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AS4C32M16SA-7BINTR备选型号: IS42S16400J-7BLI

AS4C32M16SA-7BINTR

Alliance Memory, Inc.

IC SDRAM 512MBIT 143MHZ 54BGA

8 Weeks
表面贴装
54-TFBGA
Volatile
-40°C~85°C TA
Tape & Reel (TR)
2014
yes
活跃
3 (168 Hours)
3V~3.6V
未说明
unknown
未说明
512Mb 32M x 16
143MHz
5.4ns
DRAM
Parallel
2ns
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS42S16400J-7BLI

ISSI, Integrated Silicon Solution Inc

DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TFBGA

6 Weeks
表面贴装
54-TFBGA
Volatile
-40°C~85°C TA
Tray
-
-
活跃
3 (168 Hours)
3V~3.6V
-
-
-
64Mb 4M x 16
143MHz
5.4ns
DRAM
Parallel
-
ROHS3 Compliant
表面贴装
54
TF-BGA-54-8000X8000DE
e1
54
EAR99
Tin/Silver/Copper (Sn/Ag/Cu)
AUTO/SELF REFRESH
BOTTOM
1
3.3V
0.8mm
54
3.3V
3.6V
3V
1
70mA
16b
4MX16
3-STATE
16
14b
64 Mb
COMMON
4096
1248FP
1248
NO
YES
1.2mm
8mm
无
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图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16400J-7BLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TFBGA	对比
	IS42S16100H-7BLI-TR	ISSI, Integrated Silicon Solution Inc	存储器	60-TFBGA	IC DRAM 16M PARALLEL 60TFBGA	对比