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AS4C16M16SA-6TIN备选型号: IS42S16160J-7TL-TR

AS4C16M16SA-6TIN

Alliance Memory, Inc.

IC DRAM 256M PARALLEL 54TSOP

8 Weeks
表面贴装
54-TSOP (0.400, 10.16mm Width)
YES
54
Volatile
-40°C~85°C TA
Tray
2014
e3
活跃
3 (168 Hours)
54
EAR99
Tin (Sn)
AUTO/SELF REFRESH
3V~3.6V
DUAL
未说明
1
3.3V
0.8mm
未说明
3.3V
3.6V
3V
256Mb 16M x 16
1
SYNCHRONOUS
166MHz
5ns
DRAM
Parallel
16MX16
16
12ns
13b
256 Mb
22.22mm
1.2mm
ROHS3 Compliant
无铅
-
IS42S16160J-7TL-TR

ISSI, Integrated Silicon Solution Inc

DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II T/R

6 Weeks
表面贴装
54-TSOP (0.400, 10.16mm Width)
YES
54
Volatile
0°C~70°C TA
Tape & Reel (TR)
-
-
活跃
3 (168 Hours)
54
-
-
AUTO/SELF REFRESH
3V~3.6V
DUAL
未说明
1
3.3V
0.8mm
未说明
3.3V
3.6V
3V
256Mb 16M x 16
1
SYNCHRONOUS
143MHz
5.4ns
DRAM
Parallel
16MX16
16
-
13b
256 Mb
22.22mm
1.2mm
ROHS3 Compliant
-
yes
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16160J-7TL-TR	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	DRAM Chip SDRAM 256M-Bit 16Mx16 3.3V 54-Pin TSOP-II T/R	对比
	MT48LC16M16A2P-7E:G	Micron Technology Inc.	存储器	54-TSOP (0.400, 10.16mm Width)	DRAM Chip SDRAM 256Mbit 16Mx16 3.3V Automotive 54-Pin TSOP-II	对比
	IS42S16160G-6TLI-TR	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	DRAM 256M 16Mx16 166MHz SDRAM, 3.3v	对比