类别是'category.专用模块' (1062)

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对比

图片

产品型号

品牌

数据表

库存

价格(含增值税)

数量

Rohs

表面安装

终端数量

Concurrent Operation

Default Read Mode

DTR

JESD-609代码

无铅代码

ECCN 代码

端子表面处理

附加功能

HTS代码

端子位置

终端形式

峰值回流焊温度(摄氏度)

功能数量

端子间距

Reach合规守则

频率

时间@峰值回流温度-最大值(s)

引脚数量

JESD-30代码

资历状况

电源电压-最大值(Vsup)

温度等级

电源电压-最小值(Vsup)

电压

端口的数量

操作模式

电源电流-最大值

组织结构

输出特性

座位高度-最大

内存宽度

密度

待机电流-最大值

记忆密度

并行/串行

I/O类型

内存IC类型

待机电压-最小值

输出启用

混合内存类型

温度

长度

宽度

W25R64JVSSIN
W25R64JVSSIN
Winbond 数据表

N/A

-

最小起订量: 1

最小包装量: 1

SOP - 8

208mil

133MHz

2.7 ~ 3.6V

64Mb

-40~+85˚C

HYG0UEG0AF1P-6SS0E
HYG0UEG0AF1P-6SS0E
SK Hynix Inc 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

149

-30 °C

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

1.8 V

活跃

SK HYNIX INC

FBGA-149

33554432 words

32000000

85 °C

EAR99

IT ALSO CONTAINS 512MBIT(64MBIT X 8) MOBILE DDR SDRAM OPERATES AT 2.7V NOM SUPPLY

8542.32.00.71

BOTTOM

BALL

1

0.8 mm

compliant

R-PBGA-B149

1.95 V

OTHER

1.7 V

SYNCHRONOUS

32MX16

1.4 mm

16

536870912 bit

存储器电路

14 mm

10 mm

DS1235YW
DS1235YW
Dallas Semiconductor 数据表

N/A

-

最小起订量: 1

最小包装量: 1

DALLAS SEMICONDUCTOR

Obsolete

EAR99

8542.32.00.71

unknown

S63256
S63256
Asahi Kasei Microsystems Corporation 数据表

N/A

-

最小起订量: 1

最小包装量: 1

活跃

ASAHI KASEI MICRODEVICES CORP

,

EAR99

8542.32.00.71

unknown

M4-4102S-Z2
M4-4102S-Z2
Moujen Switch 数据表

N/A

-

最小起订量: 1

最小包装量: 1

SN74LS219AN
SN74LS219AN
Rochester Electronics LLC 数据表

N/A

-

最小起订量: 1

最小包装量: 1

NO

16

16

70 °C

PLASTIC/EPOXY

DIP

DIP16,.3

RECTANGULAR

IN-LINE

5 V

活跃

ROCHESTER ELECTRONICS LLC

,

80 ns

16 words

EAR99

LG_MAX

8542.32.00.41

DUAL

THROUGH-HOLE

1

2.54 mm

unknown

R-PDIP-T16

5.25 V

4.75 V

1

ASYNCHRONOUS

0.06 mA

16X4

3-STATE

5.08 mm

4

64 bit

PARALLEL

SEPARATE

标准SRAM

4.75 V

NO

19.8 mm

7.62 mm

AM2764A
AM2764A
AMD 数据表

N/A

-

最小起订量: 1

最小包装量: 1

Obsolete

ADVANCED MICRO DEVICES INC

,

EAR99

8542.32.00.71

unknown

TMS4C1060-30N
TMS4C1060-30N
Texas Instruments 数据表

N/A

-

最小起订量: 1

最小包装量: 1

NO

16

PLASTIC/EPOXY

DIP

DIP16,.3

RECTANGULAR

IN-LINE

5 V

Obsolete

TEXAS INSTRUMENTS INC

DIP, DIP16,.3

25 ns

70 °C

EAR99

8542.32.00.71

DUAL

THROUGH-HOLE

未说明

2.54 mm

not_compliant

未说明

R-PDIP-T16

不合格

COMMERCIAL

0.05 mA

0.01 A

存储器电路

TH50VSF0302BAXB
TH50VSF0302BAXB
Toshiba America Electronic Components 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

48

TOSHIBA CORP

BGA

LBGA, BGA48,6X8,40

100 ns

1048576 words

1000000

85 °C

-20 °C

PLASTIC/EPOXY

LBGA

BGA48,6X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

3 V

Obsolete

e0

EAR99

Tin/Lead (Sn/Pb)

SRAM IS ORGANISED AS 128K X 8

8542.32.00.71

BOTTOM

BALL

1

1 mm

unknown

48

R-PBGA-B48

不合格

3.6 V

OTHER

2.7 V

ASYNCHRONOUS

0.04 mA

1MX8

1.6 mm

8

0.00003 A

8388608 bit

存储器电路

FLASH+SRAM

12 mm

10 mm

S71WS256NC0BFWAP2
S71WS256NC0BFWAP2
Spansion 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

84

SPANSION INC

BGA

8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84

80 ns

3

16777216 words

16000000

85 °C

-25 °C

PLASTIC/EPOXY

TFBGA

BGA84,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8 V

Obsolete

e1

EAR99

锡银铜

PSRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE

8542.32.00.71

BOTTOM

BALL

260

1

0.8 mm

unknown

40

84

R-PBGA-B84

不合格

1.95 V

OTHER

1.7 V

ASYNCHRONOUS

0.054 mA

16MX16

1.2 mm

16

0.00007 A

268435456 bit

存储器电路

FLASH+PSRAM

11.6 mm

8 mm

S71PL129NB0HFW4B0
S71PL129NB0HFW4B0
Spansion 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

64

SPANSION INC

BGA

8 X 11.60 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-64

70 ns

3

8388608 words

8000000

85 °C

-25 °C

PLASTIC/EPOXY

TFBGA

BGA64,10X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3 V

Obsolete

e1

EAR99

锡银铜

8542.32.00.71

BOTTOM

BALL

260

1

0.8 mm

unknown

40

64

R-PBGA-B64

不合格

3.1 V

OTHER

2.7 V

ASYNCHRONOUS

8MX16

1.2 mm

16

134217728 bit

存储器电路

FLASH+PSRAM

11.6 mm

8 mm

TH50VSF3581AASB
TH50VSF3581AASB
Toshiba America Electronic Components 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

69

LFBGA, BGA69,10X12,32

90 ns

2097152 words

2000000

85 °C

-30 °C

PLASTIC/EPOXY

LFBGA

BGA69,10X12,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

3 V

Transferred

TOSHIBA CORP

BGA

e0

EAR99

锡铅

USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8

8542.32.00.71

BOTTOM

BALL

1

0.8 mm

unknown

69

R-PBGA-B69

不合格

3.3 V

OTHER

2.67 V

ASYNCHRONOUS

0.05 mA

2MX16

1.4 mm

16

33554432 bit

存储器电路

FLASH+SRAM

12 mm

9 mm

TC518128AFL-10
TC518128AFL-10
Toshiba America Electronic Components 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

32

131072 words

128000

70 °C

PLASTIC/EPOXY

SOP

RECTANGULAR

小概要

5 V

Obsolete

TOSHIBA CORP

SOIC

100 ns

CE/AUTO/SELF REFRESH

DUAL

鸥翼

1

1.27 mm

unknown

32

R-PDSO-G32

不合格

5.5 V

COMMERCIAL

4.5 V

1

ASYNCHRONOUS

128KX8

3-STATE

2.8 mm

8

1048576 bit

PARALLEL

PSEUDO STATIC RAM

YES

20.6 mm

8.8 mm

XC17S30VOG8C
XC17S30VOG8C
AMD Xilinx 数据表

702 In Stock

-

最小起订量: 1

最小包装量: 1

YES

8

TSOP2,

3

247968 words

247968

70 °C

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

5 V

Obsolete

XILINX INC

TSOP

e3

EAR99

Matte Tin (Sn)

8542.32.00.71

DUAL

鸥翼

260

1

1.27 mm

compliant

30

8

R-PDSO-G8

不合格

5.25 V

COMMERCIAL

4.75 V

SYNCHRONOUS

247968X1

1.2 mm

1

247968 bit

存储器电路

4.9 mm

3.9 mm

S72NS512PD0AHGL43
S72NS512PD0AHGL43
Spansion 数据表

N/A

-

最小起订量: 1

最小包装量: 1

,

Obsolete

SPANSION INC

EAR99

8542.32.00.71

260

unknown

40

PF38F5060M0Y0B0
PF38F5060M0Y0B0
Micron Technology Inc 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

105

MICRON TECHNOLOGY INC

BGA

TFBGA, BGA105,9X12,32

96 ns

33554432 words

32000000

85 °C

-30 °C

PLASTIC/EPOXY

TFBGA

BGA105,9X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8 V

Obsolete

EAR99

PSEUDO SRAM IS ORGANIZED AS 8M X 16

8542.32.00.71

BOTTOM

BALL

260

1

0.8 mm

compliant

30

105

R-PBGA-B105

不合格

2 V

OTHER

1.7 V

SYNCHRONOUS

32MX16

1.2 mm

16

0.00016 A

536870912 bit

存储器电路

FLASH+PSRAM

11 mm

9 mm

PF38F5060M0Y0B0
PF38F5060M0Y0B0
Numonyx Memory Solutions 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

105

NUMONYX

BGA

TFBGA, BGA105,9X12,32

96 ns

3

33554432 words

32000000

85 °C

-30 °C

PLASTIC/EPOXY

TFBGA

BGA105,9X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8 V

Transferred

e1

EAR99

锡银铜

PSEUDO SRAM IS ORGANIZED AS 8M X 16

8542.32.00.71

BOTTOM

BALL

1

0.8 mm

unknown

105

R-PBGA-B105

不合格

2 V

OTHER

1.7 V

SYNCHRONOUS

32MX16

1.2 mm

16

0.00016 A

536870912 bit

存储器电路

FLASH+PSRAM

11 mm

9 mm

W25X20CLSVIG
W25X20CLSVIG
Winbond 数据表

N/A

-

最小起订量: 1

最小包装量: 1

Buffer

8-VSOP

Serial (SPI, Dual SPI)

150mil

x1/x2

80/104MHz

2.3 ~ 3.6V

2Mb

-40~+85˚C

W25X40CLSVIG
W25X40CLSVIG
Winbond 数据表

N/A

-

最小起订量: 1

最小包装量: 1

Buffer

VSOP - 8

Serial (SPI, Dual SPI)

150mil

x1/x2

80/104MHz

2.3 ~ 3.6V

4Mb

-40~+85˚C

W29N01HVBINA
W29N01HVBINA
Winbond 数据表

N/A

-

最小起订量: 1

最小包装量: 1

VFBGA - 63

9X11mm2

40MHz

2.7 ~ 3.6V

1Gb

-40~+85˚C

W29N01HVBINF
W29N01HVBINF
Winbond 数据表

N/A

-

最小起订量: 1

最小包装量: 1

VFBGA - 63

9X11mm2

40MHz

2.7 ~ 3.6V

1Gb

-40~+85˚C

W29N01HVSINF
W29N01HVSINF
Winbond 数据表

N/A

-

最小起订量: 1

最小包装量: 1

TSOPI - 48

12X20mm2

40MHz

2.7 ~ 3.6V

1Gb

-40~+85˚C

W29N01HWBINF
W29N01HWBINF
Winbond 数据表

N/A

-

最小起订量: 1

最小包装量: 1

VFBGA - 63

9X11mm2

40MHz

1.7 ~ 1.95V

1Gb

-40~+85˚C

W29N01HZBINA
W29N01HZBINA
Winbond 数据表

N/A

-

最小起订量: 1

最小包装量: 1

VFBGA - 63

9X11mm2

40MHz

1.7 ~ 1.95V

1Gb

-40~+85˚C

W29N01HZSINF
W29N01HZSINF
Winbond 数据表

N/A

-

最小起订量: 1

最小包装量: 1

TSOPI - 48

12X20mm2

40MHz

1.7 ~ 1.95V

1Gb

-40~+85˚C