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71256L20YGI8备选型号: 71256SA20YG

71256L20YGI8

Integrated Device Technology (IDT)

SRAM Chip Async Single 5V 256K-Bit 32K x 8 20ns 28-Pin SOJ T/R

7 Weeks
YES
28
RAM, SDR, SRAM - Asynchronous
2011
e3
yes
活跃
3 (168 Hours)
28
Matte Tin (Sn)
85°C
-40°C
5V
DUAL
J BEND
260
1
5V
INDUSTRIAL
Parallel
32kB
1
20 ns
32KX8
3-STATE
15b
256 kb
COMMON
2V
5.5V
4.5V
17.9mm
3.556mm
7.6mm
2.67mm
无
符合RoHS标准
无铅
-
-
-
-
-
71256SA20YG

Integrated Device Technology (IDT)

SRAM 32Kx8 ASYNCHRONOUS 5.0V STATIC RAM

12 Weeks
-
28
RAM, SDR, SRAM - Asynchronous
2011
e3
yes
活跃
3 (168 Hours)
28
Matte Tin (Sn) - annealed
70°C
0°C
5V
DUAL
J BEND
260
1
5V
COMMERCIAL
Parallel
32kB
1
20 ns
32KX8
3-STATE
15b
256 kb
COMMON
-
5.5V
4.5V
17.9mm
3.556mm
7.6mm
2.67mm
无
符合RoHS标准
无铅
表面贴装
145mA
EAR99
Asynchronous
8b
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图片	产品型号	品牌	分类	封装	描述	对比
	71256SA20YG	Integrated Device Technology (IDT)	存储器		SRAM 32Kx8 ASYNCHRONOUS 5.0V STATIC RAM	对比
	71256SA20YG8	Integrated Device Technology (IDT)	存储器		SRAM Chip Async Single 5V 256K-Bit 32K x 8 20ns 28-Pin SOJ T/R	对比
	71256SA20TPGI	Integrated Device Technology (IDT)	存储器	PDIP	SRAM Chip Async Single 5V 256K-Bit 32K x 8 20ns 28-Pin PDIP Tube/Tray	对比