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71V424S10YG备选型号: AS7C34096A-10JIN

71V424S10YG

Integrated Device Technology (IDT)

SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM

12 Weeks
表面贴装
36
RAM, SDR, SRAM - Asynchronous
2008
e3
yes
活跃
3 (168 Hours)
36
Matte Tin (Sn) - annealed
70°C
0°C
DUAL
J BEND
260
1
3.3V
36
3.3V
COMMERCIAL
Parallel
3.6V
3V
512kB
1
180mA
10 ns
3-STATE
19b
4 Mb
0.02A
COMMON
Asynchronous
8b
3V
23.4mm
3.76mm
10.2mm
2.2mm
无
符合RoHS标准
无铅
-
-
-
-
-
-
-
-
-
AS7C34096A-10JIN

Alliance Memory, Inc.

SRAM 4M, 3.3V, 10ns, FAST 512K x 8 Asynch SRAM

10 Weeks
-
36
Volatile
2001
-
-
活跃
3 (168 Hours)
-
-
85°C
-40°C
-
-
-
-
-
-
3.3V
-
Parallel
3.6V
3V
4Mb 512K x 8
1
-
10ns
-
19b
4 Mb
-
-
-
-
-
-
-
-
-
无
ROHS3 Compliant
无铅
表面贴装
36-BSOJ (0.400, 10.16mm Width)
36-SOJ
-40°C~85°C TA
Tube
3V~3.6V
SRAM
Parallel
10ns
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	71V424L10YG	Integrated Device Technology (IDT)	存储器		SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM	对比
	AS7C34096A-10JCN	Alliance Memory, Inc.	存储器	36-BSOJ (0.400, 10.16mm Width)	SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 10ns 36-Pin SOJ	对比
	AS7C34096A-10JIN	Alliance Memory, Inc.	存储器	36-BSOJ (0.400, 10.16mm Width)	SRAM 4M, 3.3V, 10ns, FAST 512K x 8 Asynch SRAM	对比