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AS4C32M16D1-5BIN备选型号: IS43R16160F-5BLI

AS4C32M16D1-5BIN

Alliance Memory, Inc.

IC DRAM 512M PARALLEL 60TFBGA

8 Weeks
表面贴装
60-TFBGA
YES
Volatile
-40°C~85°C TA
Tray
2014
活跃
3 (168 Hours)
60
EAR99
AUTO/SELF REFRESH
2.3V~2.7V
BOTTOM
未说明
1
2.5V
未说明
R-PBGA-B60
2.7V
2.3V
512Mb 32M x 16
1
SYNCHRONOUS
200MHz
700ps
DRAM
Parallel
32MX16
16
15ns
536870912 bit
13mm
1.2mm
8mm
ROHS3 Compliant
-
-
-
-
-
IS43R16160F-5BLI

ISSI, Integrated Silicon Solution Inc

DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA

8 Weeks
表面贴装
60-TFBGA
YES
Volatile
-40°C~85°C TA
Tray
-
活跃
3 (168 Hours)
60
-
AUTO/SELF REFRESH
2.3V~2.7V
BOTTOM
未说明
1
2.5V
未说明
-
2.7V
2.3V
256Mb 16M x 16
1
SYNCHRONOUS
200MHz
700ps
DRAM
Parallel
16MX16
16
15ns
-
13mm
1.2mm
-
ROHS3 Compliant
60
1mm
2.5V
13b
256 Mb
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图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16400J-5BL	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V 54-Pin TFBGA	对比
	IS43R16160F-5BLI	ISSI, Integrated Silicon Solution Inc	存储器	60-TFBGA	DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA	对比