类别是'category.存储器' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 阀门数量 | 访问时间(最大) | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 宏细胞数 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | 顺序突发长度 | 交错突发长度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | FM25V02A-DGQ | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tube | 2002 | F-RAM™ | 活跃 | 3 (168 Hours) | 8 | EAR99 | 8542.32.00.71 | 2V~3.6V | DUAL | 未说明 | 1 | 3.3V | 0.95mm | 未说明 | R-PDSO-N8 | 3.6V | 2.7V | SPI, Serial | 256Kb 32K x 8 | SYNCHRONOUS | 40MHz | FRAM | SPI | 32KX8 | 8 | 262144 bit | 0.8mm | 4.5mm | 4mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1021BN-15ZSXE | Cypress Semiconductor Corp | 数据表 | 22 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~125°C TA | Tray | 2006 | e4 | yes | Obsolete | 3 (168 Hours) | 44 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.8mm | 30 | CY7C1021 | 44 | 5V | 5V | 1Mb 64K x 16 | 1 | 130mA | SRAM | Parallel | 3-STATE | 16 | 15ns | 16b | 1 Mb | COMMON | Asynchronous | 16b | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 71321SA55JG8 | Renesas Electronics America Inc. | 数据表 | 196 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 13 Weeks | 表面贴装 | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) | Volatile | Commercial grade | 0°C~70°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 4.5V~5.5V | IDT71321 | 16Kb 2K x 8 | 55ns | SRAM | Parallel | 55ns | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 23K256T-E/ST | Microchip Technology | 数据表 | 10000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.65mm | 40 | 23K256 | 8 | 不合格 | 3.3V | 3.6V | 2.7V | SPI, Serial | 256Kb 32K x 8 | 1 | 10mA | 20MHz | 32 ns | SRAM | SPI | 3-STATE | 8 | 1b | 256 kb | 0.000004A | SEPARATE | Synchronous | 8b | 2.7V | 4.4mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PZ28F064M29EWHA | Micron Technology Inc. | 数据表 | 317 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | Copper, Silver, Tin | 表面贴装 | 48-VFBGA | YES | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2012 | e1 | yes | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | 锡银铜 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 30 | PZ28F064 | 3/3.3V | 2.7V | 64Mb 8M x 8 4M x 16 | 0.025mA | FLASH | Parallel | 4MX16 | 16 | 60ns | 64 Mb | 0.00012A | 65 ns | 8 | YES | YES | YES | 128 | 64K | 8/16words | YES | YES | 1mm | 8mm | 6mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CAT25160YI-G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 20 Weeks | Gold | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 100 YEAR DATA RETENTION | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | CAT25160 | 8 | 5.5V | 2/5V | 2.5V | SPI, Serial | 16Kb 2K x 8 | 2mA | 20MHz | 40 ns | EEPROM | SPI | 8 | 5ms | 16 kb | 0.000002A | SPI | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1061GE30-10BV1XI | Cypress Semiconductor Corp | 数据表 | 17 In Stock | - | 最小起订量: 1 最小包装量: 1 | 13 Weeks | 表面贴装 | 48-VFBGA | YES | 48 | Volatile | -40°C~85°C TA | Tray | 2012 | 活跃 | 3 (168 Hours) | 48 | 3A991.B.2.A | 8542.32.00.41 | 2.2V~3.6V | BOTTOM | 未说明 | 1 | 3V | 0.75mm | 未说明 | 3.6V | 2.2V | 16Mb 1M x 16 | SRAM | Parallel | 1MX16 | 16 | 10ns | 16777216 bit | 10 ns | 1mm | 8mm | 6mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AS7C316098A-10BINTR | Alliance Memory, Inc. | 数据表 | 27 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 48-LFBGA | YES | 48 | Volatile | Industrial grade | -40°C~85°C TA | Tape & Reel (TR) | 2012 | 活跃 | 3 (168 Hours) | 48 | 3V~3.6V | BOTTOM | 1 | 3.3V | 0.75mm | 48 | 3.3V | 3.6V | 2.7V | 16Mb 1M x 16 | 1 | SRAM | Parallel | 16 | 10ns | 20b | 16 Mb | 8mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY62126EV30LL-55ZSXE | Cypress Semiconductor Corp | 数据表 | 7748 In Stock | - | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~125°C TA | Tube | 1998 | MoBL® | e4 | 活跃 | 3 (168 Hours) | 44 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.2V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 30 | CY62126 | 44 | 3V | 3.6V | 2.2V | 1Mb 64K x 16 | 1 | 35mA | SRAM | Parallel | 3-STATE | 16 | 55ns | 16b | 1 Mb | 0.00003A | 55 ns | COMMON | Asynchronous | 16b | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST39VF801C-70-4I-B3KE-T | Microchip Technology | 数据表 | 4639 In Stock | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 48-TFBGA | YES | 48 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | SST39 MPF™ | e1 | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.7V~3.6V | BOTTOM | 0.8mm | SST39VF801C | 3.3V | 8Mb 512K x 16 | 18mA | 70ns | FLASH | Parallel | 16b | 512KX16 | 16 | 10μs | 19b | 8 Mb | 0.00002A | Asynchronous | 16b | YES | YES | YES | 256 | 2K | YES | BOTTOM | YES | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AS7C1026B-20TCN | Alliance Memory, Inc. | 数据表 | 164 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44-TSOP2 | Volatile | 0°C~70°C TA | Tray | 1996 | 活跃 | 3 (168 Hours) | 70°C | 0°C | 4.5V~5.5V | 5V | Parallel | 5.5V | 4.5V | 1Mb 64K x 16 | 1 | 20ns | SRAM | Parallel | 20ns | 16b | 1 Mb | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1444AV33-167AXC | Cypress Semiconductor Corp | 数据表 | 22 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2004 | e4 | yes | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.A | Nickel/Palladium/Gold (Ni/Pd/Au) | PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 2.5V | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 20 | CY7C1444 | 100 | 3.3V | 3.6V | 3.135V | 36Mb 1M x 36 | 4 | 375mA | 167MHz | 3.4ns | SRAM | Parallel | 1MX36 | 3-STATE | 36 | 20b | 36 Mb | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1382DV33-167BZI | Cypress Semiconductor Corp | 数据表 | 22 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tube | 2004 | e0 | Obsolete | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | 流水线结构 | 3.135V~3.6V | BOTTOM | 220 | 1 | 3.3V | 1mm | 30 | CY7C1382 | 3.3V | 3.6V | 3.135V | 18Mb 1M x 18 | 2 | 275mA | 167MHz | 3.4ns | SRAM | Parallel | 1MX18 | 18 | 20b | 18 Mb | Synchronous | 18b | 1.4mm | 15mm | 无 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IS42SM16800H-75BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | 121 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 54-TFBGA | YES | Volatile | Industrial grade | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 54 | EAR99 | AUTO/SELF REFRESH | 2.7V~3.6V | BOTTOM | 1 | 3.3V | 0.8mm | S-PBGA-B54 | 3.6V | 2.7V | 128Mb 8M x 16 | 1 | SYNCHRONOUS | 133MHz | 6ns | DRAM | Parallel | 8MX16 | 16 | 134217728 bit | 1.2mm | 8mm | 8mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS43DR16640B-25DBLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | 3 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 84-TFBGA | YES | 84 | Volatile | Industrial grade | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 84 | 1.7V~1.9V | BOTTOM | 1.8V | 0.8mm | 不合格 | 1.8V | 1Gb 64M x 16 | 110mA | 400MHz | 400ps | DRAM | Parallel | 16b | 64MX16 | 3-STATE | 16 | 15ns | 0.015A | 1073741824 bit | COMMON | 8192 | 48 | 48 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C024AV-20AXI | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 100-LQFP | 100-TQFP (14x14) | Volatile | -40°C~85°C TA | Tray | Obsolete | 3 (168 Hours) | 3V~3.6V | 64Kb 4K x 16 | 20ns | SRAM | Parallel | 20ns | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DSM2190F4V-15T6 | STMicroelectronics | 数据表 | 2 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 52-QFP | YES | 52 | Non-Volatile | -40°C~85°C TA | Tray | e4 | Obsolete | 1 (Unlimited) | 52 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.71 | 3V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 150GHz | 未说明 | DSM2190 | 52 | 不合格 | 5.25V | 3.6V | 3V | 2Mb 256K x 8 | ASYNCHRONOUS | 150ns | FLASH | Parallel | 256KX8 | 8 | 3000 | 16 | 2.35mm | 10mm | 10mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
S29GL064N90TFI013 | Cypress Semiconductor Corp | 数据表 | 1695 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | Tin | 表面贴装 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | 56 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2003 | GL-N | e3 | 活跃 | 3 (168 Hours) | 56 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | 3.6V | 3/3.3V | 2.7V | 64Mb 8M x 8 4M x 16 | 50mA | FLASH | Parallel | 4MX16 | 16 | 90ns | 64 Mb | 0.000005A | 90 ns | Asynchronous | 3V | 8 | YES | YES | YES | 128 | 64K | 8/16words | YES | BOTTOM/TOP | YES | 1.2mm | 18.4mm | 14mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
BR93G86FVM-3AGTTR | ROHM Semiconductor | 数据表 | 50 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | Tin | 表面贴装 | 表面贴装 | 8-VSSOP, 8-MSOP (0.110, 2.80mm Width) | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2016 | 活跃 | 1 (Unlimited) | 8 | 1.7V~5.5V | DUAL | 0.635mm | BR93G86 | R-PDSO-G8 | 不合格 | 1.8/5V | Serial | 16Kb 1K x 16 | 3MHz | 200 ns | EEPROM | SPI | 1KX16 | 16 | 5ms | 16 kb | 0.000002A | 3-WIRE | 1000000 Write/Erase Cycles | 40 | SOFTWARE | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT25160A-10TQ-2.7 | Microchip | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT45DB321E-MWHF-T | Adesto Technologies | 数据表 | 5000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | Gold | 表面贴装 | 表面贴装 | 8-VDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 1997 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | 2.3V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 未说明 | 8 | 3.6V | 2.3V | SPI, Serial | 32Mb 528Bytes x 8192 pages | 22mA | 22mA | 85MHz | 7 ns | FLASH | SPI | 8b | 32MX1 | 1 | 8μs, 4ms | 22b | 32 Mb | Synchronous | 8b | 3V | 528B | 1mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS61LV12824-10BL | ISSI, Integrated Silicon Solution Inc | 数据表 | 77 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 119-BGA | YES | 119 | Volatile | 0°C~70°C TA | Tray | e1 | yes | 活跃 | 2 (1 Year) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 3.135V~3.6V | BOTTOM | 260 | 1 | 3.3V | 40 | 119 | 3.3V | 3.63V | 2.97V | 3Mb 128K x 24 | 1 | 180mA | SRAM | Parallel | 3-STATE | 10ns | 17b | 3 Mb | COMMON | Asynchronous | 24b | 3V | 22mm | 14mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CY7C1371D-133AXC | Cypress Semiconductor Corp | 数据表 | 212 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | 657.000198mg | Volatile | 0°C~70°C TA | Tray | 2004 | NoBL™ | e3 | yes | Obsolete | 3 (168 Hours) | 100 | SMD/SMT | 3A991.B.2.A | Matte Tin (Sn) | FLOW-THROUGH ARCHITECTURE | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 20 | CY7C1371 | 100 | 3.3V | 3.6V | 3.135V | 18Mb 512K x 36 | 4 | 210mA | 210mA | 133MHz | 6.5ns | SRAM | Parallel | 512KX36 | 3-STATE | 19b | 18 Mb | 0.07A | COMMON | Synchronous | 36b | 1.6mm | 20mm | 14mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71V016SA15PH | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44-TSOP II | Volatile | 0°C~70°C TA | Tube | Obsolete | 3 (168 Hours) | 3V~3.6V | IDT71V016 | 1Mb 64K x 16 | 15ns | SRAM | Parallel | 15ns | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IS61NLP51236B-200TQLI | ISSI, Integrated Silicon Solution Inc | 数据表 | 2 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 100-LQFP | YES | Volatile | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 100 | 3.135V~3.465V | QUAD | 未说明 | 1 | 3.3V | 0.65mm | 未说明 | R-PQFP-G100 | 3.465V | 3.135V | 18Mb 512K x 36 | 200MHz | 3ns | SRAM | Parallel | 512KX36 | 36 | 18874368 bit | 1.6mm | 20mm | 14mm | ROHS3 Compliant |
FM25V02A-DGQ
Cypress Semiconductor Corp
分类:Memory
CY7C1021BN-15ZSXE
Cypress Semiconductor Corp
分类:Memory
71321SA55JG8
Renesas Electronics America Inc.
分类:Memory
151.280899
23K256T-E/ST
Microchip Technology
分类:Memory
PZ28F064M29EWHA
Micron Technology Inc.
分类:Memory
CAT25160YI-G
ON Semiconductor
分类:Memory
CY7C1061GE30-10BV1XI
Cypress Semiconductor Corp
分类:Memory
AS7C316098A-10BINTR
Alliance Memory, Inc.
分类:Memory
CY62126EV30LL-55ZSXE
Cypress Semiconductor Corp
分类:Memory
SST39VF801C-70-4I-B3KE-T
Microchip Technology
分类:Memory
AS7C1026B-20TCN
Alliance Memory, Inc.
分类:Memory
CY7C1444AV33-167AXC
Cypress Semiconductor Corp
分类:Memory
CY7C1382DV33-167BZI
Cypress Semiconductor Corp
分类:Memory
IS42SM16800H-75BLI
ISSI, Integrated Silicon Solution Inc
分类:Memory
IS43DR16640B-25DBLI-TR
ISSI, Integrated Silicon Solution Inc
分类:Memory
CY7C024AV-20AXI
Rochester Electronics, LLC
分类:Memory
DSM2190F4V-15T6
STMicroelectronics
分类:Memory
S29GL064N90TFI013
Cypress Semiconductor Corp
分类:Memory
BR93G86FVM-3AGTTR
ROHM Semiconductor
分类:Memory
AT25160A-10TQ-2.7
Microchip
分类:Memory
AT45DB321E-MWHF-T
Adesto Technologies
分类:Memory
IS61LV12824-10BL
ISSI, Integrated Silicon Solution Inc
分类:Memory
CY7C1371D-133AXC
Cypress Semiconductor Corp
分类:Memory
IDT71V016SA15PH
Renesas Electronics America Inc.
分类:Memory
IS61NLP51236B-200TQLI
ISSI, Integrated Silicon Solution Inc
分类:Memory
