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AS4C128M16D2A-25BCN备选型号: IS43DR16320D-25DBL

AS4C128M16D2A-25BCN

Alliance Memory, Inc.

IC DRAM 2G PARALLEL 84FBGA

8 Weeks
表面贴装
84-TFBGA
84-FBGA (10.5x13.5)
Volatile
0°C~85°C TC
Tray
2015
活跃
3 (168 Hours)
85°C
0°C
1.7V~1.9V
400MHz
Parallel
2Gb 128M x 16
400MHz
DRAM
Parallel
15ns
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
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-
IS43DR16320D-25DBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 84TWBGA

8 Weeks
表面贴装
84-TFBGA
-
Volatile
0°C~70°C TA
Tray
-
活跃
3 (168 Hours)
-
-
1.8V
-
-
512Mb 32M x 16
400MHz
DRAM
Parallel
15ns
ROHS3 Compliant
-
YES
e1
84
EAR99
锡银铜
可编程赌场延迟
8542.32.00.28
BOTTOM
未说明
1
0.8mm
未说明
R-PBGA-B84
不合格
1.8V
1
SYNCHRONOUS
400ps
32MX16
3-STATE
16
0.025A
536870912 bit
COMMON
1.9V
1.7V
8192
48
48
12.5mm
1.2mm
8mm
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS43DR16320D-25DBLI	ISSI, Integrated Silicon Solution Inc	存储器	84-TFBGA	DRAM Chip DDR2 SDRAM 512M-Bit 32M x 16 1.8V 84-Pin TWBGA	对比
	IS43DR16320D-25DBL	ISSI, Integrated Silicon Solution Inc	存储器	84-TFBGA	IC DRAM 512M PARALLEL 84TWBGA	对比