 | 5.5V | 2.5V | 2Kb 256 x 8 | SYNCHRONOUS | 10MHz | 40ns | EEPROM | SPI | 256X8 | 8 | 4ms | 2048 bit | SERIAL | SPI | 4ms | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93C56CT-E/MNY | Microchip Technology | 数据表 | 17 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2011 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 93C56C | 8 | 5V | Serial | 2Kb 256 x 8 128 x 16 | 2mA | SYNCHRONOUS | 3MHz | 200 ns | EEPROM | SPI | 16 | 2ms | 2 kb | MICROWIRE | 2ms | 8 | 3mm | 2mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M93C46-WBN6 | STMicroelectronics | 数据表 | 14912 In Stock | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | e0 | Obsolete | 3 (168 Hours) | 8 | EAR99 | Tin/Lead (Sn/Pb) | 2.5V~5.5V | DUAL | 1 | 5V | 2.54mm | M93C46 | 8 | 5.5V | 3/5V | 2.5V | Serial | 1Kb 128 x 8 64 x 16 | 2mA | 2MHz | 200 ns | EEPROM | SPI | 64X16 | 3-STATE | 5ms | 1 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 40 | SOFTWARE | 3.3mm | 9.27mm | 6.35mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71256SA20TP | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 28-DIP (0.300, 7.62mm) | 28-PDIP | Volatile | 0°C~70°C TA | Tube | Obsolete | 1 (Unlimited) | 4.5V~5.5V | IDT71256 | 256Kb 32K x 8 | 20ns | SRAM | Parallel | 20ns | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S25FL128P0XMFI013 | Cypress Semiconductor Corp | 数据表 | 10 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | 2015 | FL-P | e3 | Obsolete | 3 (168 Hours) | 16 | 3A991.B.1.A | Matte Tin (Sn) | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 128Mb 16M x 8 | 22mA | 104MHz | 8 ns | FLASH | SPI | 8b | 8 | 3ms | 1b | 128 Mb | 0.00002A | Synchronous | 1b | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256B | 2.65mm | 10.3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | W25Q16DVZPIG | Winbond Electronics | 数据表 | 9 In Stock | - | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tube | 2012 | SpiFlash® | Discontinued | 3 (168 Hours) | 8 | 3A991.B.1.A | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | R-PDSO-N8 | 不合格 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 16Mb 2M x 8 | 18mA | 104MHz | 7 ns | FLASH | SPI - Quad I/O | 2MX8 | 8 | 50μs, 3ms | 24b | 16 Mb | 0.000005A | Synchronous | 8b | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 0.8mm | 6mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93C76CT-E/MNY | Microchip Technology | 数据表 | 14 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2012 | e4 | 活跃 | 1 (Unlimited) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | DUAL | 5V | 0.5mm | 93C76C | 不合格 | 5V | 5V | Serial | 8Kb 1K x 8 512 x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 512X16 | 16 | 2ms | 8 kb | 0.000003A | MICROWIRE | 1000000 Write/Erase Cycles | 200 | HARDWARE/SOFTWARE | 8 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1470BV33-200AXC | Cypress Semiconductor Corp | 数据表 | 400 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2004 | NoBL™ | e3 | 活跃 | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | 流水线结构 | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 40 | CY7C1470 | 100 | 3.3V | 3.6V | 3.135V | 72Mb 2M x 36 | 4 | 500mA | 200MHz | 3ns | SRAM | Parallel | 2MX36 | 3-STATE | 36 | 21b | 72 Mb | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IS42S32800D-6BL | ISSI, Integrated Silicon Solution Inc | 数据表 | 60 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 90-TFBGA | 90 | Volatile | 0°C~70°C TA | Tray | e1 | yes | Obsolete | 2 (1 Year) | 90 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.24 | 3V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.8mm | 40 | 90 | 3.3V | 3.6V | 3V | 256Mb 8M x 32 | 1 | 180mA | 166MHz | 5.4ns | DRAM | Parallel | 32b | 8MX32 | 32 | 13b | 256 Mb | 0.003A | COMMON | 4096 | 1248FP | 1248 | 1.2mm | 13mm | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST25VF010A-33-4C-QAE | Microchip Technology | 数据表 | 33000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 1 Weeks | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | Non-Volatile | 0°C~70°C TA | Tube | 2014 | SST25 | e3 | yes | 活跃 | 3 (168 Hours) | 8 | 3A991.B.1.A | Matte Tin (Sn) | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | SST25VF010A | 8 | 3.3V | 3.6V | 2.7V | SPI, Serial | 1Mb 128K x 8 | 10mA | 33MHz | 12 ns | FLASH | SPI | 8b | 1MX1 | 1 | 20μs | 1b | 1 Mb | 0.000015A | Synchronous | 8b | 2.7V | SPI | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 6mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IS61LF6436A-8.5TQLI | ISSI, Integrated Silicon Solution Inc | 数据表 | 7 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 100-LQFP | YES | 100 | 657.000198mg | Volatile | -40°C~85°C TA | Tray | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | FLOW-THROUGH ARCHITECTURE | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 40 | 100 | 3.3V | 3.63V | 2Mb 64K x 36 | 1 | 150mA | 150mA | 90MHz | 8.5ns | SRAM | Parallel | 64KX36 | 3-STATE | 36 | 16b | 2.3 Mb | 0.035A | COMMON | Synchronous | 36b | 20mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C09289V-12AC | Cypress Semiconductor Corp | 数据表 | 8 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2001 | e0 | Obsolete | 3 (168 Hours) | 100 | Tin/Lead (Sn/Pb) | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3V~3.6V | QUAD | 240 | 1 | 3.3V | 0.5mm | 30 | CY7C09289 | 100 | 3.3V | 3.6V | 3V | 1Mb 64K x 16 | 2 | 180mA | 50MHz | 12ns | SRAM | Parallel | 64KX16 | 3-STATE | 16 | 16b | 1 Mb | COMMON | Synchronous | 16b | 3V | YES | 1.6mm | 14mm | 无 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93C56BT-I/ST | Microchip Technology | 数据表 | 12500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C56B | 8 | 5V | 5V | Serial | 2Kb 128 x 16 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 16 | 2ms | 2 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | SOFTWARE | 8 | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 |
25LC080AT-E/ST
Microchip Technology
分类:Memory
25LC040AT-E/MNY
Microchip Technology
分类:Memory
GS81284Z36B-200IV
GSI Technology
分类:Memory
GS82582QT19GE-333I
GSI Technology
分类:Memory
CAT25010VP2I-GT3
ON Semiconductor
分类:Memory
CAT34C02HU3I-GT4
ON Semiconductor
分类:Memory
70V25L25PFGI
Renesas Electronics America Inc.
分类:Memory
458.929240
25AA080DT-I/MNY
Microchip Technology
分类:Memory
CY7C1420JV18-300BZXC
Cypress Semiconductor Corp
分类:Memory
M87C257-15C6
STMicroelectronics
分类:Memory
R1LV0416DSB-5SI#B0
Renesas
分类:Memory
CAT93C66V-TE13
onsemi
分类:Memory
NV25020DWHFT3G
ON Semiconductor
分类:Memory
7.009110
93C56CT-E/MNY
Microchip Technology
分类:Memory
M93C46-WBN6
STMicroelectronics
分类:Memory
IDT71256SA20TP
Renesas Electronics America Inc.
分类:Memory
S25FL128P0XMFI013
Cypress Semiconductor Corp
分类:Memory
W25Q16DVZPIG
Winbond Electronics
分类:Memory
93C76CT-E/MNY
Microchip Technology
分类:Memory
CY7C1470BV33-200AXC
Cypress Semiconductor Corp
分类:Memory
IS42S32800D-6BL
ISSI, Integrated Silicon Solution Inc
分类:Memory
SST25VF010A-33-4C-QAE
Microchip Technology
分类:Memory
IS61LF6436A-8.5TQLI
ISSI, Integrated Silicon Solution Inc
分类:Memory
CY7C09289V-12AC
Cypress Semiconductor Corp
分类:Memory
93C56BT-I/ST
Microchip Technology
分类:Memory
