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AS4C32M16D1-5BCN备选型号: MT47H64M8SH-25E:H

AS4C32M16D1-5BCN

Alliance Memory, Inc.

IC SDRAM 512MBIT 200MHZ 60BGA

8 Weeks
表面贴装
60-TFBGA
YES
60
Volatile
0°C~70°C TA
Tray
2013
活跃
3 (168 Hours)
60
EAR99
AUTO/SELF REFRESH
2.5V
BOTTOM
未说明
1
未说明
512Mb 32M x 16
1
SYNCHRONOUS
200MHz
700ps
DRAM
Parallel
32MX16
16
15ns
13b
512 Mb
2.7V
2.3V
13mm
1.2mm
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT47H64M8SH-25E:H

Micron Technology Inc.

IC SDRAM 512MBIT 400MHZ 60FBGA

-
表面贴装
60-TFBGA
-
60
Volatile
0°C~85°C TC
Bulk
2014
活跃
3 (168 Hours)
60
EAR99
AUTO/SELF REFRESH
1.8V
BOTTOM
260
1
30
512Mb 64M x 8
1
-
-
400ps
DRAM
Parallel
64MX8
8
15ns
14b
512 Mb
1.9V
1.7V
10mm
1.2mm
ROHS3 Compliant
-
Copper, Silver, Tin
表面贴装
e1
yes
Tin/Silver/Copper (Sn/Ag/Cu)
8542.32.00.28
0.8mm
MT47H64M8
8b
3-STATE
0.01A
400MHz
COMMON
8192
48
48
无
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