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AS4C32M16D2A-25BIN备选型号: IS43DR16640B-25DBL-TR

AS4C32M16D2A-25BIN

Alliance Memory, Inc.

IC DRAM 512M PARALLEL 84FBGA

8 Weeks
表面贴装
84-TFBGA
YES
Volatile
-40°C~95°C TC
Tray
2014
活跃
3 (168 Hours)
84
EAR99
AUTO/SELF REFRESH
1.7V~1.9V
BOTTOM
1
1.8V
0.8mm
R-PBGA-B84
不合格
1.9V
1.8V
1.7V
512Mb 32M x 16
1
SYNCHRONOUS
400MHz
0.18mA
400ps
DRAM
Parallel
32MX16
3-STATE
16
15ns
0.008A
536870912 bit
COMMON
8192
48
48
12.5mm
1.2mm
8mm
ROHS3 Compliant
无铅
-
-
IS43DR16640B-25DBL-TR

ISSI, Integrated Silicon Solution Inc

DRAM 1G (64Mx16) 400MHz DDR2 1.8v

8 Weeks
表面贴装
84-TFBGA
YES
Volatile
0°C~70°C TA
Tape & Reel (TR)
-
活跃
3 (168 Hours)
84
-
-
1.7V~1.9V
BOTTOM
-
1.8V
0.8mm
-
不合格
-
1.8V
-
1Gb 64M x 16
-
-
400MHz
-
400ps
DRAM
Parallel
64MX16
3-STATE
16
15ns
0.015A
1073741824 bit
COMMON
8192
48
48
-
-
-
ROHS3 Compliant
-
84
16b
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS43DR16320D-3DBL	ISSI, Integrated Silicon Solution Inc	存储器	84-TFBGA	IC DRAM 512M PARALLEL 84TWBGA	对比
	IS43DR16320D-25DBL	ISSI, Integrated Silicon Solution Inc	存储器	84-TFBGA	IC DRAM 512M PARALLEL 84TWBGA	对比