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7134LA35CB备选型号: 7134SA35CB

7134LA35CB

Integrated Device Technology (IDT)

SRAM Chip Async Dual 5V 32K-Bit 4K x 8 35ns 48-Pin SBCDIP Tube

10 Weeks
通孔
DIP
48
RAM, SRAM
Bulk
2013
e0
no
活跃
1 (Unlimited)
48
Tin/Lead (Sn/Pb)
125°C
-55°C
AUTOMATIC POWER-DOWN; BATTERY BACKUP
DUAL
240
1
5V
48
5V
5V
MILITARY
Parallel
5.5V
4.5V
2
250mA
35 ns
4KX8
3-STATE
24b
32 kb
0.004A
38535Q/M;38534H;883B
COMMON
Asynchronous
8b
2V
61.72mm
15.24mm
3.3mm
无
符合RoHS标准
含铅
-
7134SA35CB

Integrated Device Technology (IDT)

SRAM Chip Async Dual 5V 32K-Bit 4K x 8 35ns 48-Pin SBCDIP Tube

10 Weeks
通孔
DIP
48
RAM, SDR, SRAM
Bulk
2005
-
-
活跃
-
-
-
125°C
-55°C
-
-
-
-
-
-
5V
-
-
Parallel
5.5V
4.5V
2
300mA
35 ns
-
-
24b
32 kb
-
-
-
Asynchronous
8b
-
61.72mm
15.24mm
3.3mm
无
符合RoHS标准
含铅
4kB
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图片	产品型号	品牌	分类	封装	描述	对比
	7134SA45CB	Integrated Device Technology (IDT)	存储器	DIP	SRAM Chip Async Dual 5V 32K-Bit 4K x 8 45ns 48-Pin SBCDIP Tube	对比
	7134SA35CB	Integrated Device Technology (IDT)	存储器	DIP	SRAM Chip Async Dual 5V 32K-Bit 4K x 8 35ns 48-Pin SBCDIP Tube	对比