类别是'category.存储器' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 类型 | 端子表面处理 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 电压 | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 建筑学 | 数据总线宽度 | 组织结构 | 输出特性 | 无卤素 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 产品类别 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间(最大) | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | 顺序突发长度 | 交错突发长度 | 产品类别 | 组织的记忆 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | RoHS状态 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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S29GL01GS12DHVV10 | Cypress Semiconductor Corp | 数据表 | 900 In Stock | - | 最小起订量: 1 最小包装量: 1 | 13 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~105°C TA | Tray | 2007 | GL-S | 活跃 | 3 (168 Hours) | 64 | 8542.32.00.51 | 1.65V~3.6V | BOTTOM | 1 | 3V | 1mm | 不合格 | 3.6V | 1.8/3.33/3.3V | 2.7V | 1Gb 64M x 16 | ASYNCHRONOUS | 0.08mA | 120ns | FLASH | Parallel | 16 | 60ns | 26b | 1 Gb | 0.0002A | 3V | YES | YES | YES | 1K | 64K | 32B | YES | BOTTOM/TOP | YES | 1.4mm | 9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IS45S32200E-7TLA1 | ISSI, Integrated Silicon Solution Inc | 数据表 | 2058 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 86-TFSOP (0.400, 10.16mm Width) | 86 | Volatile | -40°C~85°C TA | Tray | e3 | yes | Obsolete | 2 (1 Year) | 86 | EAR99 | Matte Tin (Sn) - annealed | AUTO/SELF REFRESH | 8542.32.00.02 | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.5mm | 40 | 86 | 不合格 | 3.3V | 3.6V | 3V | 64Mb 2M x 32 | 1 | 140mA | SYNCHRONOUS | 143MHz | 5.5ns | DRAM | Parallel | 32b | 2MX32 | 3-STATE | 32 | 13b | 64 Mb | 0.002A | COMMON | 4096 | 1248FP | 1248 | 1.2mm | 22.22mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M29F160FT55N3E2 | Micron Technology Inc. | 数据表 | 180 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | 48 | Automotive grade | Non-Volatile | -40°C~125°C TA | Tray | 2014 | e3 | yes | Obsolete | 3 (168 Hours) | 48 | EAR99 | 哑光锡 | TOP BOOT BLOCK | 8542.32.00.51 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 30 | M29F160 | 48 | 5V | 5V | 4.5V | 16Mb 2M x 8 1M x 16 | 20mA | FLASH | Parallel | 1MX16 | 16 | 55ns | 16 Mb | 0.00012A | AEC-Q100 | 55 ns | Asynchronous | 8 | YES | YES | YES | 12131 | 16K8K32K64K | YES | TOP | YES | 1.2mm | 18.4mm | 12mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BR93G66NUX-3BTTR | Rohm Semiconductor | 数据表 | 50 In Stock | - | 最小起订量: 1 最小包装量: 1 | Production (Last Updated: 2 years ago) | 表面贴装 | 8-UFDFN Exposed Pad | YES | VSON008X2030 | 8 | ROHM 半导体 | ROHM 半导体 | Details | Rohm Semiconductor | HVSON, | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 256 | PLASTIC/EPOXY | -40 °C | 未说明 | 85 °C | 有 | BR93G66NUX-3BTTR | 3 MHz | 256 words | 5 V | HVSON | RECTANGULAR | 活跃 | ROHM CO LTD | 2.28 | 活跃 | Non-Volatile | BR93G66 | 3 MHz | + 85 C | 5.5 V | - 40 C | 4000 | 3 mA | 1.7 V | SMD/SMT | 3-Wire | 40 Year | BR93G66NUX-3B | -40°C ~ 105°C (TA) | MouseReel | ALSO AVAILABLE 2.5V OPERATES WITH 2MHZ AND 1.7V OPERATES WITH 1MHZ, SEATED HT-CALCULATED | Memory & Data Storage | 1.7V ~ 5.5V | DUAL | 无铅 | 未说明 | 1 | 0.5 mm | compliant | R-PDSO-N8 | 1.7 V to 5.5 V | 5.5 V | INDUSTRIAL | 4.5 V | 4Kbit | SYNCHRONOUS | 3 MHz | 3 mA | EEPROM | Microwire | 256 x 16 | 0.6 mm | 16 | 5ms | EEPROM | 4 kb | 4096 bit | SERIAL | EEPROM | 3-WIRE | 5 ms | EEPROM | 256 x 16 | 3 mm | 2 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 25LC010A-H/SN | Microchip Technology | 数据表 | 10000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~150°C TA | Tube | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 25LC010A | 8 | 5V | SPI, Serial | 1Kb 128 x 8 | 5mA | 10MHz | 160 ns | EEPROM | SPI | 8 | 5ms | 1 kb | SPI | 6ms | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S25FL064LABMFV000 | Cypress Semiconductor Corp | 数据表 | 76 In Stock | - | 最小起订量: 1 最小包装量: 1 | 13 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tray | FL-L | 活跃 | 3 (168 Hours) | 16 | IT IS ALSO CONFIGURED AS 64M X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-G16 | 3.6V | 2.7V | 64Mb 8M x 8 | SYNCHRONOUS | 108MHz | FLASH | SPI - Quad I/O, QPI | 16MX4 | 4 | 67108864 bit | SERIAL | 3V | 2 | 2.65mm | 10.3mm | 7.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8662TT37BGD-400 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | BGA-165 | YES | 165 | DDR | 1.8000 V | 1.7 V | Synchronous | 2 MWords | 36 Bit | 1.9 V | 表面贴装 | 有 | 400 MHz | + 70 C | 1.9 V | 0 C | 15 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaDDR-II+ | Details | DDR | LBGA, BGA165,11X15,40 | GRID ARRAY, LOW PROFILE | 3 | 2000000 | PLASTIC/EPOXY | BGA165,11X15,40 | 未说明 | 0.45 ns | 70 °C | 有 | GS8662TT37BGD-400 | 400 MHz | 1.8 V | LBGA | RECTANGULAR | 活跃 | GSI TECHNOLOGY | 5.22 | BGA | Commercial grade | 400 MHz | FBGA | 0 to 85 °C | Tray | GS8662TT37BGD | e1 | 有 | 3A991.B.2.B | SigmaDDR-II+ B2 | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE, LATE WRITE | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | 不合格 | 1.9 V | 1.5/1.8,1.8 V | COMMERCIAL | 1.7 V | 72 Mbit | 1 | SYNCHRONOUS | 800 mA | Pipelined | 2 M x 36 | 3-STATE | 1.4 mm | 36 | 20 Bit | SRAM | 72 Mbit | 0.245 A | 75497472 bit | Commercial | PARALLEL | COMMON | DDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302TT07E-333I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | Parallel | GSI技术 | GSI技术 | SigmaDDR-II+ | DDR-II | Industrial grade | 333 MHz | FBGA | DDR | 1.8000 V | 1.7 V | Synchronous | 16 MWords | 8 Bit | 1.9 V | 表面贴装 | 有 | 333 MHz | + 85 C | 1.9 V | - 40 C | 10 | 1.7 V | SMD/SMT | -40 to 100 °C | Tray | GS81302TT07E | SigmaDDR-II+ B2 | Memory & Data Storage | 165 | 144 Mbit | 1 | 765 mA | Pipelined | 16 M x 8 | 23 Bit | SRAM | 144 Mbit | Industrial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8322Z72GC-200 | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-209 | SMD/SMT | Parallel | GSI技术 | GSI技术 | NBT SRAM | Details | SDR | Commercial grade | 133.3@Flow-Through/200@Pipelined MHz | FBGA | SDR | 2.5, 3.3 V | 2.3, 3 V | Synchronous | 512 kWords | 72 Bit | 2.7, 3.6 V | 表面贴装 | 有 | 200 MHz | + 70 C | 3.6 V | 0 C | 14 | 2.3 V | 0 to 70 °C | Tray | GS8322Z72GC | NBT Pipeline/Flow Through | Memory & Data Storage | 209 | 36 Mbit | 8 | 235 mA, 320 mA | 7.5 ns | Flow-Through/Pipelined | 512 k x 72 | 19 Bit | SRAM | 36 Mbit | Commercial | SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 5962-8687501XA | Renesas Electronics America Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 48-DIP (0.600", 15.24mm) | 48-SIDE BRAZED | Renesas Electronics America Inc | Parallel | Renesas Electronics | Renesas Electronics | N | Tube | 5962-8687501 | Volatile | 最后一次购买 | This product may require additional documentation to export from the United States. | + 125 C | 5.5 V | - 55 C | 8 | 4.5 V | -55°C ~ 125°C (TA) | Tube | - | Asynchronous | Memory & Data Storage | 4.5V ~ 5.5V | 8Kbit | 65 mA | 90 ns | SRAM | Parallel | 1 k x 8 | 90ns | SRAM | SRAM | 1K x 8 | 3.3 mm | 61.72 mm | 15.24 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | W29GL128CH9C | Winbond Electronics | 数据表 | 192 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 表面贴装 | 56-TFBGA | YES | Non-Volatile | -40°C~85°C TA | Tube | 2016 | Obsolete | 3 (168 Hours) | 56 | 2.7V~3.6V | BOTTOM | 1 | 3V | 0.8mm | R-PBGA-B56 | 不合格 | 3.6V | 1.8/3.33/3.3V | 2.7V | 128Mb 16M x 8 8M x 16 | ASYNCHRONOUS | FLASH | Parallel | 8MX16 | 16 | 90ns | 0.000005A | 134217728 bit | 90 ns | 3V | 8 | YES | YES | YES | 128 | 128K | 8/16words | YES | YES | 1.2mm | 9mm | 7mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S34ML02G200TFI003 | Cypress Semiconductor Corp | 数据表 | 740 In Stock | - | 最小起订量: 1 最小包装量: 1 | 22 Weeks | Tin | 表面贴装 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2016 | ML-2 | e3 | Discontinued | 3 (168 Hours) | 48 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3.3V | 0.5mm | 未说明 | 不合格 | 3V | 3.6V | 2.7V | 2Gb 256M x 8 | ASYNCHRONOUS | 0.03mA | FLASH | Parallel | 256MX8 | 8 | 25ns | 29b | 2 Gb | 0.00005A | 25 ns | 3V | NO | NO | YES | 2K | 128K | 2kB | YES | 1.2mm | 18.4mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1041CV33-12BAXE | Cypress Semiconductor Corp | 数据表 | 1795 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Volatile | -40°C~125°C TA | Tray | 1996 | e1 | Discontinued | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 3V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.75mm | 40 | CY7C1041 | 48 | 3.3V | 3.6V | 3V | 4Mb 256K x 16 | 1 | 120mA | SRAM | Parallel | 3-STATE | 16 | 12ns | 18b | 4 Mb | COMMON | Asynchronous | 16b | 8.5mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S29GL128P90TFCR13 | Cypress Semiconductor Corp | 数据表 | 5000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 28 Weeks | 表面贴装 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | 56 | Non-Volatile | 0°C~85°C TA | Tape & Reel (TR) | 2017 | GL-P | e3 | Obsolete | 3 (168 Hours) | 56 | 3A991.B.1.A | Matte Tin (Sn) | 8542.32.00.51 | 3V~3.6V | DUAL | 1 | 3.3V | 0.5mm | 3.3V | 3.6V | 3V | 128Mb 16M x 8 | 110mA | FLASH | Parallel | 8b | 128MX1 | 1 | 90ns | 128 Mb | 0.000005A | 90 ns | Asynchronous | 3V | 8 | YES | YES | YES | 128 | 128K | 8/16words | YES | YES | 1.2mm | 18.4mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8662D18BGD-250I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | BGA-165 | YES | 165 | FBGA | QDR | 1.8000 V | 1.7 V | Synchronous | 4 MWords | 18 Bit | 1.9 V | 表面贴装 | 有 | 250 MHz | + 85 C | 1.9 V | - 40 C | 15 | 1.7 V | SMD/SMT | Parallel | GSI技术 | GSI技术 | SigmaQuad-II | Details | DDR | LBGA, BGA165,11X15,40 | GRID ARRAY, LOW PROFILE | 3 | 4000000 | PLASTIC/EPOXY | BGA165,11X15,40 | -40 °C | 未说明 | 0.45 ns | 85 °C | 有 | GS8662D18BGD-250I | 250 MHz | 1.8 V | LBGA | RECTANGULAR | 活跃 | GSI TECHNOLOGY | 5.21 | BGA | Industrial grade | 250 MHz | -40 to 100 °C | Tray | GS8662D18BGD | e1 | 有 | 3A991.B.2.B | SigmaQuad-II | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 8542.32.00.41 | Memory & Data Storage | CMOS | BOTTOM | BALL | 260 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | 不合格 | 1.9 V | 1.5/1.8,1.8 V | INDUSTRIAL | 1.7 V | 72 Mbit | 2 | SYNCHRONOUS | 510 mA | Pipelined | 4 M x 18 | 3-STATE | 1.4 mm | 18 | 20 Bit | SRAM | 72 Mbit | 75497472 bit | Industrial | PARALLEL | SEPARATE | QDR SRAM | 1.7 V | SRAM | 15 mm | 13 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS81302D10GE-400I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA-165 | 400 MHz | FBGA | QDR | 1.8000 V | 1.7 V | Synchronous | 16 MWords | 9 Bit | 1.9 V | 表面贴装 | 400 MHz | + 85 C | 1.9 V | - 40 C | 1.7 V | SMD/SMT | Parallel | Industrial grade | -40 to 100 °C | GS81302D10GE | 165 | 144 Mbit | 2 | 1.065 A | Pipelined | 16 M x 9 | 22 Bit | 144 Mbit | Industrial | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8161Z32DD-375I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | YES | 165 | 4.2 ns | 85 °C | 无 | GS8161Z32DD-375I | 2.5 V | LBGA | RECTANGULAR | GSI技术 | 活跃 | GSI TECHNOLOGY | 5.3 | BGA | Industrial grade | 238@Flow-Through/375@Pipelined MHz | FBGA | SDR | 2.5, 3.3 V | 2.3, 3 V | Synchronous | 512 kWords | 32 Bit | 2.7, 3.6 V | 表面贴装 | LBGA, | GRID ARRAY, LOW PROFILE | 512000 | PLASTIC/EPOXY | -40 °C | 未说明 | -40 to 85 °C | 3A991.B.2.B | FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 8542.32.00.41 | CMOS | BOTTOM | BALL | 未说明 | 1 | 1 mm | compliant | 165 | R-PBGA-B165 | 2.7 V | INDUSTRIAL | 2.3 V | 4 | SYNCHRONOUS | Flow-Through/Pipelined | 512KX32 | 1.4 mm | 32 | 19 Bit | 18 Mbit | 16777216 bit | Industrial | PARALLEL | ZBT SRAM | 15 mm | 13 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IS42S16800F-6BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | 1044 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 54-TFBGA | 54 | Volatile | Industrial grade | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 54 | EAR99 | AUTO/SELF REFRESH | 3V~3.6V | BOTTOM | 1 | 3.3V | 0.8mm | 54 | 不合格 | 3.3V | 3.6V | 3V | 128Mb 8M x 16 | 1 | 120mA | SYNCHRONOUS | 166MHz | 5.4ns | DRAM | Parallel | 16b | 8MX16 | 3-STATE | 16 | 14b | 128 Mb | 0.002A | COMMON | 4096 | 1248FP | 1248 | 1.2mm | 8mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BR93H56RF-WCE2 | ROHM Semiconductor | 数据表 | 39 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | YES | Automotive grade | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | 2013 | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | 2.7V~5.5V | DUAL | 未说明 | 1 | 4V | 1.27mm | 未说明 | R-PDSO-G8 | 不合格 | 5.5V | 2/5V | 2.7V | 2Kb 128 x 16 | SYNCHRONOUS | 1.25MHz | EEPROM | SPI | 128X16 | 16 | 5ms | 0.000002A | 2048 bit | SERIAL | 3-WIRE | 1000000 Write/Erase Cycles | 10ms | 40 | SOFTWARE | 1.71mm | 5mm | 4.4mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT25XE041B-XMHN-T | Adesto Technologies | 数据表 | 25 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TC | Cut Tape (CT) | 2013 | yes | 活跃 | 1 (Unlimited) | 8 | 1.65V~3.6V | DUAL | 1 | 1.8V | 0.65mm | 3.6V | 1.65V | SPI, Serial | 4Mb 512K x 8 | SYNCHRONOUS | 85MHz | 7.5 ns | FLASH | SPI | 4MX1 | 1 | 8μs, 2.75ms | 32 Mb | 256B | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT28C010-15TU-T | Microchip Technology | 数据表 | 20 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 32-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 1997 | 活跃 | 3 (168 Hours) | 32 | 4.5V~5.5V | DUAL | 1 | 5V | 0.5mm | R-PDSO-G32 | 5.5V | 4.5V | 1Mb 128K x 8 | ASYNCHRONOUS | 150ns | EEPROM | Parallel | 128KX8 | 8 | 10ms | 1048576 bit | 5V | 10ms | 1.2mm | 18.4mm | 8mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | W25Q128JVBIM | Winbond Electronics | 数据表 | 739 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 24-TBGA | YES | Non-Volatile | -40°C~85°C TA | Tray | SpiFlash® | yes | 活跃 | 3 (168 Hours) | 24 | IT ALSO OPERATES AT 104 MHZ CLOCK FREQUENCY AT 2.7 TO 3.0 V SUPPLY VOLTAGE | 2.7V~3.6V | BOTTOM | 未说明 | 1 | 3.3V | 1mm | 未说明 | R-PBGA-B24 | 3.6V | 3V | 128Mb 16M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O, QPI, DTR | 16MX8 | 8 | 3ms | 134217728 bit | SERIAL | 3V | 1 | 1.2mm | 8mm | 6mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IS42S16800F-7BLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | 1500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 54-TFBGA | YES | 54 | Volatile | Industrial grade | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 54 | EAR99 | AUTO/SELF REFRESH | 3V~3.6V | BOTTOM | 1 | 3.3V | 0.8mm | 不合格 | 3.3V | 3.6V | 3V | 128Mb 8M x 16 | 1 | SYNCHRONOUS | 143MHz | 5.4ns | DRAM | Parallel | 16b | 8MX16 | 3-STATE | 16 | 12b | 128 Mb | 0.002A | COMMON | 4096 | 1248FP | 1248 | 1.2mm | 8mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CAT25320VP2I-GT3 | ON Semiconductor | 数据表 | 5000 In Stock | - | 最小起订量: 1 最小包装量: 1 | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | e4 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 100 YEAR DATA RETENTION | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | CAT25320 | 8 | 5V | SPI, Serial | 32Kb 4K x 8 | 2mA | 10MHz | 40 ns | EEPROM | SPI | 无卤素 | 8 | 5ms | 32 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE/SOFTWARE | 3mm | 2mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S34ML01G200BHV000 | Cypress Semiconductor Corp | 数据表 | 531 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 63-VFBGA | 63 | Non-Volatile | -40°C~105°C TA | Tray | ML-2 | Discontinued | 3 (168 Hours) | 63 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 未说明 | 1 | 3.3V | 0.8mm | 未说明 | 3.6V | 2.7V | 1Gb 128M x 8 | ASYNCHRONOUS | FLASH | Parallel | 128MX8 | 8 | 25ns | 28b | 1 Gb | 3V | 2kB | 1mm | 11mm | ROHS3 Compliant |
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