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23A512-I/SN备选型号: IS63WV1288DBLL-10TLI

23A512-I/SN

Microchip Technology

512K, 1.8V Spi Serial SRAM, Sqi, 8 SOIC .150IN Tube

6 Weeks
表面贴装
8-SOIC (0.154, 3.90mm Width)
YES
Volatile
-40°C~85°C TA
Tube
2012
e3
活跃
1 (Unlimited)
8
Matte Tin (Sn) - annealed
1.7V~2.2V
DUAL
260
1
1.27mm
40
23A512
R-PDSO-G8
不合格
2.2V
1.8/2V
1.7V
SPI, Serial
512Kb 64K x 8
1, (3 LINE)
SYNCHRONOUS
20MHz
SRAM
SPI - Quad I/O
64KX8
8
0.000004A
524288 bit
TS 16949
SEPARATE
1.7V
4.9mm
1.75mm
3.9mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
IS63WV1288DBLL-10TLI

ISSI, Integrated Silicon Solution Inc

SRAM Chip Async Single 2.5V/3.3V 1M-Bit 128K x 8 10ns 32-Pin TSOP-II

8 Weeks
表面贴装
32-SOIC (0.400, 10.16mm Width)
YES
Volatile
-40°C~85°C TA
Tray
-
e3
活跃
3 (168 Hours)
32
Matte Tin (Sn)
2.4V~3.6V
DUAL
260
1
-
40
-
-
-
3.6V
2.5/3.3V
2.4V
-
1Mb 128K x 8
1
-
-
SRAM
Parallel
-
8
0.000055A
-
-
COMMON
2V
20.95mm
-
-
ROHS3 Compliant
32
yes
32
55mA
3-STATE
10ns
17b
1 Mb
Asynchronous
8b
无
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	IS63WV1288DBLL-10TLI	ISSI, Integrated Silicon Solution Inc	存储器	32-SOIC (0.400, 10.16mm Width)	SRAM Chip Async Single 2.5V/3.3V 1M-Bit 128K x 8 10ns 32-Pin TSOP-II	对比