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23LC512T-I/ST备选型号: AS6C62256-55STIN

23LC512T-I/ST

Microchip Technology

IC SRAM 512KBIT 20MHZ 8TSSOP

5 Weeks
表面贴装
8-TSSOP (0.173, 4.40mm Width)
YES
Volatile
-40°C~85°C TA
Tape & Reel (TR)
2010
e3
活跃
1 (Unlimited)
8
Matte Tin (Sn) - annealed
2.5V~5.5V
DUAL
260
1
5V
0.65mm
40
23LC512
R-PDSO-G8
不合格
5.5V
3/5V
2.5V
SPI, Serial
512Kb 64K x 8
1, (3 LINE)
SYNCHRONOUS
20MHz
SRAM
SPI - Quad I/O
64KX8
8
0.000004A
524288 bit
TS 16949
SEPARATE
2.5V
4.4mm
1.2mm
3mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
AS6C62256-55STIN

Alliance Memory, Inc.

SRAM 256K, 2.7-5.5V, 55ns 32K x 8 Asynch SRAM

8 Weeks
表面贴装
28-TSSOP (0.465, 11.80mm Width)
YES
Volatile
-40°C~85°C TA
Tray
2005
e3/e6
活跃
3 (168 Hours)
28
MATTE TIN/TIN BISMUTH
2.7V~5.5V
DUAL
260
1
3.3V
0.5mm
40
-
-
-
5.5V
3/5V
2.7V
-
256Kb 32K x 8
1
-
-
SRAM
Parallel
32KX8
8
0.00002A
-
-
COMMON
2V
-
-
-
ROHS3 Compliant
28
yes
EAR99
28
3.3V
3-STATE
55ns
15b
256 kb
55 ns
YES
无
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	AS6C62256-55STIN	Alliance Memory, Inc.	存储器	28-TSSOP (0.465, 11.80mm Width)	SRAM 256K, 2.7-5.5V, 55ns 32K x 8 Asynch SRAM	对比
	AS6C62256-55STCN	Alliance Memory, Inc.	存储器	28-TSSOP (0.465, 11.80mm Width)	SRAM 256K, 2.7-5.5V, 55ns 32K x 8 Asynch SRAM	对比
	IS61C256AL-12TLI-TR	ISSI, Integrated Silicon Solution Inc	存储器	28-TSSOP (0.465, 11.80mm Width)	SRAM Chip Async Single 5V 256K-Bit 32K x 8 12ns 28-Pin TSOP-I T/R	对比