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7164S20YGI8备选型号: 7164L20YG

7164S20YGI8

Integrated Device Technology (IDT)

SRAM Chip Async Single 5V 64K-Bit 8K x 8 20ns 28-Pin SOJ T/R

7 Weeks
YES
28
RAM, SDR, SRAM - Asynchronous
2009
e3
yes
活跃
3 (168 Hours)
28
EAR99
Matte Tin (Sn) - annealed
85°C
-40°C
DUAL
J BEND
260
1
5V
28
5V
5V
INDUSTRIAL
Parallel
5.5V
4.5V
8kB
1
20 ns
8KX8
3-STATE
13b
64 kb
COMMON
17.9mm
3.556mm
7.6mm
2.67mm
无
符合RoHS标准
无铅
-
-
-
-
-
-
7164L20YG

Integrated Device Technology (IDT)

SRAM Chip Async Single 5V 64K-Bit 8K x 8 20ns 28-Pin SOJ

7 Weeks
-
28
RAM, SDR, SRAM - Asynchronous
2009
e3
yes
活跃
3 (168 Hours)
28
EAR99
Matte Tin (Sn) - annealed
70°C
0°C
DUAL
J BEND
260
1
5V
28
5V
5V
COMMERCIAL
Parallel
5.5V
4.5V
8kB
1
20 ns
8KX8
3-STATE
13b
64 kb
COMMON
17.9mm
3.556mm
7.6mm
2.67mm
无
符合RoHS标准
无铅
表面贴装
90mA
0.00006A
Asynchronous
8b
2V
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	7164S20TPGI	Integrated Device Technology (IDT)	存储器	PDIP	SRAM Chip Async Single 5V 64K-Bit 8K x 8 20ns 28-Pin PDIP	对比