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AS4C16M16S-7TCN备选型号: MT46V16M16P-5B:M

AS4C16M16S-7TCN

Alliance Memory, Inc.

DRAM 256Mb, 3.3V, 143Mhz 16M x 16 SDRAM

表面贴装
表面贴装
54-TSOP (0.400, 10.16mm Width)
54
54-TSOP II
Volatile
0°C~70°C TA
Tray
Obsolete
3 (168 Hours)
70°C
0°C
3V~3.6V
143MHz
3.3V
Parallel
3.6V
3V
256Mb 16M x 16
100mA
143MHz
5.4ns
DRAM
Parallel
16b
14ns
15b
256 Mb
143MHz
1.1mm
22.35mm
10.29mm
无
符合RoHS标准
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT46V16M16P-5B:M

Micron Technology Inc.

DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.6V 66-Pin TSOP

表面贴装
表面贴装
66-TSSOP (0.400, 10.16mm Width)
66
-
Volatile
0°C~70°C TA
Tray
活跃
3 (168 Hours)
-
-
2.5V~2.7V
-
2.5V
-
-
-
256Mb 16M x 16
-
200MHz
700ps
DRAM
Parallel
16b
15ns
15b
256 Mb
400MHz
1.2mm
22.22mm
10.16mm
无
ROHS3 Compliant
无铅
4 Weeks
Tin
2012
e3
66
EAR99
AUTO/SELF REFRESH
8542.32.00.24
DUAL
260
1
2.6V
0.65mm
30
MT46V16M16
2.7V
2.6V
1
175mA
16MX16
3-STATE
0.004A
COMMON
8192
无SVHC
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16160G-7TLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	Memory; SDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II; -40÷85°C; 3.3VDC	对比
	IS42S16160G-7TL	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	DRAM 256M 16Mx16 143MHz SDR SDRAM, 3.3V	对比
	MT46V16M16P-5B:M	Micron Technology Inc.	存储器	66-TSSOP (0.400, 10.16mm Width)	DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.6V 66-Pin TSOP	对比