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AS4C16M16S-6TCN备选型号: IS42S16160G-7TLI

AS4C16M16S-6TCN

Alliance Memory, Inc.

DRAM 256M SDRAM 16M X 16 166MHz

表面贴装
54-TSOP (0.400, 10.16mm Width)
54
54-TSOP II
Volatile
0°C~70°C TA
Tray
2010
Obsolete
3 (168 Hours)
70°C
0°C
3V~3.6V
166MHz
3.3V
Parallel
3.6V
3V
256Mb 16M x 16
166MHz
5.4ns
DRAM
Parallel
16b
12ns
13b
256 Mb
166MHz
无
符合RoHS标准
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS42S16160G-7TLI

ISSI, Integrated Silicon Solution Inc

Memory; SDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷85°C; 3.3VDC

表面贴装
54-TSOP (0.400, 10.16mm Width)
54
-
Volatile
-40°C~85°C TA
Tray
-
活跃
3 (168 Hours)
-
-
3V~3.6V
-
3.3V
-
-
-
256Mb 16M x 16
143MHz
5.4ns
DRAM
Parallel
16b
-
15b
256 Mb
-
无
ROHS3 Compliant
无铅
6 Weeks
Tin
表面贴装
e3
54
EAR99
AUTO/SELF REFRESH
DUAL
1
3.3V
0.8mm
54
3.6V
3V
1
130mA
16MX16
3-STATE
0.004A
COMMON
8192
1.05mm
22.42mm
10.29mm
无SVHC
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	MT48LC16M16A2P-7E:G	Micron Technology Inc.	存储器	54-TSOP (0.400, 10.16mm Width)	DRAM Chip SDRAM 256Mbit 16Mx16 3.3V Automotive 54-Pin TSOP-II	对比
	IS42S16160G-7TLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	Memory; SDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷85°C; 3.3VDC	对比
	IS42S16160G-6TLI-TR	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	DRAM 256M 16Mx16 166MHz SDRAM, 3.3v	对比