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23LC1024-E/SN备选型号: IS63WV1288DBLL-10TLI

23LC1024-E/SN

Microchip Technology

IC SRAM 1M SPI 16MHZ 8SOIC

6 Weeks
表面贴装
8-SOIC (0.154, 3.90mm Width)
YES
Volatile
-40°C~125°C TA
Tube
2012
e3
活跃
1 (Unlimited)
8
Matte Tin (Sn) - annealed
2.5V~5.5V
DUAL
260
1
1.27mm
40
23LC1024
R-PDSO-G8
不合格
5.5V
3/5V
2.5V
1Mb 128K x 8
SYNCHRONOUS
16MHz
SRAM
SPI - Quad I/O
128KX8
3-STATE
8
0.000012A
1048576 bit
32 ns
SERIAL
COMMON/SEPARATE
2.5V
NO
NO
4.9mm
1.75mm
3.9mm
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
IS63WV1288DBLL-10TLI

ISSI, Integrated Silicon Solution Inc

SRAM Chip Async Single 2.5V/3.3V 1M-Bit 128K x 8 10ns 32-Pin TSOP-II

8 Weeks
表面贴装
32-SOIC (0.400, 10.16mm Width)
YES
Volatile
-40°C~85°C TA
Tray
-
e3
活跃
3 (168 Hours)
32
Matte Tin (Sn)
2.4V~3.6V
DUAL
260
1
-
40
-
-
-
3.6V
2.5/3.3V
2.4V
1Mb 128K x 8
-
-
SRAM
Parallel
-
3-STATE
8
0.000055A
-
-
-
COMMON
2V
-
-
20.95mm
-
-
ROHS3 Compliant
-
32
yes
32
1
55mA
10ns
17b
1 Mb
Asynchronous
8b
无
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	CY62128ELL-45SXI	Cypress Semiconductor Corp	存储器	32-SOIC (0.445, 11.30mm Width)	CYPRESS SEMICONDUCTOR CY62128ELL-45SXI. IC, SRAM, 1MBIT, PARALLEL, 45NS, SOIC-32	对比
	IS63WV1288DBLL-10TLI	ISSI, Integrated Silicon Solution Inc	存储器	32-SOIC (0.400, 10.16mm Width)	SRAM Chip Async Single 2.5V/3.3V 1M-Bit 128K x 8 10ns 32-Pin TSOP-II	对比
	AS6C62256-55SINTR	Alliance Memory, Inc.	存储器	28-SOIC (0.330, 8.38mm Width)	SRAM 256K, 2.7-5.5V, 55ns 32K x 8 Asynch SRAM	对比