类别是'category.存储器' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 类型 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | uPs/uCs/外围ICs类型 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 建筑学 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 产品类别 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间(最大) | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 数据轮询 | 拨动位 | 定时器数量 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | I2C控制字节 | 反向引脚排列 | 产品类别 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
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CY14B256K-SP45XC | Cypress Semiconductor Corp | 数据表 | 34 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 48-BSSOP (0.295, 7.50mm Width) | 48 | Non-Volatile | 0°C~70°C TA | Tube | 2005 | e4 | Obsolete | 3 (168 Hours) | 48 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | 2.7V~3.45V | DUAL | 260 | 3V | 0.635mm | unknown | 20 | CY14*256 | 48 | 不合格 | 3.3V | 256Kb 32K x 8 | 50mA | TIMER, REAL TIME CLOCK | 0.032MHz | NVSRAM | Parallel | 8b | 45ns | 256 kb | 8b | 1 | 2.794mm | 15.875mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M93S46-WMN6 | STMicroelectronics | 数据表 | 5 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | e0 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 1 | 5V | 1.27mm | M93S46 | 8 | 不合格 | 5.5V | 3/5V | 2.5V | Serial | 1Kb 64 x 16 | 750μA | SYNCHRONOUS | 2MHz | 2 μs | EEPROM | SPI | 64X16 | 3-STATE | 16 | 5ms | 0.000005A | 1024 bit | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | N25Q128A11E1240E | Micron Technology Inc. | 数据表 | 9688 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 24-TBGA | YES | 24 | Non-Volatile | -40°C~85°C TA | Tray | 2014 | e1 | yes | Obsolete | 3 (168 Hours) | 24 | 锡银铜 | 1.7V~2V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | N25Q128 | 1.8V | 1.7V | SPI, Serial | 128Mb 32M x 4 | 20mA | 108MHz | 7 ns | FLASH | SPI | 128MX1 | 1 | 8ms, 5ms | 1b | 128 Mb | 0.00001A | Synchronous | 8b | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256B | 1.2mm | 8mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | W29EE011P90Z | Winbond Electronics | 数据表 | 2104 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 32-LCC (J-Lead) | 32 | Non-Volatile | 0°C~70°C TA | Tube | 2006 | yes | Obsolete | 3 (168 Hours) | 32 | EAR99 | 4.5V~5.5V | QUAD | 250 | 1 | 5V | 1.27mm | 90GHz | 40 | 32 | 5V | 5V | 1Mb 128K x 8 | 50mA | 90ns | FLASH | Parallel | 128KX8 | 8 | 10ms | 17b | 1 Mb | 0.0001A | Asynchronous | 8b | 5V | 1000 Write/Erase Cycles | 10ms | YES | YES | NO | 1K | 128 | 128B | 3.56mm | 13.97mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS43DR16320E-3DBLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | 7500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 84-TFBGA | YES | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 84 | AUTO/SELF REFRESH | 1.7V~1.9V | BOTTOM | 未说明 | 1 | 1.8V | 0.8mm | 未说明 | R-PBGA-B84 | 1.9V | 1.7V | 512Mb 32M x 16 | 1 | SYNCHRONOUS | 333MHz | 450ns | DRAM | Parallel | 32MX16 | 16 | 15ns | 536870912 bit | 1.2mm | 12.5mm | 8mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STK14C88-NF25I | Cypress Semiconductor Corp | 数据表 | 2900 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 32-SOIC (0.295, 7.50mm Width) | 32 | Non-Volatile | -40°C~85°C TA | Tube | 1996 | e3 | Obsolete | 3 (168 Hours) | 32 | EAR99 | Matte Tin (Sn) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | unknown | 20 | STK14C88 | 32 | 不合格 | 5V | 5V | 256Kb 32K x 8 | 100mA | ASYNCHRONOUS | NVSRAM | Parallel | 8b | 8 | 25ns | 256 kb | 0.0015A | 25 ns | 8b | 2.54mm | 20.726mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1021CV33-15ZXCT | Cypress Semiconductor Corp | 数据表 | 305 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | 44-TSOP II | Volatile | 0°C~70°C TA | Tape & Reel (TR) | 1996 | Obsolete | 3 (168 Hours) | 70°C | 0°C | 3V~3.6V | 15GHz | CY7C1021 | 3.3V | Parallel | 3.63V | 2.97V | 1Mb 64K x 16 | 1 | 80mA | 15ns | SRAM | Parallel | 15ns | 16b | 1 Mb | Asynchronous | 16b | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT25640A-10PU-2.7 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | 8-PDIP | Non-Volatile | -40°C~85°C TA | Tube | Obsolete | 1 (Unlimited) | 85°C | -40°C | 2.7V~5.5V | 20MHz | AT25640 | 5V | SPI, Serial | 5.5V | 2.7V | 64Kb 8K x 8 | 10mA | 20MHz | 40 ns | EEPROM | SPI | 5ms | 64 kb | 10MHz | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S25FL129P0XBHI310 | Cypress Semiconductor Corp | 数据表 | 37 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 24-TBGA | YES | 24 | Non-Volatile | -40°C~85°C TA | Tray | 2007 | FL-P | Obsolete | 3 (168 Hours) | 24 | 3A991.B.1.A | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 不合格 | 3.3V | 3/3.3V | 2.7V | SPI, Serial | 128Mb 16M x 8 | SYNCHRONOUS | 104MHz | 0.038mA | FLASH | SPI - Quad I/O | 16MX8 | 8 | 5μs, 3ms | 0.00001A | 134217728 bit | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1.2mm | 8mm | 6mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
W25Q80EWSVIG | Winbond Electronics | 数据表 | 100 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | 2016 | SpiFlash® | 活跃 | 3 (168 Hours) | 8 | 1.65V~1.95V | DUAL | 1 | 1.8V | 1.27mm | R-PDSO-G8 | 不合格 | 1.95V | 1.8V | 1.65V | SPI, Serial | 8Mb 1M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI | 8MX1 | 1 | 800μs | 0.0000075A | 8388608 bit | 1.8V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 0.9mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 25AA320AXT-I/ST | Microchip Technology | 数据表 | 9 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) - annealed | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 25AA320A | 8 | 5V | SPI, Serial | 32Kb 4K x 8 | 5mA | 10MHz | 160 ns | EEPROM | SPI | 8 | 5ms | 32 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT28C256E-20FM/883 | Microchip Technology | 数据表 | 2859 In Stock | - | 最小起订量: 1 最小包装量: 1 | 23 Weeks | Lead, Tin | 表面贴装 | 表面贴装 | 28-CFlatPack | 28 | Non-Volatile | Military grade | -55°C~125°C TC | Tube | 1997 | e0 | no | 活跃 | 3 (168 Hours) | 28 | 锡铅 | 自动写入 | 4.5V~5.5V | DUAL | 240 | 1 | 5V | 1.27mm | 200GHz | 30 | AT28C256 | 不合格 | 5V | 5V | Parallel, SPI | 256Kb 32K x 8 | 50mA | ASYNCHRONOUS | 200ns | EEPROM | Parallel | 32KX8 | 3-STATE | 8 | 10ms | 256 kb | 0.0003A | MIL-STD-883 Class C | 5V | 100000 Write/Erase Cycles | 10ms | YES | YES | 64words | 3.02mm | 10.16mm | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1570KV18-450BZXI | Cypress Semiconductor Corp | 数据表 | 2590 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e1 | Obsolete | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 30 | CY7C1570 | 165 | 1.8V | 72Mb 2M x 36 | 1 | 820mA | 450MHz | 450 ps | SRAM | Parallel | 2MX36 | 3-STATE | 36 | 20b | 72 Mb | 0.34A | COMMON | Synchronous | 36b | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CAT25160VI-G | ON Semiconductor | 数据表 | 10 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 20 Weeks | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | Industrial grade | -40°C~85°C TA | Tube | 2008 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 100 YEAR DATA RETENTION | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 8 | 5.5V | 2/5V | 2.5V | SPI, Serial | 16Kb 2K x 8 | 2mA | 20MHz | 40 ns | EEPROM | SPI | 8 | 5ms | 16 kb | 0.000002A | SPI | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BR24G08FV-3GTE2 | ROHM Semiconductor | 数据表 | 1500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | Tin | 表面贴装 | 表面贴装 | 8-LSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | 活跃 | 1 (Unlimited) | 8 | 1.6V~5.5V | DUAL | 未说明 | 1 | 2.5V | 0.65mm | 未说明 | BR24G08 | 5.5V | 1.6V | 2-Wire, I2C, Serial | 8Kb 1K x 8 | SYNCHRONOUS | 400kHz | 900 ns | EEPROM | I2C | 1 | 5ms | 8 kb | I2C | 5ms | 1.1mm | 4.4mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BR24A08F-WME2 | ROHM Semiconductor | 数据表 | 2233 In Stock | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | Automotive grade | -40°C~105°C TA | Cut Tape (CT) | 2013 | Automotive, AEC-Q100 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 未说明 | 1 | 1.27mm | 未说明 | 8 | 不合格 | 5.5V | 3/5V | 2.5V | 8Kb 1K x 8 | SYNCHRONOUS | 400kHz | EEPROM | I2C | 8 | 5ms | 0.000002A | 4096 bit | SERIAL | I2C | 100000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DMMR | 5mm | 4.4mm | Unknown | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST26VF032BT-104V/MF | Microchip Technology | 数据表 | 14 In Stock | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 8-WDFN Exposed Pad | 8 | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | 2016 | SST26 SQI® | e3 | 活跃 | 3 (168 Hours) | Matte Tin (Sn) - annealed | 2.7V~3.6V | SST26VF032 | SPI, Serial | 32Mb 4M x 8 | 104MHz | FLASH | SPI - Quad I/O | 1.5ms | 32 Mb | SPI | HARDWARE/SOFTWARE | 256B | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IS64WV25616EDBLL-10BLA3 | ISSI, Integrated Silicon Solution Inc | 数据表 | 214 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 48-TFBGA | YES | 48 | Volatile | Automotive grade | -40°C~125°C TA | Tray | 活跃 | 3 (168 Hours) | 48 | 2.4V~3.6V | BOTTOM | 1 | 3V | 0.75mm | 48 | 3.6V | 2.5/3.3V | 2.4V | 4Mb 256K x 16 | 1 | SRAM | Parallel | 3-STATE | 16 | 10ns | 18b | 4 Mb | COMMON | 2V | 8mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT49F008AT-12TC | Microchip Technology | 数据表 | 68 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 40-TFSOP (0.724, 18.40mm Width) | 40 | 40-TSOP | Non-Volatile | 0°C~70°C TC | Tray | 1997 | Obsolete | 3 (168 Hours) | 70°C | 0°C | 4.5V~5.5V | 120GHz | AT49F008 | Parallel | 5.5V | 4.5V | 8Mb 1M x 8 512K x 16 | 120ns | FLASH | Parallel | 8b | 50μs | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY15B016Q-SXET | Cypress Semiconductor Corp | 数据表 | 5000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | Automotive grade | -40°C~125°C TA | Tape & Reel (TR) | Automotive, AEC-Q100, F-RAM™ | 活跃 | 3 (168 Hours) | 8 | EAR99 | 8542.32.00.71 | 2.7V~3.65V | DUAL | 未说明 | 1 | 3.3V | 1.27mm | 未说明 | R-PDSO-G8 | 3.6V | 3V | 16Kb 2K x 8 | SYNCHRONOUS | 16MHz | FRAM | SPI | 2KX8 | 8 | 16384 bit | 1.727mm | 4.889mm | 3.8985mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AS7C1024B-15TJCNTR | Alliance Memory, Inc. | 数据表 | 42 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 32-TFSOP (0.724, 18.40mm Width) | YES | 32 | Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2002 | e3/e6 | yes | 活跃 | 3 (168 Hours) | 32 | PURE MATTE TIN/TIN BISMUTH | 4.5V~5.5V | DUAL | 245 | 1 | 5V | 1.27mm | 40 | 32 | 5.5V | 4.5V | 1Mb 128K x 8 | SRAM | Parallel | 128KX8 | 8 | 15ns | 1048576 bit | 15 ns | 3.683mm | 20.995mm | 7.62mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AS6C62256A-70SIN | Alliance Memory, Inc. | 数据表 | 23 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 28-SOIC (0.330, 8.38mm Width) | YES | 28 | Volatile | -40°C~85°C TA | Tube | 2009 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 40 | 28 | 不合格 | 5V | 5V | 256Kb 32K x 8 | 1 | 0.07mA | SRAM | Parallel | 32KX8 | 3-STATE | 8 | 70ns | 15b | 256 kb | 0.000006A | 14MHz | 70 ns | COMMON | 2V | YES | 3.048mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1049B-20VC | Cypress Semiconductor Corp | 数据表 | 40 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 36-BSOJ (0.400, 10.16mm Width) | YES | 36 | Volatile | 0°C~70°C TA | Tube | 2000 | e0 | no | Obsolete | 3 (168 Hours) | 36 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | 4.5V~5.5V | DUAL | 225 | 1 | 5V | 1.27mm | not_compliant | 20GHz | 30 | CY7C1049 | 36 | 不合格 | 5.5V | 5V | 4.5V | 4Mb 512K x 8 | SRAM | Parallel | 512KX8 | 3-STATE | 8 | 20ns | 0.008A | 4194304 bit | 20 ns | COMMON | 4.5V | 3.683mm | 23.495mm | 10.16mm | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8321E36AGD-150 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | BGA-165 | YES | 165 | 133@Flow-Through/150@Pipelined MHz | FBGA | SDR | 2.5, 3.3 V | 2.3, 3 V | Synchronous | 1 MWords | 36 Bit | 2.7, 3.6 V | 表面贴装 | 有 | 150 MHz | + 70 C | 3.6 V | 0 C | 18 | 2.3 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SyncBurst | Details | SDR | LBGA, BGA165,11X15,40 | GRID ARRAY, LOW PROFILE | 3 | 1000000 | PLASTIC/EPOXY | BGA165,11X15,40 | 未说明 | 7.5 ns | 85 °C | 有 | GS8321E36AGD-150 | 150 MHz | 2.5 V | LBGA | RECTANGULAR | 活跃 | GSI TECHNOLOGY | 5.31 | BGA | Commercial grade | 0 to 85 °C | Tray | GS8321E36AGD | e1 | 有 | 3A991.B.2.B | DCD Pipeline/Flow Through | 锡银铜 | IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | 不合格 | 2.7 V | 2.5/3.3 V | OTHER | 2.3 V | 36 Mbit | 4 | SYNCHRONOUS | 190 mA, 200 mA | 7.5 ns | Flow-Through/Pipelined | 1 M x 36 | 3-STATE | 1.4 mm | 36 | 20 Bit | SRAM | 36 Mbit | 0.03 A | 37748736 bit | Commercial | PARALLEL | COMMON | 缓存SRAM | 2.3 V | SRAM | 15 mm | 13 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8161E36DD-250V | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | + 70 C | 2.7 V | 0 C | 18 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SyncBurst | SDR | Commercial grade | 181.8@Flow-Through/250@Pipelined MHz | FBGA | SDR | 1.8, 2.5 V | 1.7, 2.3 V | Synchronous | 512 kWords | 36 Bit | 2, 2.7 V | 表面贴装 | 有 | 250 MHz | 0 to 70 °C | Tray | GS8161E36DD | DCD Pipeline/Flow Through | Memory & Data Storage | 165 | 18 Mbit | 4 | 225 mA, 245 mA | 5.5 ns | Flow-Through/Pipelined | 512 k x 36 | 19 Bit | SRAM | 18 Mbit | Commercial | SRAM |
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