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71V67603S133BQGI备选型号: IS61NLP25636A-200B3I

71V67603S133BQGI

Integrated Device Technology (IDT)

SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 4.2ns 165-Pin CABGA

12 Weeks
YES
165
133MHz
2009
e1
yes
活跃
3 (168 Hours)
165
Tin/Silver/Copper (Sn/Ag/Cu)
85°C
-40°C
流水线结构
3.3V
BOTTOM
BALL
260
1
133MHz
30
INDUSTRIAL
Parallel
1.1MB
1
0.28mA
4.2 ns
256KX36
3-STATE
18b
9 Mb
0.07A
COMMON
3.465V
3.135V
15mm
13mm
1.2mm
无
符合RoHS标准
无铅
-
-
-
-
-
-
-
-
-
-
-
IS61NLP25636A-200B3I

ISSI, Integrated Silicon Solution Inc

IC SRAM 9M PARALLEL 165TFBGA

-
YES
165
Volatile
-
e0
no
最后一次购买
2 (1 Year)
165
Tin/Lead (Sn/Pb)
-
-
流水线结构
3.3V
BOTTOM
-
-
1
-
-
-
-
9Mb 256K x 36
4
-
3.1ns
256KX36
3-STATE
18b
9 Mb
0.05A
COMMON
-
3.135V
15mm
-
-
无
Non-RoHS Compliant
-
表面贴装
165-TFBGA
-40°C~85°C TA
Tray
3A991.B.2.A
1mm
200MHz
SRAM
Parallel
36
1.2mm
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图片	产品型号	品牌	分类	封装	描述	对比
	71V67803S133BQI	Integrated Device Technology (IDT)	存储器		SRAM Chip Sync Single 3.3V 9M-Bit 512K x 18 4.2ns 165-Pin CABGA	对比
	IS61NLP25636A-200B3I	ISSI, Integrated Silicon Solution Inc	存储器	165-TFBGA	IC SRAM 9M PARALLEL 165TFBGA	对比
	71V65603S133BQ	Integrated Device Technology (IDT)	存储器		SRAM Chip Sync Single 3.3V 9M-Bit 256K x 36 4.2ns 165-Pin CABGA Tray	对比