类别是'category.存储器' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 类型 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 电压 - 额定直流 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 产品类别 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间(最大) | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 输出启用 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 产品类别 | 组织的记忆 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | RoHS状态 | 无铅 | ||||||||||||||||||||||||||||||||||||
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CY7C1570KV18-500BZXI | Cypress Semiconductor Corp | 数据表 | 2162 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e1 | Obsolete | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | unknown | 20 | CY7C1570 | 165 | 不合格 | 1.8V | 72Mb 2M x 36 | 1 | 890mA | 500MHz | 450 ps | SRAM | Parallel | 2MX36 | 3-STATE | 36 | 20b | 72 Mb | 0.36A | COMMON | Synchronous | 36b | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT25DF021A-SSHN-T | Adesto Technologies | 数据表 | 7 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 2013 | 活跃 | 1 (Unlimited) | 85°C | -40°C | 1.65V~3.6V | 104MHz | SPI, Serial | 3.6V | 1.65V | 2Mb 256K x 8 | 104MHz | 7.5 ns | FLASH | SPI | 8μs, 2.5ms | 16 Mb | 256B | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M48Z12-200PC1 | STMicroelectronics | 数据表 | 5436 In Stock | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 通孔 | 24-DIP Module (0.600, 15.24mm) | 24 | Non-Volatile | 0°C~70°C TA | Tube | e3 | Obsolete | 1 (Unlimited) | 24 | EAR99 | Matte Tin (Sn) | BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION | 8542.32.00.41 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 2.54mm | 200GHz | 10 | M48Z12 | 24 | 不合格 | 5V | 5V | 16Kb 2K x 8 | 1 | 80mA | ASYNCHRONOUS | NVSRAM | Parallel | 8b | 2KX8 | 3-STATE | 8 | 200ns | 16 kb | 0.003A | 200 ns | 8b | YES | 9.65mm | 34.545mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IS64LF12836EC-7.5B3LA3 | ISSI, Integrated Silicon Solution Inc | 数据表 | 1737 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 165-TBGA | YES | 165 | Volatile | Automotive grade | -40°C~125°C TA | Tray | e1 | 活跃 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 3.135V~3.465V | BOTTOM | 260 | 1 | 3.3V | 1mm | 10 | 165 | 不合格 | 2.5/3.33.3V | 3.135V | 4.5Mb 128K x 36 | 4 | 185mA | 117MHz | 7.5ns | SRAM | Parallel | 128KX36 | 3-STATE | 36 | 17b | 4 Mb | 0.1A | AEC-Q100 | COMMON | Synchronous | 36b | 1.2mm | 15mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NAND256W3A2BZA6E | Micron Technology Inc. | 数据表 | 370 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 55-TFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2004 | e1 | yes | Obsolete | 3 (168 Hours) | 55 | 3A991.B.1.A | 锡银铜 | 8542.32.00.51 | 3V | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 30 | NAND256-A | 55 | R-PBGA-B55 | 3V | 256Mb 32M x 8 | 20mA | FLASH | Parallel | 32MX8 | 8 | 50ns | 25b | 256 Mb | 0.00005A | 35 ns | Asynchronous | 8b | NO | NO | YES | 2K | 16K | 512words | YES | 1.05mm | 10mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M29W320DB70N6E | STMicroelectronics | 数据表 | 2392 In Stock | - | 最小起订量: 1 最小包装量: 1 | YES | 48 | 有 | M29W320DB70N6E | 2097152 words | 3.3 V | TSSOP | RECTANGULAR | Micron Technology Inc | Obsolete | MICRON TECHNOLOGY INC | 5.61 | TSOP | TSSOP, TSSOP48,.8,20 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 2000000 | PLASTIC/EPOXY | TSSOP48,.8,20 | -40 °C | 30 | 70 ns | 85 °C | e3 | 有 | 3A991.B.1.A | NOR型号 | Matte Tin (Sn) | 底部启动区块 | 8542.32.00.51 | 闪存 | CMOS | DUAL | 鸥翼 | 260 | 1 | 0.5 mm | compliant | 48 | R-PDSO-G48 | 不合格 | 3.6 V | 3.3 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 2MX16 | 1.2 mm | 16 | 0.0001 A | 33554432 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,63 | 16K,8K,32K,64K | YES | BOTTOM | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS25LP032D-JBLA3 | ISSI, Integrated Silicon Solution Inc | 数据表 | 2794 In Stock | - | 最小起订量: 1 最小包装量: 1 | 2 Weeks | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | Non-Volatile | Automotive grade | -40°C~125°C TA | Tray | Automotive, AEC-Q100 | e3 | 活跃 | 3 (168 Hours) | 8 | Tin (Sn) | 2.3V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | S-PDSO-G8 | 3.6V | 2.3V | 32Mb 4M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O, QPI, DTR | 4MX8 | 8 | 800μs | 33554432 bit | SERIAL | 3V | 1 | 2.16mm | 5.28mm | 5.28mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C0852V-167BBC | Cypress Semiconductor Corp | 数据表 | 25 In Stock | - | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 172-LFBGA | 172 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | no | Obsolete | 3 (168 Hours) | 172 | Tin/Lead (Sn/Pb) | 流水线结构 | 3.135V~3.465V | BOTTOM | 220 | 1 | 3.3V | 1mm | CY7C0852 | 172 | 3.3V | 3.465V | 3.135V | 4.5Mb 128K x 36 | 2 | 300mA | 167MHz | 4 ns | SRAM | Parallel | 3-STATE | 36 | 17b | 4 Mb | 0.075A | COMMON | Synchronous | 36b | 3.14V | 15mm | 无 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BR25L010FVM-WTR | ROHM Semiconductor | 数据表 | 9000 In Stock | - | 最小起订量: 1 最小包装量: 1 | Copper, Tin | 表面贴装 | 表面贴装 | 8-VSSOP, 8-MSOP (0.110, 2.80mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | e2 | yes | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | Tin/Copper (Sn97.5Cu2.5) | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 10 | BR25L010 | 8 | 5V | SPI, Serial | 1Kb 128 x 8 | 3mA | 5MHz | 70 ns | EEPROM | SPI | 8 | 5ms | 1 kb | 0.000002A | SPI | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 0.9mm | 2.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MX29GL128FLT2I-90G | Macronix | 数据表 | 213 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | YES | 56 | Non-Volatile | -40°C~85°C TA | Tray | 2004 | MX29GL | e3 | 活跃 | 3 (168 Hours) | 56 | Matte Tin (Sn) | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | 不合格 | 3.6V | 3/3.3V | 2.7V | 128Mb 16M x 8 | ASYNCHRONOUS | FLASH | Parallel | 8MX16 | 16 | 90ns | 128 Mb | 0.00003A | 90 ns | 3V | 8 | YES | YES | YES | 128 | 128K | 8/16words | YES | YES | 1.2mm | 18.4mm | 14mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BR93G86FJ-3GTE2 | ROHM Semiconductor | 数据表 | 2206 In Stock | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | 2016 | yes | Discontinued | 1 (Unlimited) | 8 | SEATED HT-CALCULATED AND ALSO OPERATES AT 1.7V WITH 1MHZ AMD 2.5V AT 2MHZ | 1.7V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | 5.5V | 4.5V | Serial | 16Kb 2K x 8 1K x 16 | SYNCHRONOUS | 3MHz | EEPROM | SPI | 1KX16 | 16 | 5ms | 3-WIRE | 5ms | 8 | 1.65mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93AA66AT-I/ST | Microchip Technology | 数据表 | 14 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 93AA66A | 8 | 5.5V | 2/5V | Serial | 4Kb 512 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 8 | 6ms | 4 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1480V33-200AXC | Cypress Semiconductor Corp | 数据表 | 2904 In Stock | - | 最小起订量: 1 最小包装量: 1 | 9 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2004 | e3 | yes | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.A | Matte Tin (Sn) | 流水线结构 | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 20 | CY7C1480 | 100 | 3.3V | 3.6V | 3.135V | 72Mb 2M x 36 | 4 | 500mA | 200MHz | 3ns | SRAM | Parallel | 2MX36 | 3-STATE | 36 | 21b | 72 Mb | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY62256LL-70ZXC | Cypress Semiconductor Corp | 数据表 | 17 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 28-TSSOP (0.465, 11.80mm Width) | YES | Volatile | 0°C~70°C TA | Tray | 2002 | MoBL® | e4 | Obsolete | 1 (Unlimited) | 28 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.55mm | unknown | 70GHz | 20 | CY62256 | 28 | R-PDSO-G28 | 不合格 | 5.5V | 5V | 4.5V | 256Kb 32K x 8 | 0.05mA | SRAM | Parallel | 32KX8 | 3-STATE | 8 | 70ns | 262144 bit | 70 ns | COMMON | 2V | 1.2mm | 11.8mm | 8mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C0852AV-133AXC | Cypress Semiconductor Corp | 数据表 | 29 In Stock | - | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 176-LQFP | 176 | Volatile | 0°C~70°C TA | Tray | 2003 | e3 | Obsolete | 3 (168 Hours) | 176 | Matte Tin (Sn) | 流水线结构 | 3.135V~3.465V | QUAD | 260 | 1 | 3.3V | 0.5mm | 30 | CY7C0852 | 176 | 3.3V | 3.465V | 3.135V | 4.5Mb 128K x 36 | 2 | 300mA | 133MHz | 4.4 ns | SRAM | Parallel | 3-STATE | 36 | 17b | 4 Mb | 0.075A | COMMON | Synchronous | 36b | 3.14V | 1.6mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | R1EX24064ATAS0I#S0 | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 20 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | yes | Obsolete | 1 (Unlimited) | 8 | 1.8V~5.5V | DUAL | 1 | 3.3V | 0.65mm | R1EX24064 | 8 | 5.5V | 2/5V | 2-Wire, I2C, Serial | 64Kb 8K x 8 | 400kHz | 0.003mA | 900ns | EEPROM | I2C | 8 | 5ms | 64 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE | 1010DDDR | 1.1mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M95080-DFMN6TP | STMicroelectronics | 数据表 | 31 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 13 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | DUAL | 1 | 1.8V | 1.27mm | M95080 | 5.5V | 1.7V | SPI, Serial | 8Kb 1K x 8 | 20MHz | 80 ns | EEPROM | SPI | 8 | 5ms | 8 kb | SPI | 5ms | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1347D-200AC | Cypress Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 100 | 无 | CY7C1347D-200AC | 131072 words | 3.3 V | LQFP | RECTANGULAR | 赛普拉斯半导体 | Obsolete | CYPRESS SEMICONDUCTOR CORP | 5.5 | QFP | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | FLATPACK, LOW PROFILE | 3 | 128000 | PLASTIC/EPOXY | QFP100,.63X.87 | 30 | 3 ns | 70 °C | e0 | 无 | 3A991.B.2.A | TIN LEAD (800) | 流水线结构 | 8542.32.00.41 | SRAMs | CMOS | QUAD | 鸥翼 | 225 | 1 | 0.65 mm | compliant | 100 | R-PQFP-G100 | 不合格 | 3.63 V | 3.3 V | COMMERCIAL | 3.135 V | SYNCHRONOUS | 0.36 mA | 128KX36 | 3-STATE | 1.6 mm | 36 | 0.01 A | 4718592 bit | PARALLEL | COMMON | 缓存SRAM | 3.14 V | 20 mm | 14 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT28HC64B-70JI | Atmel | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 8403609LA | Renesas Electronics America Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 24-CDIP (0.300", 7.62mm) | NO | 24-CDIP | 24 | Tube | Volatile | 最后一次购买 | 840360 | This product may require additional documentation to export from the United States. | + 125 C | 5.5 V | - 55 C | 15 | 4.5 V | Renesas Electronics America Inc | 通孔 | Parallel | Renesas Electronics | Renesas Electronics | N | DIP, DIP24,.3 | IN-LINE | 2000 | CERAMIC, GLASS-SEALED | DIP24,.3 | -55 °C | 45 ns | 125 °C | 8403609LA | 2048 words | 5 V | DIP | RECTANGULAR | 活跃 | TELEDYNE E2V (UK) LTD | 5.27 | DIP | Military grade | -55°C ~ 125°C (TA) | Tube | - | 3A001.A.2.C | Asynchronous | 8542.32.00.41 | Memory & Data Storage | 4.5V ~ 5.5V | DUAL | THROUGH-HOLE | 1 | 2.54 mm | compliant | 24 | R-GDIP-T24 | 不合格 | 5.5 V | 5 V | MILITARY | 4.5 V | 16Kbit | 1 | ASYNCHRONOUS | 95 mA | 45 ns | SRAM | Parallel | 2 k x 8 | 3-STATE | 8 | 45ns | SRAM | 0.02 A | 16384 bit | 38535Q/M;38534H;883B | PARALLEL | COMMON | 标准SRAM | 4.5 V | SRAM | 2K x 8 | 3.56 mm | 32.51 mm | 7.62 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST39VF401C-70-4C-B3KE | Microchip Technology | 数据表 | 55 In Stock | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Non-Volatile | 0°C~70°C TA | Tray | 2011 | SST39 MPF™ | e1 | 活跃 | 3 (168 Hours) | 48 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 底部启动区块 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 40 | SST39VF401C | 48 | 3.3V | 3.6V | 2.7V | 4Mb 256K x 16 | 18mA | 70ns | FLASH | Parallel | 256KX16 | 16 | 10μs | 1b | 4 Mb | 0.00002A | Asynchronous | 16b | 2.7V | YES | YES | YES | 128 | 2K | YES | BOTTOM | YES | 1.2mm | 8mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IS43R16160D-5TL-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | 6235 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 66-TSSOP (0.400, 10.16mm Width) | YES | 66 | Volatile | 0°C~70°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 66 | 2.3V~2.7V | DUAL | 2.5V | 0.635mm | 不合格 | 2.5V | 256Mb 16M x 16 | 200MHz | 700ps | DRAM | Parallel | 16b | 16MX16 | 3-STATE | 16 | 15ns | 0.004A | 268435456 bit | COMMON | 8192 | 248 | 248 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IS61LV12816L-10BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | 10 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Volatile | -40°C~85°C TA | Tray | e1 | yes | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 3.135V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.75mm | 40 | 48 | 3.3V | 3.63V | 2.97V | 2Mb 128K x 16 | 1 | 65mA | SRAM | Parallel | 3-STATE | 10ns | 17b | 2 Mb | 0.004A | COMMON | Asynchronous | 16b | 600μm | 8mm | 6mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S29PL032J55BFI120 | Cypress Semiconductor Corp | 数据表 | 63 In Stock | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2016 | PL-J | e1 | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 上下靴块 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 40 | 3.6V | 3/3.3V | 2.7V | 32Mb 2M x 16 | 55mA | FLASH | Parallel | 2MX16 | 16 | 55ns | 21b | 32 Mb | 0.000005A | 55 ns | Asynchronous | 16b | 3V | YES | YES | YES | 1662 | 4K32K | 8words | YES | BOTTOM/TOP | YES | 1mm | 8.15mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY14E256L-SZ45XC | Cypress Semiconductor Corp | 数据表 | 3579 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 32-SOIC (0.295, 7.50mm Width) | 32 | Non-Volatile | 0°C~70°C TA | Tube | 2005 | e3 | Obsolete | 3 (168 Hours) | 32 | EAR99 | Matte Tin (Sn) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | unknown | 20 | CY14*256 | 32 | 不合格 | 5V | 5V | 256Kb 32K x 8 | 70mA | ASYNCHRONOUS | NVSRAM | Parallel | 8b | 8 | 45ns | 256 kb | 0.0015A | 45 ns | 8b | 2.54mm | 20.726mm | ROHS3 Compliant | 无铅 |
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