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产品型号	品牌	数据表	库存	价格(含增值税)	数量	工厂交货时间	包装/外壳	表面安装	引脚数	终端数量																																														操作温度	包装	系列	JESD-609代码	无铅代码	ECCN 代码	类型	端子表面处理	附加功能	HTS代码	子类别	技术	端子位置	终端形式	峰值回流焊温度（摄氏度）	功能数量	端子间距	Reach合规守则	JESD-30代码	资历状况	电源	温度等级	内存大小	端口的数量	操作模式	电源电流-最大值	访问时间	建筑学	组织结构	输出特性	座位高度-最大	内存宽度	地址总线宽度	产品类别	密度	待机电流-最大值	记忆密度	筛选水平	并行/串行	I/O类型	内存IC类型	串行总线类型	耐力	写入周期时间 - 最大值	数据保持时间	写入保护	待机电压-最小值	电压 - 供电（最大值）	电压 - 供电（最小值）	产品类别	长度	宽度
GS8161E36DGT-250IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Industrial grade				181.8@Flow-Through/250@Pipelined MHz	TQFP	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	512 kWords	36 Bit	2, 2.7 V	表面贴装	有	250 MHz	+ 85 C	2.7 V	- 40 C	18	1.7 V	-40 to 85 °C	Tray	GS8161E36DGT				DCD Pipeline/Flow Through				Memory & Data Storage												18 Mbit	4		245 mA, 265 mA	5.5 ns	Flow-Through/Pipelined	512 k x 36				19 Bit	SRAM	18 Mbit			Industrial												SRAM
GS8162Z18DGB-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-119	YES	119	119	2.3, 3 V	Synchronous	1 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	400 MHz	+ 70 C	3.6 V	0 C	21	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	BGA,	网格排列	1000000	PLASTIC/EPOXY	未说明	4 ns	85 °C	有	GS8162Z18DGB-400	2.5 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.27	BGA	Commercial grade	250@Flow-Through/400@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	0 to 85 °C	Tray	GS8162Z18DGB			3A991.B.2.B	NBT Pipeline/Flow Through		FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119	不合格		OTHER	18 Mbit	2	SYNCHRONOUS	255 mA, 335 mA	4 ns	Flow-Through/Pipelined	1 M x 18		1.99 mm	18	20 Bit	SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		ZBT SRAM							2.7 V	2.3 V	SRAM	22 mm	14 mm
GS8342Q18BD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	Parallel	GSI技术	GSI技术	SigmaQuad-II	DDR	Industrial grade				333 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	333 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS8342Q18BD				SigmaQuad-II				Memory & Data Storage												36 Mbit	2		895 mA		Pipelined	2 M x 18				20 Bit	SRAM	36 Mbit			Industrial												SRAM
GS8162Z18DB-375	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-119	YES	119	119	2.3, 3 V	Synchronous	1 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	375 MHz	+ 70 C	3.6 V	0 C	21	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	N	SDR	BGA,	网格排列	1000000	PLASTIC/EPOXY	未说明	4.2 ns	85 °C	无	GS8162Z18DB-375	2.5 V	BGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.27	BGA	Commercial grade	238@Flow-Through/375@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	0 to 85 °C	Tray	GS8162Z18DB			3A991.B.2.B	NBT Pipeline/Flow Through		FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1.27 mm	compliant	R-PBGA-B119	不合格		OTHER	18 Mbit	2	SYNCHRONOUS	250 mA, 320 mA	4.2 ns	Flow-Through/Pipelined	1 M x 18		1.99 mm	18	20 Bit	SRAM	18 Mbit		18874368 bit	Commercial	PARALLEL		ZBT SRAM							2.7 V	2.3 V	SRAM	22 mm	14 mm
GS8342T11BD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SigmaDDR-II+	N	DDR	Commercial grade				400 MHz	FBGA	DDR	1.8000 V	Synchronous	4 MWords	9 Bit	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	0 to 85 °C	Tray	GS8342T11BD				SigmaQuad-II+				Memory & Data Storage												36 Mbit	1		600 mA		Pipelined	4 M x 9				21 Bit	SRAM	36 Mbit			Commercial												SRAM
GS8322Z36AD-150	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	2.3, 3 V	Synchronous	1 MWords	36 Bit	2.7, 3.6 V	表面贴装	有	150 MHz	+ 70 C	3.6 V	0 C	14	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	N	SDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	7.5 ns	70 °C	无	GS8322Z36AD-150	150 MHz	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.12	BGA	Commercial grade	FBGA	SDR	2.5, 3.3 V	0 to 85 °C	Tray	GS8322Z36AD	e0	无	3A991.B.2.B	NBT Pipeline/Flow Through	Tin/Lead (Sn/Pb)	ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	2.5/3.3 V	COMMERCIAL	36 Mbit	4	SYNCHRONOUS	190 mA, 200 mA	7.5 ns	Flow-Through/Pipelined	1 M x 36	3-STATE	1.4 mm	36		SRAM	36 Mbit	0.03 A	37748736 bit	Commercial	PARALLEL	COMMON	ZBT SRAM						2.3 V	2.7 V	2.3 V	SRAM	15 mm	13 mm
GS8342T19BD-333I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	333 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	2000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	未说明	0.45 ns	85 °C	无	GS8342T19BD-333I	333 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.36	BGA	Industrial grade	333 MHz	FBGA	-40 to 100 °C	Tray	GS8342T19BD	e0		3A991.B.2.B	SigmaDDR-II+ B2	Tin/Lead (Sn/Pb)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	INDUSTRIAL	36 Mbit	1	SYNCHRONOUS	525 mA		Pipelined	2 M x 18	3-STATE	1.4 mm	18	20 Bit	SRAM	36 Mbit	0.205 A	37748736 bit	Industrial	PARALLEL	COMMON	DDR SRAM						1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8162Z18DB-150IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-119	119	Parallel	GSI技术	GSI技术	NBT SRAM	SDR	Industrial grade				133.3@Flow-Through/150@Pipelined MHz	FBGA	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	18 Bit	2, 2.7 V	表面贴装	有	150 MHz	+ 85 C	2.7 V	- 40 C	21	1.7 V	SMD/SMT	-40 to 100 °C	Tray	GS8162Z18DB				NBT Pipeline/Flow Through				Memory & Data Storage												18 Mbit	2		180 mA, 200 mA	7.5 ns	Flow-Through/Pipelined	1 M x 18				20 Bit	SRAM	18 Mbit			Industrial												SRAM
GS8182Q18BGD-133	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	DDR	LBGA,	GRID ARRAY, LOW PROFILE	3	1000000	PLASTIC/EPOXY	未说明	0.5 ns	70 °C	有	GS8182Q18BGD-133	1048576 words	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.19	BGA	有	133 MHz	+ 70 C	1.9 V	0 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	Details		Tray	GS8182Q18BGD	e1	有	3A991.B.2.B	SigmaQuad-II	Tin/Silver/Copper (Sn/Ag/Cu)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格		COMMERCIAL	18 Mbit		SYNCHRONOUS	375 mA			1 M x 18		1.4 mm	18		SRAM			18874368 bit		PARALLEL		DDR SRAM							1.9 V	1.7 V	SRAM	15 mm	13 mm
GS88018CGT-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	TQFP-100	YES	100	100	200@Flow-Through/300@Pipelined MHz	TQFP	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	512 kWords	18 Bit	2.7, 3.6 V	表面贴装	有	300 MHz	+ 85 C	3.6 V	- 40 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	LQFP, QFP100,.63X.87	FLATPACK, LOW PROFILE	3	512000	PLASTIC/EPOXY	QFP100,.63X.87	-40 °C	未说明	5 ns	85 °C	有	GS88018CGT-300I	300 MHz	2.5 V	LQFP	RECTANGULAR	活跃	GSI TECHNOLOGY	5.3	QFP	Industrial grade	-40 to 85 °C	Tray	GS88018CGT	e3	有	3A991.B.2.B	Pipeline/Flow Through	纯哑光锡	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	8542.32.00.41	Memory & Data Storage	CMOS	QUAD	鸥翼	260	1	0.65 mm	compliant	R-PQFP-G100	不合格	2.5/3.3 V	INDUSTRIAL	9 Mbit	2	SYNCHRONOUS	170 mA, 225 mA	5 ns	Flow-Through/Pipelined	512 k x 18	3-STATE	1.6 mm	18	19 Bit	SRAM	9 Mbit	0.045 A	9437184 bit	Industrial	PARALLEL	COMMON	缓存SRAM						2.3 V	2.7 V	2.3 V	SRAM	20 mm	14 mm
GS8342T20BGD-400	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR	Commercial grade				400 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	400 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342T20BGD				SigmaQuad-II+				Memory & Data Storage												36 Mbit	1		600 mA		Pipelined	2 M x 18				20 Bit	SRAM	36 Mbit			Commercial												SRAM
GS8342T06BGD-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaDDR-II+	Details	DDR	Commercial grade				350 MHz	FBGA	DDR	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	350 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342T06BGD				SigmaQuad-II+				Memory & Data Storage												36 Mbit	1		565 mA		Pipelined	4 M x 8				21 Bit	SRAM	36 Mbit			Commercial												SRAM
GS8161Z18DD-200I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	2.7, 3.6 V	有	200 MHz	+ 85 C	3.6 V	- 40 C	36	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	SDR	LBGA,	GRID ARRAY, LOW PROFILE	1000000	PLASTIC/EPOXY	-40 °C	未说明	6.5 ns	85 °C	无	GS8161Z18DD-200I	1048576 words	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.26	BGA	Industrial grade	153.8@Flow-Through/200@Pipelined MHz	FBGA	2.5, 3.3 V	2.3, 3 V	Synchronous	18 Bit	-40 to 85 °C	Tray	GS8161Z18DD			3A991.B.2.B	NBT		FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165			INDUSTRIAL	18 Mbit		SYNCHRONOUS	215 mA	6.5@Flow-Through/3@P		1 M x 18		1.4 mm	18		SRAM			18	Industrial	PARALLEL		ZBT SRAM							2.7 V	2.3 V	SRAM	15 mm	13 mm
GS8321Z18AGD-250	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	2.3, 3 V	Synchronous	2 MWords	18 Bit	2.7, 3.6 V	表面贴装	有	250 MHz	+ 70 C	3.6 V	0 C	18	2.3 V	SMD/SMT	Parallel	GSI技术	GSI技术	NBT SRAM	Details	SDR	LBGA,	GRID ARRAY, LOW PROFILE	3	2000000	PLASTIC/EPOXY	未说明	85 °C	有	GS8321Z18AGD-250	2.5 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.3	BGA	Commercial grade	181.8@Flow-Through/250@Pipelined MHz	FBGA	SDR	2.5, 3.3 V	0 to 85 °C	Tray	GS8321Z18AGD	e1	有	3A991.B.2.B	NBT	Tin/Silver/Copper (Sn/Ag/Cu)	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格		OTHER	36 Mbit	2	SYNCHRONOUS	215 mA, 255 mA	5.5 ns	Flow-Through/Pipelined	2 M x 18		1.4 mm	18	21 Bit	SRAM	36 Mbit		37748736 bit	Commercial	PARALLEL		ZBT SRAM							2.7 V	2.3 V	SRAM	15 mm	13 mm
GS8342D19BGD-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	Details	DDR	Commercial grade				350 MHz	FBGA	QDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	350 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	0 to 85 °C	Tray	GS8342D19BGD				SigmaQuad-II+ B4				Memory & Data Storage												36 Mbit	2		665 mA		Pipelined	2 M x 18				19 Bit	SRAM	36 Mbit			Commercial												SRAM
GS8342D06BD-400I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	1.8000 V	1.7 V	Synchronous	4 MWords	8 Bit	1.9 V	表面贴装	有	400 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	4000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	0.45 ns	85 °C	无	GS8342D06BD-400I	400 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.22	BGA	Industrial grade	400 MHz	FBGA	QDR	-40 to 100 °C	Tray	GS8342D06BD			3A991.B.2.B	SigmaQuad-II+		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL		1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	INDUSTRIAL	36 Mbit	2	SYNCHRONOUS	715 mA		Pipelined	4 M x 8	3-STATE	1.4 mm	8	20 Bit	SRAM	36 Mbit	0.235 A	33554432 bit	Industrial	PARALLEL	SEPARATE	QDR SRAM						1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
25AA320ISNG	Microchip	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	8	8	小概要	1	4000	PLASTIC/EPOXY	-40 °C	40	85 °C	有	25AA320-I/SNG	1 MHz	4096 words	2.5 V	SOP	RECTANGULAR	Microchip Technology Inc	不推荐	MICROCHIP TECHNOLOGY INC	5.25	SOIC			3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8				e3	有	EAR99		Matte Tin (Sn)		8542.32.00.51		CMOS	DUAL	鸥翼	260	1	1.27 mm	compliant	R-PDSO-G8	不合格		INDUSTRIAL			SYNCHRONOUS				4KX8		1.75 mm	8					32768 bit		SERIAL		EEPROM	SPI		5 ms				5.5 V	1.8 V		4.9 mm	3.9 mm
GS8342D19BD-350	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	10 Weeks	BGA-165	YES	165	165	QDR	1.8000 V	1.7 V	Synchronous	2 MWords	18 Bit	1.9 V	表面贴装	有	350 MHz	+ 70 C	1.9 V	0 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	N	DDR	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	2000000	PLASTIC/EPOXY	BGA165,11X15,40	未说明	0.45 ns	70 °C	无	GS8342D19BD-350	350 MHz	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.22	BGA	Commercial grade	350 MHz	FBGA	0 to 85 °C	Tray	GS8342D19BD			3A991.B.2.B	SigmaQuad-II+ B4		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	未说明	1	1 mm	compliant	R-PBGA-B165	不合格	1.5/1.8,1.8 V	COMMERCIAL	36 Mbit	2	SYNCHRONOUS	665 mA		Pipelined	2 M x 18	3-STATE	1.4 mm	18	19 Bit	SRAM	36 Mbit	0.22 A	37748736 bit	Commercial	PARALLEL	SEPARATE	QDR SRAM						1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8342DT11BD-350I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	BGA-165	165	1.8000 V	1.7 V	Synchronous	9 Bit	1.9 V	有	350 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	DDR				350 MHz	-40 to 100 °C	Tray	GS8342DT11BD				SigmaQuad-II+				Memory & Data Storage												36 Mbit			675 mA	0.45		4 M x 9					SRAM			36													SRAM
GS88118CGT-300I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	100	512 kWords	18 Bit	2.7, 3.6 V	表面贴装	,	有	GS88118CGT-300I	GSI技术	活跃	GSI TECHNOLOGY	5.8	Industrial grade				TQFP	SDR	2.5, 3.3 V	2.3, 3 V	Synchronous	-40 to 85 °C																	compliant						1				Flow-Through/Pipelined							9 Mbit			Industrial
GS8160E32DGT-150IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Industrial grade				150 MHz	TQFP	SDR	表面贴装	2, 2.7 V	32 Bit	512 kWords	Synchronous	1.7, 2.3 V	1.8, 2.5 V	有	150 MHz	+ 100 C	2.7 V	- 40 C	18	1.7 V	-40 to 85 °C	Tray	GS8160E32DGT				DCD Synchronous Burst				Memory & Data Storage												18 Mbit	4		195 mA, 210 mA	7.5 ns	Flow-Through/Pipelined	512 k x 32				19 Bit	SRAM	18 Mbit			Industrial												SRAM
GS8160E18DGT-200IV	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	TQFP-100	100	SMD/SMT	Parallel	GSI技术	GSI技术	SyncBurst	Details	SDR	Industrial grade				200 MHz	TQFP	SDR	1.8, 2.5 V	1.7, 2.3 V	Synchronous	1 MWords	18 Bit	2, 2.7 V	表面贴装	有	200 MHz	+ 100 C	2.7 V	- 40 C	18	1.7 V	-40 to 85 °C	Tray	GS8160E18DGT				DCD Synchronous Burst				Memory & Data Storage												18 Mbit	2		210 mA, 215 mA	6.5 ns		1 M x 18					SRAM	18 Mbit			Industrial												SRAM
GS8182D18BGD-333	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	8 Weeks	BGA-165	YES	165	165	DDR	LBGA,	GRID ARRAY, LOW PROFILE	3	1000000	PLASTIC/EPOXY	未说明	0.45 ns	70 °C	有	GS8182D18BGD-333	1048576 words	1.8 V	LBGA	RECTANGULAR	活跃	GSI TECHNOLOGY	5.18	BGA	有	333 MHz	+ 70 C	1.9 V	0 C	18	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II	Details		Tray	GS8182D18BGD	e1	有	3A991.B.2.B	SigmaQuad-II	Tin/Silver/Copper (Sn/Ag/Cu)	流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL	260	1	1 mm	compliant	R-PBGA-B165	不合格		COMMERCIAL	18 Mbit		SYNCHRONOUS	515 mA			1 M x 18		1.4 mm	18		SRAM			18874368 bit		PARALLEL		DDR SRAM							1.9 V	1.7 V	SRAM	15 mm	13 mm
GS8672Q38BE-450I	GSI Technology	数据表	N/A	-	最小起订量: 1 最小包装量: 1	12 Weeks	BGA-165	YES	165	165	LBGA, BGA165,11X15,40	GRID ARRAY, LOW PROFILE	2000000	PLASTIC/EPOXY	BGA165,11X15,40	-40 °C	0.45 ns	85 °C	无	GS8672Q38BE-450I	450 MHz	2097152 words	1.8 V	LBGA	RECTANGULAR	Obsolete	GSI TECHNOLOGY	5.92	BGA	有	450 MHz	+ 85 C	1.9 V	- 40 C	15	1.7 V	SMD/SMT	Parallel	GSI技术	GSI技术	SigmaQuad-II+	QDR-II		Tray	GS8672Q38BE			3A991.B.2.B	SigmaQuad-II+ B2		流水线结构	8542.32.00.41	Memory & Data Storage	CMOS	BOTTOM	BALL		1	1 mm	compliant	R-PBGA-B165	不合格	1.5,1.8 V	INDUSTRIAL	72 Mbit		SYNCHRONOUS	2.07 A			2 M x 36	3-STATE	1.4 mm	36		SRAM			72		PARALLEL	SEPARATE	QDR SRAM						1.7 V	1.9 V	1.7 V	SRAM	15 mm	13 mm
25AA160AT-I/SNG	Microchip	数据表	N/A	-	最小起订量: 1 最小包装量: 1	YES	8	8		3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8	小概要	1	2000	PLASTIC/EPOXY	SOP8,.25	-40 °C	40	85 °C	有	25AA160AT-I/SNG	10 MHz	2048 words	2.5 V	SOP	RECTANGULAR	Microchip Technology Inc	不推荐	MICROCHIP TECHNOLOGY INC	5.26	SOIC					e3	有	EAR99		Matte Tin (Sn)		8542.32.00.51	EEPROMs	CMOS	DUAL	鸥翼	260	1	1.27 mm	compliant	R-PDSO-G8	不合格	2/5 V	INDUSTRIAL			SYNCHRONOUS	0.006 mA			2KX8		1.75 mm	8				0.000001 A	16384 bit		SERIAL		EEPROM	SPI	1000000 Write/Erase Cycles	5 ms	200	HARDWARE/SOFTWARE		5.5 V	1.8 V		4.9 mm	3.9 mm