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AS4C32M16SA-7BIN备选型号: IS42S32160F-7BLI

AS4C32M16SA-7BIN

Alliance Memory, Inc.

IC SDRAM 512MBIT 143MHZ 54BGA

8 Weeks
表面贴装
54-TFBGA
YES
Volatile
-40°C~85°C TA
Tray
2014
yes
最后一次购买
3 (168 Hours)
54
EAR99
AUTO/SELF REFRESH
3V~3.6V
BOTTOM
未说明
1
3.3V
0.8mm
未说明
S-PBGA-B54
3.6V
3V
512Mb 32M x 16
1
SYNCHRONOUS
143MHz
5.4ns
DRAM
Parallel
32MX16
16
2ns
536870912 bit
8mm
1.2mm
8mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
IS42S32160F-7BLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 90TFBGA

8 Weeks
表面贴装
90-TFBGA
YES
Volatile
-40°C~85°C TA
Tray
-
-
活跃
3 (168 Hours)
90
EAR99
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
3V~3.6V
BOTTOM
-
1
3.3V
0.8mm
-
R-PBGA-B90
3.6V
3V
512Mb 16M x 32
1
SYNCHRONOUS
143MHz
5.4ns
DRAM
Parallel
16MX32
32
-
536870912 bit
13mm
1.2mm
8mm
ROHS3 Compliant
8542.32.00.28
不合格
3.3V
3-STATE
0.004A
COMMON
8192
1248FP
1248
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS42S32160F-7BLI	ISSI, Integrated Silicon Solution Inc	存储器	90-TFBGA	IC DRAM 512M PARALLEL 90TFBGA	对比
	IS42S16100H-7BLI-TR	ISSI, Integrated Silicon Solution Inc	存储器	60-TFBGA	IC DRAM 16M PARALLEL 60TFBGA	对比