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23LC512-E/SN备选型号: AS62V256A-70SIN

23LC512-E/SN

Microchip Technology

IC SRAM 512K SPI 16MHZ 8SOIC

19 Weeks
表面贴装
8-SOIC (0.154, 3.90mm Width)
YES
Volatile
-40°C~125°C TA
Tube
2012
e3
活跃
1 (Unlimited)
8
Matte Tin (Sn) - annealed
2.5V~5.5V
DUAL
260
1
5V
1.27mm
40
23LC512
R-PDSO-G8
5.5V
2.5V
512Kb 64K x 8
SYNCHRONOUS
16MHz
SRAM
SPI - Quad I/O
64KX8
8
524288 bit
TS 16949
SERIAL
4.9mm
1.75mm
3.9mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
AS62V256A-70SIN

Alliance Memory, Inc.

IC SRAM 256K PARALLEL 28SOP

6 Weeks
表面贴装
28-SOIC (0.330, 8.38mm Width)
YES
Volatile
-40°C~85°C TA
Tube
2012
e3/e6
活跃
3 (168 Hours)
28
PURE MATTE TIN/TIN BISMUTH
2.5V~3.6V
DUAL
260
1
3.3V
1.27mm
40
-
R-PDSO-G28
3.6V
2.5V
256Kb 32K x 8
-
-
SRAM
Parallel
32KX8
8
262144 bit
-
-
-
-
-
ROHS3 Compliant
yes
ALSO OPERATES AT MIN 2.7 V
28
不合格
3/3.3V
3-STATE
70ns
0.000005A
70 ns
COMMON
2V
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	AS62V256A-70SIN	Alliance Memory, Inc.	存储器	28-SOIC (0.330, 8.38mm Width)	IC SRAM 256K PARALLEL 28SOP	对比
	IS63WV1288DBLL-10TLI	ISSI, Integrated Silicon Solution Inc	存储器	32-SOIC (0.400, 10.16mm Width)	SRAM Chip Async Single 2.5V/3.3V 1M-Bit 128K x 8 10ns 32-Pin TSOP-II	对比
	IS63WV1288DBLL-10TLI-TR	ISSI, Integrated Silicon Solution Inc	存储器	32-SOIC (0.400, 10.16mm Width)	SRAM 1M (128Kx8) 10ns Async SRAM 3.3v	对比