类别是'category.存储器' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 类型 | 端子表面处理 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 工作电源电流 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 建筑学 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 产品类别 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间(最大) | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 输出启用 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 产品类别 | 组织的记忆 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
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S25FL164K0XBHI033 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 24-TBGA | 24 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2015 | FL1-K | e1 | Obsolete | 3 (168 Hours) | 24 | 锡银铜 | ALSO CONFIGURABLE AS 64M X 1 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 64Mb 8M x 8 | 25mA | 25mA | 108MHz | 8.5 ns | FLASH | SPI - Quad I/O | 8b | 16MX4 | 4 | 3ms | 24b | 64 Mb | 0.000005A | Synchronous | 8b | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2 | 256B | 1.2mm | 8mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IS39LV040-70JCE | ISSI, Integrated Silicon Solution Inc | 数据表 | 4223 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 32-LCC (J-Lead) | 32 | Non-Volatile | -40°C~105°C TA | Tube | 不用于新设计 | 3 (168 Hours) | 32 | 2.7V~3.6V | QUAD | 1 | 3V | 1.27mm | 3.3V | 3.6V | 2.7V | 4Mb 512K x 8 | 15mA | 15mA | FLASH | Parallel | 8b | 512KX8 | 8 | 70ns | 19b | 4 Mb | 70 ns | Asynchronous | 8b | 3V | 3.56mm | 13.97mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S29GL128S10FHIV20 | Cypress Semiconductor Corp | 数据表 | 1800 In Stock | - | 最小起订量: 1 最小包装量: 1 | 13 Weeks | 表面贴装 | 64-LBGA | YES | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2015 | GL-S | e1 | 活跃 | 3 (168 Hours) | 64 | 3A991.B.1.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | 1.65V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 30 | 不合格 | 3.6V | 3/3.3V | 2.7V | 128Mb 8M x 16 | ASYNCHRONOUS | 0.08mA | 100ns | FLASH | Parallel | 8MX16 | 16 | 60ns | 0.0001A | 134217728 bit | 3V | YES | YES | YES | 128 | 64K | 16words | YES | YES | 1.4mm | 13mm | 11mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BR25H040F-2CE2 | ROHM Semiconductor | 数据表 | 44 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | Automotive grade | -40°C~125°C TA | Cut Tape (CT) | 2013 | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | ALSO OPERATES AT 2.5V WITH 5MHZ AND SEATED HT-CALCULATED | 2.5V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | 不合格 | 5.5V | 3/5V | 4.5V | 4Kb 512 x 8 | SYNCHRONOUS | 10MHz | EEPROM | SPI | 8 | 4ms | 0.00001A | 4096 bit | SERIAL | SPI | 1000000 Write/Erase Cycles | 4ms | 100 | HARDWARE/SOFTWARE | 1.71mm | 5mm | 4.4mm | Unknown | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 24C01CTESNRVA | Microchip | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M24C32-DRDW8TP/K | STMicroelectronics | 数据表 | 2609 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 14 Weeks | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~105°C TA | Cut Tape (CT) | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 未说明 | 1 | 2.5V | 0.65mm | 未说明 | M24C32 | 不合格 | 5.5V | 2/5V | 2-Wire, I2C, Serial | 32Kb 4K x 8 | SYNCHRONOUS | 1MHz | 450ns | EEPROM | I2C | 8 | 4ms | 0.000001A | I2C | 900000 Write/Erase Cycles | 4ms | 50 | HARDWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 34AA04T-E/ST | Microchip Technology | 数据表 | 31 In Stock | - | 最小起订量: 1 最小包装量: 1 | 5 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | Non-Volatile | Automotive grade | -40°C~125°C TA | Tape & Reel (TR) | 2016 | e3 | 活跃 | 1 (Unlimited) | 8 | 1.7V~3.6V | DUAL | 260 | 1 | 2.2V | 0.65mm | 40 | 34AA04 | R-PDSO-G8 | 3.6V | 1.7V | 2-Wire, I2C, Serial | 4Kb 256 x 8 x 2 | SYNCHRONOUS | 1MHz | 350ns | EEPROM | I2C | 512X8 | 8 | 5ms | 4096 bit | TS 16949 | I2C | 5ms | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MR2A16AMA35 | Everspin Technologies Inc. | 数据表 | 4568 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 48-LFBGA | 48 | Non-Volatile | 0°C~70°C TA | Tray | 2012 | 活跃 | 3 (168 Hours) | 48 | EAR99 | 8542.32.00.71 | 3V~3.6V | BOTTOM | 未说明 | 1 | 3.3V | 0.75mm | 未说明 | 48 | 不合格 | 3.3V | 3.6V | 3V | 4Mb 256K x 16 | 105mA | 155mA | ASYNCHRONOUS | RAM | Parallel | 16b | 256KX16 | 16 | 35ns | 4 Mb | 0.028A | 35 ns | 16b | 1.35mm | 8mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1366C-166AXCT | Cypress Semiconductor Corp | 数据表 | 15 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2003 | e4 | yes | 活跃 | 3 (168 Hours) | 3A991.B.2.A | Nickel/Palladium/Gold (Ni/Pd/Au) | 3.135V~3.6V | CY7C1366 | 3.3V | 9Mb 256K x 36 | 4 | 180mA | 166MHz | 3.5ns | SRAM | Parallel | 18b | 9 Mb | Synchronous | 36b | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT28C256E-20DM/883-815 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 23 Weeks | 通孔 | 28-CDIP (0.600, 15.24mm) | NO | Non-Volatile | Military grade | -55°C~125°C TC | Tube | 1997 | 活跃 | 1 (Unlimited) | 28 | 自动写入 | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | R-GDIP-T28 | 5.5V | 4.5V | 256Kb 32K x 8 | ASYNCHRONOUS | 200ns | EEPROM | Parallel | 32KX8 | 8 | 10ms | 262144 bit | MIL-STD-883 Class C | 5V | 10ms | 5.72mm | 37.215mm | 15.24mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AS7C31026C-12TIN | Alliance Memory, Inc. | 数据表 | 32 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tube | 2006 | yes | 活跃 | 3 (168 Hours) | 44 | 3V~3.6V | DUAL | 1 | 3.3V | 0.8mm | 1MHz | 44 | 3.3V | 3.6V | 3V | 1Mb 64K x 16 | 1 | SRAM | Parallel | 12ns | 16b | 1 Mb | 1mm | 18.42mm | 10.16mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STK14D88-RF45I | Cypress Semiconductor Corp | 数据表 | 750 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 48-BSSOP (0.295, 7.50mm Width) | 48 | Non-Volatile | -40°C~85°C TA | Tube | 2005 | e3 | Obsolete | 3 (168 Hours) | 48 | EAR99 | Matte Tin (Sn) | 8542.32.00.41 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.635mm | unknown | 20 | STK14D88 | 48 | 不合格 | 3.3V | 3.6V | 2.7V | 256Kb 32K x 8 | 55mA | ASYNCHRONOUS | NVSRAM | Parallel | 8b | 32KX8 | 8 | 45ns | 256 kb | 0.003A | 45 ns | 8b | 2.79mm | 15.875mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M93C66-WMN6 | STMicroelectronics | 数据表 | 1974 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | e0 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 锡铅 | 2.5V~5.5V | DUAL | 1 | 5V | 1.27mm | M93C66 | 8 | 5.5V | 3/5V | 2.5V | Serial | 4Kb 512 x 8 256 x 16 | 2mA | 2MHz | 4 μs | EEPROM | SPI | 256X16 | 3-STATE | 5ms | 4 kb | 0.000002A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 40 | SOFTWARE | 1.25mm | 4.9mm | 3.9mm | 无 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IS42S32200E-6TL-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | 12525 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 86-TFSOP (0.400, 10.16mm Width) | 86 | Volatile | 0°C~70°C TA | Tape & Reel (TR) | e3 | yes | Obsolete | 2 (1 Year) | 86 | EAR99 | 哑光锡 | AUTO/SELF REFRESH | 8542.32.00.02 | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.5mm | 40 | 86 | 3.3V | 3.6V | 3V | 64Mb 2M x 32 | 1 | 160mA | 166MHz | 5.5ns | DRAM | Parallel | 32b | 2MX32 | 3-STATE | 32 | 13b | 64 Mb | 0.002A | COMMON | 4096 | 1248FP | 1248 | 1.2mm | 22.22mm | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1370DV25-200BZC | Cypress Semiconductor Corp | 数据表 | 50 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2004 | NoBL™ | e0 | no | Obsolete | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 2.375V~2.625V | BOTTOM | 1 | 2.5V | 1mm | CY7C1370 | 165 | 2.5V | 2.625V | 2.375V | 18Mb 512K x 36 | 4 | 300mA | 200MHz | 3ns | SRAM | Parallel | 512KX36 | 3-STATE | 36 | 19b | 18 Mb | 0.07A | COMMON | Synchronous | 36b | 18 | YES | 15mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | GS8161Z36DGT-150I | GSI Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | TQFP-100 | YES | 100 | 133.3@Flow-Through/150@Pipelined MHz | TQFP | SDR | 2.5, 3.3 V | 2.3, 3 V | Synchronous | 512 kWords | 36 Bit | 2.7, 3.6 V | 表面贴装 | 有 | 150 MHz | + 85 C | 3.6 V | - 40 C | 36 | SDR | Details | NBT SRAM | GSI技术 | GSI技术 | Parallel | SMD/SMT | 2.3 V | LQFP, | FLATPACK, LOW PROFILE | 512000 | PLASTIC/EPOXY | -40 °C | 未说明 | 7.5 ns | 85 °C | 有 | GS8161Z36DGT-150I | 2.5 V | LQFP | RECTANGULAR | 活跃 | GSI TECHNOLOGY | 1.66 | QFP | Industrial grade | -40 to 85 °C | Tray | GS8161Z36DGT | 3A991.B.2.B | NBT | ALSO OPERATES AT 3.3V | 8542.32.00.41 | Memory & Data Storage | CMOS | QUAD | 鸥翼 | 未说明 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | 2.7 V | INDUSTRIAL | 2.3 V | 18 Mbit | 4 | SYNCHRONOUS | 200 mA, 210 mA | 7.5 ns | Flow-Through/Pipelined | 512 k x 36 | 1.6 mm | 36 | 19 Bit | SRAM | 18 Mbit | 18874368 bit | Industrial | PARALLEL | ZBT SRAM | SRAM | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 5962-3829412MZA | Renesas Electronics America Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 28-CDIP (0.300", 7.62mm) | 28-CDIP | Renesas Electronics America Inc | 活跃 | 5962-3829412 | This product may require additional documentation to export from the United States. | + 125 C | 5.5 V | - 55 C | 13 | 4.5 V | 通孔 | Parallel | Renesas Electronics | Renesas Electronics | N | Tube | Volatile | -55°C ~ 125°C (TA) | Tube | - | Asynchronous | Memory & Data Storage | 4.5V ~ 5.5V | 64Kbit | 35 ns | SRAM | Parallel | 8 k x 8 | 35ns | SRAM | SRAM | 8K x 8 | 3.56 mm | 37.72 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IS45S16160G-7BLA1-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 54-TFBGA | 54 | Volatile | Automotive grade | -40°C~85°C TA | Tape & Reel (TR) | e1 | 活跃 | 3 (168 Hours) | 54 | EAR99 | 锡银铜 | AUTO/SELF REFRESH | 3V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.8mm | 10 | 3.3V | 3.6V | 3V | 256Mb 16M x 16 | 1 | 130mA | 143MHz | 5.4ns | DRAM | Parallel | 16b | 16MX16 | 3-STATE | 16 | 15b | 256 Mb | 0.004A | AEC-Q100 | COMMON | 8192 | 1248FP | 1248 | 1.2mm | 8mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IS61WV6416BLL-12BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | 2250 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Volatile | -40°C~85°C TA | Tray | e1 | yes | 活跃 | 2 (1 Year) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 3V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.75mm | 40 | 48 | 3.3V | 3.63V | 2.97V | 1Mb 64K x 16 | 1 | 45mA | SRAM | Parallel | 3-STATE | 16 | 12ns | 16b | 1 Mb | 0.05A | COMMON | Asynchronous | 16b | 8mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 5962-8866204NA | Renesas Electronics America Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 28-CDIP (0.300", 7.62mm) | 28-CDIP | Renesas Electronics America Inc | Tube | 5962-8866204 | This product may require additional documentation to export from the United States. | + 125 C | 5.5 V | - 55 C | 13 | 4.5 V | 通孔 | Parallel | Renesas Electronics | Renesas Electronics | N | Volatile | 活跃 | -55°C ~ 125°C (TA) | Tube | - | Asynchronous | Memory & Data Storage | 4.5V ~ 5.5V | 256Kbit | 150 mA | 45 ns | SRAM | Parallel | 32 k x 8 | 45ns | SRAM | SRAM | 32K x 8 | 3.56 mm | 37.72 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1525KV18-250BZXI | Cypress Semiconductor Corp | 数据表 | 2305 In Stock | - | 最小起订量: 1 最小包装量: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C1525 | 165 | 1.8V | 1.9V | 1.7V | 72Mb 8M x 9 | 2 | 640mA | 250MHz | 450 ps | SRAM | Parallel | 8MX9 | 3-STATE | 9 | 22b | 72 Mb | SEPARATE | Synchronous | 9b | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MT47H128M8CF-3:H | Micron Technology Inc. | 数据表 | 16000 In Stock | - | 最小起订量: 1 最小包装量: 1 | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 60-TFBGA | 60 | Volatile | 0°C~85°C TC | Tray | 2008 | e1 | yes | Obsolete | 3 (168 Hours) | 60 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.32 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 0.8mm | 30 | MT47H128M8 | 60 | 1.8V | 1.9V | 1.7V | 1Gb 128M x 8 | 1 | 115mA | 333MHz | 450ps | DRAM | Parallel | 8b | 128MX8 | 3-STATE | 8 | 15ns | 17b | 1 Gb | 667MHz | COMMON | 8192 | 48 | 48 | 1.2mm | 10mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93LC66BT/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2000 | e3 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 0.65mm | 40 | 93LC66B | 8 | 5.5V | 6V | 3/5V | 2.5V | 2-Wire, Serial | 4Kb 256 x 16 | 1.5mA | 2MHz | 6 ms | EEPROM | SPI | 256X16 | 16 | 4 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 200 | SOFTWARE | 1.1mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S29AS016J70BHIF30 | Cypress Semiconductor Corp | 数据表 | 3210 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 48-VFBGA | YES | 48 | Non-Volatile | -40°C~85°C TA | Tray | AS-J | Obsolete | 3 (168 Hours) | 48 | EAR99 | 8542.32.00.51 | 1.65V~1.95V | BOTTOM | 1 | 1.8V | 0.5mm | 1.8V | 1.95V | 1.65V | 16Mb 2M x 8 1M x 16 | 12mA | FLASH | Parallel | 8b | 1MX16 | 16 | 70ns | 20b | 16 Mb | 70 ns | 8 | TOP | 1mm | 6mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY62126DV30L-55ZSXE | Cypress Semiconductor Corp | 数据表 | 2271 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | Volatile | -40°C~125°C TA | Tube | 2006 | MoBL® | e4 | Obsolete | 1 (Unlimited) | 44 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | 2.2V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | unknown | 20 | CY62126 | 44 | R-PDSO-G44 | 不合格 | 3.6V | 2.5/3.3V | 2.2V | 1Mb 64K x 16 | 0.01mA | SRAM | Parallel | 64KX16 | 3-STATE | 16 | 55ns | 0.00001A | 1048576 bit | 55 ns | COMMON | 1.5V | 1.194mm | 18.415mm | 10.16mm | ROHS3 Compliant |
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