类别是'category.内存模块' (5401)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 包装/外壳 | 表面安装 | 材料 | Housing material | 终端数量 | Additional functions | Additionally | Alternating current voltage | Case | Date Of Intro | Dielectric strength | Dimension X | Dimension Y | Dimension Z | Electrical mounting | Enclosure description | Enclosure series | Enclosures application | Gate current | Glue stick diameter mm | Gross weight | Head and button shape | Heating time | Illuation color | Illumination voltage | Indicator type | LED lifespan | Max. forward impulse current | Max. forward voltage | Max. off-state voltage | Mechanical mounting | 厂商 | Mounting diameter | Noal voltage | Nominal load current | Nominal load power | Number of switching cycles (electrical) | Relative humidity | Ripple level | Semiconductor structure | Shrinkage diameter after | Shrinkage diameter before | Shrinkage temperature | Switching cycles (electrical) | Switching scheme | Thickness after shrinkage | Transport package size/quantity | Transport packaging size / quantity | Transport packaging size/quantity | Type of enclosure | Type of module | Useful height (B) | 包装 | 系列 | JESD-609代码 | 无铅代码 | ECCN 代码 | 温度系数 | Connector type | 类型 | 电阻 | 端子表面处理 | 颜色 | 附加功能 | HTS代码 | 子类别 | 额定功率 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | 深度 | 电阻器类型 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 引脚数量 | JESD-30代码 | 资历状况 | 效率 | 电源电压-最大值(Vsup) | Contact resistance | 温度等级 | 电源电压-最小值(Vsup) | Insulation resistance | 界面 | 内存大小 | 操作模式 | 程序内存大小 | 电源电流-最大值 | Switch type | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 产品类别 | Operating temperature range | 待机电流-最大值 | Rated current | 记忆密度 | 筛选水平 | 并行/串行 | I/O类型 | 内存IC类型 | 编程电压 | Shrinkage ratio | 电阻公差 | 串行总线类型 | Load current | 耐力 | 写入周期时间 - 最大值 | 电源 | 数据保持时间 | 写入保护 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | 饱和电流 | 特征 | Operating voltage | Power supply type | 产品类别 | 触点 | 产品长度 | IP rating | 直径 | 高度 | 长度 | 宽度 | 器件厚度 | ||||||||||||||||||||||||||||||
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![]() | TMM24512F | Toshiba America Electronic Components | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | 65536 words | 64000 | 70 °C | PLASTIC/EPOXY | SOP | SOP28,.5 | RECTANGULAR | 小概要 | 5 V | 无 | 活跃 | TOSHIBA CORP | SOP, SOP28,.5 | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | DUAL | 鸥翼 | 1.27 mm | unknown | R-PDSO-G28 | 不合格 | COMMERCIAL | 64KX8 | 3-STATE | 8 | 524288 bit | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S29GL512N90TFI020 | AMD | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 56 | 90 ns | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP56,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 有 | Transferred | ADVANCED MICRO DEVICES INC | TSSOP, TSSOP56,.8,20 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 鸥翼 | 0.5 mm | unknown | R-PDSO-G56 | 不合格 | INDUSTRIAL | 0.07 mA | 32MX16 | 16 | 0.000005 A | 536870912 bit | PARALLEL | FLASH | 8 | YES | YES | YES | 512 | 128K | 8/16 words | YES | YES | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | EN25S32A-104RIP2S | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 8 | VSOP-8 | 104 MHz | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VSOP | SOP8,.25 | SQUARE | SMALL OUTLINE, VERY THIN PROFILE | 1.8 V | 有 | 接触制造商 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 鸥翼 | 未说明 | 1 | 1.27 mm | unknown | 未说明 | S-PDSO-G8 | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 0.03 mA | 4MX8 | 3-STATE | 1 mm | 8 | 0.00001 A | 33554432 bit | SERIAL | FLASH | 1.8 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 5.28 mm | 5.28 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AM27S43DMB | AMD | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 24 | DIP, DIP24,.6 | 30 ns | 4096 words | 2000 | 125 °C | -55 °C | CERAMIC | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | 5 V | 无 | Obsolete | ADVANCED MICRO DEVICES INC | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | compliant | R-XDIP-T24 | 不合格 | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.185 mA | 2KX8 | 8 | 16384 bit | MIL-STD-883 Class B (Modified) | PARALLEL | OTP ROM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PM25LD256C-DCE | Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 8 | 32768 words | 32000 | 105 °C | -40 °C | PLASTIC/EPOXY | HTSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH | 活跃 | INTEGRATED SILICON SOLUTION INC | HTSSOP, TSSOP8,.25 | 100 MHz | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 0.65 mm | compliant | R-PDSO-G8 | 不合格 | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.003 mA | 32KX8 | 1.2 mm | 8 | 0.00001 A | 262144 bit | SERIAL | FLASH | 2.7 V | SPI | 200000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 4.4 mm | 3 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SFUI4096K1AB1TO-I-GS-2AP-STD | Swissbit | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Module | Tray | Swissbit | - | Obsolete | FLASH - NAND (MLC) | U-45 | 100.0000 ppm/°C | 909 Ohm | 0.5 W | Industrial | 4GB | 1 | 6.1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SQR-SD3I2G1K6INCCE | Advantech | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 204-SODIMM | Advantech | Advantech Corp | Bulk | 1333 | 活跃 | DDR3 SDRAM | 1 | Advantech | SQR-SD3I | Memory & Data Storage | CAN/SCI/SPI | 2GB | 128 KB | 16 Bit | 内存模块 | 内存模块 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | EN25QH64-104HIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 8 | 104 MHz | 8388608 words | 7.85 | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SQUARE | 小概要 | 3 V | 有 | 生命周期结束 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | 42*28*23.5/2000 | SOP, | EAR99 | 8542.32.00.51 | DUAL | 鸥翼 | 未说明 | 1 | 1.27 mm | unknown | 未说明 | S-PDSO-G8 | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 8MX8 | 2.2 mm | 8 | 67108864 bit | SERIAL | FLASH | 2.7 V | 5.275 mm | 5.275 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AM29F032B-75EC | Spansion | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 40 | overload protection, load turn-on delay of at least 30 ms | 90-132/180-264 (AC), 50 Hz V | 1500 (50 Hz, 1 min.) V | SPANSION INC | TSOP1 | 836.00 | MO-142CD, TSOP-40 | 70 ns | 4194304 words | 4000000 | 10 A | 240 W | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP40,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 5 V | load +24 (DC) with ±10 % regulation V | switch-on pulse - 25 A (115 V); 50 A (230 V) A | 无 | 150 mV | 53.5*33.5*26/25 | Obsolete | e0 | 无 | 3A991.B.1.A | screw terminals | NOR型号 | 锡铅 | 8542.32.00.51 | DUAL | 鸥翼 | 260 | 1 | 0.5 mm | 215 mm | not_compliant | 40 | R-PDSO-G40 | 不合格 | 81.5 % | 5.25 V | COMMERCIAL | 4.75 V | ≥100 (at Uins.dc=500 V) MΩ | ASYNCHRONOUS | 0.06 mA | 4MX8 | 1.2 mm | 8 | -10…+50 °C | 0.000005 A | 33554432 bit | PARALLEL | FLASH | 5 V | YES | YES | YES | 64 | 64K | YES | 3 | built-in fan | SKS series switching power supply | 50 mm | 18.4 mm | 10 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | F59L1G81LA-25TIG2Y | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 48 | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 3.3 V | 活跃 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TSOP1, | 134217728 words | EAR99 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 0.5 mm | unknown | R-PDSO-G48 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 128MX8 | 1.2 mm | 8 | 1073741824 bit | PARALLEL | FLASH | 3.3 V | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST49LF020A-33-4C-NHE | Silicon Storage Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | QFJ | ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32 | 120 ns | 262144 words | 256000 | 85 °C | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | 3.3 V | 有 | Transferred | SILICON STORAGE TECHNOLOGY INC | e3 | EAR99 | NOR型号 | 哑光锡 | 8542.32.00.51 | QUAD | J BEND | 260 | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | 不合格 | 3.6 V | OTHER | 3 V | ASYNCHRONOUS | 0.024 mA | 256KX8 | 3.556 mm | 8 | 0.0001 A | 2097152 bit | PARALLEL | FLASH | 3 V | YES | YES | YES | 64 | 4K | TOP | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M29DW127G70NF6E | Numonyx Memory Solutions | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 64 | SEMIPACK3 | screw | 70 ns | 8388608 words | 150mA | 410 g | 8000000 | 85 °C | 9.5kA | 1.45V | 1.8kV | -40 °C | screw | PLASTIC/EPOXY | BGA | BGA64,8X8,40 | SQUARE | 网格排列 | 有 | Transferred | NUMONYX | double series | BGA, BGA64,8X8,40 | diode-thyristor | EAR99 | NOR型号 | 8542.32.00.51 | BOTTOM | BALL | 1 mm | unknown | S-PBGA-B64 | 不合格 | INDUSTRIAL | 0.015 mA | 8MX16 | 16 | 0.0001 A | 134217728 bit | PARALLEL | FLASH | 320A | 8 | YES | YES | YES | 8,62 | 64K,256K | 8/16 words | YES | BOTTOM/TOP | YES | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NAND512W3A2DZA6E | Numonyx Memory Solutions | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 63 | 54.6mm | 85mm | 38.6mm | -40 °C | EMI/RFI shielding, | PLASTIC/EPOXY | AW | designed for electronic circuits sensitive to electromagnetic interferences | TFBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 12000 ns | 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63 | BGA | NUMONYX | Obsolete | 有 | See | with fixing lugs | aluminium | 3 V | 67108864 words | 64000000 | 85 °C | shielding | 有 | EAR99 | SLC NAND类型 | 8542.32.00.51 | BOTTOM | BALL | 未说明 | 1 | 0.8 mm | unknown | 未说明 | 63 | R-PBGA-B63 | 不合格 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 64MX8 | 1.05 mm | 8 | 0.00005 A | 536870912 bit | PARALLEL | FLASH | 3 V | NO | NO | YES | 4K | 16K | 512 words | YES | IP68 | 11 mm | 9 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT45DB021E-SSHN-T | Atmel Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 8 | 70 MHz | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | RECTANGULAR | 小概要 | 1.8 V | Transferred | ATMEL CORP | SOIC | 0.150 INCH, GREEN, PLASTIC, MS-012AA, SOIC-8 | e4 | EAR99 | NOR型号 | 镍钯金 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | 3.6 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 2MX1 | 1.75 mm | 1 | 2097152 bit | SERIAL | FLASH | 2.7 V | 4.925 mm | 3.9 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT45DB041E-SSHN-T | Atmel Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 8 | SOIC | 0.150 INCH, GREEN, PLASTIC, MS-012AA, SOIC-8 | 70 MHz | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | 小概要 | 3 V | 有 | Transferred | ATMEL CORP | e4 | EAR99 | NOR型号 | 镍钯金 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | 不合格 | 3.6 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 0.026 mA | 4MX1 | 1.75 mm | 1 | 0.00001 A | 4194304 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 4.925 mm | 3.9 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M29W128GL70ZA6E | Numonyx Memory Solutions | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 64 | BGA | TBGA, BGA64,8X8,40 | 70 ns | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TBGA | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | 3 V | 有 | Transferred | NUMONYX | EAR99 | NOR型号 | 8542.32.00.51 | BOTTOM | BALL | 未说明 | 1 | 1 mm | unknown | 未说明 | 64 | R-PBGA-B64 | 不合格 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 8MX16 | 1.2 mm | 16 | 0.0001 A | 134217728 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 128 | 128K | 8/16 words | YES | YES | 13 mm | 10 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT45DB321E-MHF-Y | Dialog Semiconductor GmbH | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | Polyolefin | 8 | 33554432 words | 32000000 | 8.80 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 3 V | 有 | Transferred | DIALOG SEMICONDUCTOR GMBH | 3.0 mm | 6.0 mm | +80...+120 °C | 0.53 mm | 70 MHz | 105*20*16/500 | e4 | Трубка термоусадочная неподдерживающая горение | 镍钯金 | Blue | DUAL | 无铅 | 1 | 1.27 mm | compliant | R-PDSO-N8 | 不合格 | 3.6 V | INDUSTRIAL | 2.3 V | SYNCHRONOUS | 0.022 mA | 32MX1 | 0.6 mm | 1 | -55...+125 °C | 0.000001 A | 33554432 bit | SERIAL | FLASH | 2.7 V | 2 : 1 | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 600 V | 1 m | 5 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | M29F400FB55N3E2 | Numonyx Memory Solutions | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 48 | TSOP1 | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP1-48 | 55 ns | 262144 words | 256000 | 125 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 5 V | 有 | Transferred | NUMONYX | EAR99 | NOR型号 | 底部启动区块 | 8542.32.00.51 | DUAL | 鸥翼 | 未说明 | 1 | 0.5 mm | unknown | 未说明 | 48 | R-PDSO-G48 | 不合格 | 5.5 V | AUTOMOTIVE | 4.5 V | ASYNCHRONOUS | 0.03 mA | 256KX16 | 1.2 mm | 16 | 0.00012 A | 4194304 bit | AEC-Q100 | PARALLEL | FLASH | 5 V | 8 | YES | YES | YES | 1,2,1,7 | 16K,8K,32K,64K | YES | BOTTOM | YES | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NAND01GW3B2CZA6 | Numonyx Memory Solutions | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 63 | 35 ns | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 3 V | Transferred | NUMONYX | BGA | TFBGA, | e0 | EAR99 | 锡铅 | 8542.32.00.51 | BOTTOM | BALL | 未说明 | 1 | 0.8 mm | unknown | 未说明 | 63 | R-PBGA-B63 | 不合格 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 128MX8 | 1.05 mm | 8 | 1073741824 bit | PARALLEL | FLASH | 3 V | 12 mm | 9.5 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | F50L1G41LB-104YG2M | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 8 | 2017-08-18 | 134217728 words | 128000000 | 11 | 285.00 | 1…3 min | 70 °C | UNSPECIFIED | HVSON | SOLCC8,.3 | 220V, 50Hzmin | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 3.3 V | 接触制造商 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | , | 104 MHz | 48*31.5*27/20 | Blister | EAR99 | SLC NAND类型 | 8542.32.00.51 | DUAL | 无铅 | 未说明 | 1 | 1.27 mm | unknown | 未说明 | R-XDSO-N8 | 3.6 V | 2.7 V | SYNCHRONOUS | 0.02 mA | 128MX8 | 3-STATE | 0.8 mm | 8 | 0.00005 A | 1073741824 bit | SERIAL | FLASH | 3.3 V | SPI | 100000 Write/Erase Cycles | 100W | 10 | HARDWARE/SOFTWARE | 1 | 8 mm | 6 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | EN25QH16A-104GIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | nickel-plated brass | 8 | 2000 (50 Hz / 5 s) V | 2097152 words | 2000000 | 33.40 | ring - cone; key cover | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | 19 mm | RECTANGULAR | 小概要 | 3 V | IP65 | 250 V | Obsolete | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | SOP, | 45...85 % | ≥50000 | ON-ON - 2 positions with 1NO1NC fixation | 104 MHz | 62*27.5*28/200 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 鸥翼 | 未说明 | 1 | 1.27 mm | unknown | 未说明 | R-PDSO-G8 | 3.6 V | ≤50 mΩ | INDUSTRIAL | 2.7 V | ≥1000 MΩ | SYNCHRONOUS | LAS1 AGQ-Y series vandal-resistant key switch | 2MX8 | 1.75 mm | 8 | -25…+55 °C | 5 A | 16777216 bit | SERIAL | FLASH | 2.7 V | BOTTOM/TOP | 3Pin | 22 mm | 4.9 mm | 3.9 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT45DB021E-SHN-T | Atmel Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | nickel-plated brass | 8 | 2000 (50 Hz / 5 s) V | ATMEL CORP | SOIC | 0.208 INCH, GREEN, PLASTIC, EIAJ, SOIC-8 | 21.20 | ring - cone; flat button | 70 MHz | greemin | 12 V | "ON" pictogram | ≥40000 hours | 2097152 words | 2000000 | 85 °C | 19 mm | -40 °C | ≥50000 | PLASTIC/EPOXY | SOP | RECTANGULAR | 小概要 | 1.8 V | IP65 | 250 V | 有 | Transferred | 45...85 % | ON-(ON) without locking | 27.5*27*19/100 | e4 | EAR99 | NOR型号 | 镍钯金 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | 3.6 V | ≤50 mΩ | INDUSTRIAL | 1.65 V | ≥1000 MΩ | SYNCHRONOUS | Vandal resistant pushbutton switch LAS1-AGQ series with illumination | 2MX1 | 2.16 mm | 1 | -25…+55 °C | 5 A | 2097152 bit | SERIAL | FLASH | 2.7 V | 3Pin+2Pin | 22 mm | 5.29 mm | 5.24 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT25SF321-SHD-T | Dialog Semiconductor GmbH | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 有 | Transferred | DIALOG SEMICONDUCTOR GMBH | compliant | FLASH | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | THGBMNG5D1LBAIT | Toshiba America Electronic Components | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | polyethylene | 153 | with a red stripe | 2019-01-21 | 1.25 | -25 °C | PLASTIC/EPOXY | BGA | RECTANGULAR | 网格排列 | Transferred | TOSHIBA CORP | WFBGA-153 | 4294967296 words | 4000000000 | 48*31.5*22/15000 | 100 mm | 85 °C | EAR99 | PE bag with zip lock | transparent | 8542.32.00.51 | BOTTOM | BALL | 1 | unknown | R-PBGA-B153 | 3.6 V | OTHER | 2.7 V | ASYNCHRONOUS | 4GX8 | 8 | 34359738368 bit | SERIAL | FLASH | 2.7 V | zip-lock | 100 mm | 45 μm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | S29AL032D90TFI040 | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 48 | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 3 V | 不推荐 | INFINEON TECHNOLOGIES AG | TSOP-48 | 90 ns | NOR型号 | DUAL | 鸥翼 | 1 | 0.5 mm | compliant | R-PDSO-G48 | 3.6 V | 2.7 V | ASYNCHRONOUS | 0.035 mA | 2MX16 | 3-STATE | 1.2 mm | 16 | 0.000005 A | 33554432 bit | PARALLEL | FLASH | 3 V | 1000000 Write/Erase Cycles | 0.00009 ms | 20 | 8 | YES | YES | YES | 8,63 | 8K,64K | YES | BOTTOM | YES | 18.4 mm | 12 mm |
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