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7134LA35FB备选型号: 7134LA35CB

7134LA35FB

Integrated Device Technology (IDT)

SRAM Chip Async Dual 5V 32K-Bit 4K x 8 35ns 48-Pin CFPAK Tray

10 Weeks
表面贴装
48
RAM, SRAM
Bulk
2005
活跃
125°C
-55°C
5V
Parallel
5.5V
4.5V
2
250mA
35 ns
24b
32 kb
Asynchronous
8b
19mm
19mm
2.2mm
无
符合RoHS标准
含铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
7134LA35CB

Integrated Device Technology (IDT)

SRAM Chip Async Dual 5V 32K-Bit 4K x 8 35ns 48-Pin SBCDIP Tube

10 Weeks
通孔
48
RAM, SRAM
Bulk
2013
活跃
125°C
-55°C
5V
Parallel
5.5V
4.5V
2
250mA
35 ns
24b
32 kb
Asynchronous
8b
61.72mm
15.24mm
3.3mm
无
符合RoHS标准
含铅
DIP
e0
no
1 (Unlimited)
48
Tin/Lead (Sn/Pb)
AUTOMATIC POWER-DOWN; BATTERY BACKUP
DUAL
240
1
5V
48
5V
MILITARY
4KX8
3-STATE
0.004A
38535Q/M;38534H;883B
COMMON
2V
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	7134LA35L48B	Integrated Device Technology (IDT)	存储器	LCC	SRAM Chip Async Dual 5V 32K-Bit 4K x 8 35ns 48-Pin LCC Tube	对比
	7134LA35CB	Integrated Device Technology (IDT)	存储器	DIP	SRAM Chip Async Dual 5V 32K-Bit 4K x 8 35ns 48-Pin SBCDIP Tube	对比