GSI Technology GS8160E32DGT-150IV

包装/外壳

TQFP-100

Maximum Clock Rate

150 MHz

Supplier Package

TQFP

Data Rate Architecture

SDR

Typical Operating Supply Voltage

1.8, 2.5 V

Minimum Operating Supply Voltage

1.7, 2.3 V

Timing Type

Synchronous

Number of Words

512 kWords

Number of I/O Lines

32 Bit

Maximum Operating Supply Voltage

2, 2.7 V

Mounting

表面贴装

Moisture Sensitive

有

Maximum Clock Frequency

150 MHz

Maximum Operating Temperature

+ 100 C

Supply Voltage-Max

2.7 V

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

18

Supply Voltage-Min

1.7 V

Mounting Styles

SMD/SMT

Interface Type

Parallel

Manufacturer

GSI技术

Brand

GSI技术

Tradename

SyncBurst

RoHS

Details

Memory Types

SDR

Usage Level

Industrial grade

操作温度

-40 to 85 °C

系列

GS8160E32DGT

包装

Tray

类型

DCD Synchronous Burst

子类别

Memory & Data Storage

引脚数量

100

内存大小

18 Mbit

端口的数量

4

电源电流-最大值

195 mA, 210 mA

访问时间

7.5 ns

建筑学

Flow-Through/Pipelined

组织结构

512 k x 32

地址总线宽度

19 Bit

产品类别

SRAM

密度

18 Mbit

筛选水平

Industrial

产品类别

SRAM