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AS4C4M16S-6TAN备选型号: IS42S16400J-7TL

AS4C4M16S-6TAN

Alliance Memory, Inc.

DRAM 64Mb, 3.3V, 166Mhz 4M x 16 SDRAM

表面贴装
54-TSOP (0.400, 10.16mm Width)
YES
54
Volatile
-40°C~105°C TA
Tray
Automotive, AEC-Q100
2012
e3/e6
yes
Obsolete
3 (168 Hours)
54
EAR99
PURE MATTE TIN/TIN BISMUTH
AUTO/SELF REFRESH
3V~3.6V
DUAL
260
1
3.3V
0.8mm
40
54
3.3V
3.6V
3V
64Mb 4M x 16
1
SYNCHRONOUS
85mA
166MHz
5.4ns
DRAM
Parallel
16b
4MX16
16
2ns
14b
64 Mb
22.22mm
1.2mm
符合RoHS标准
无铅
-
-
-
-
-
-
-
-
-
-
-
-
IS42S16400J-7TL

ISSI, Integrated Silicon Solution Inc

IC DRAM 64M PARALLEL 54TSOP

表面贴装
54-TSOP (0.400, 10.16mm Width)
-
54
Volatile
0°C~70°C TA
Tray
-
-
e3
-
活跃
3 (168 Hours)
54
EAR99
-
AUTO/SELF REFRESH
3V~3.6V
DUAL
-
1
3.3V
0.8mm
-
54
3.3V
3.6V
3V
64Mb 4M x 16
1
-
90mA
143MHz
5.4ns
DRAM
Parallel
16b
4MX16
16
-
14b
64 Mb
22.22mm
1.2mm
ROHS3 Compliant
-
6 Weeks
Tin
表面贴装
90mA
3-STATE
COMMON
4096
1248FP
1248
NO
YES
无
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16400J-7TL	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	IC DRAM 64M PARALLEL 54TSOP	对比
	IS42S16400J-6TL	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	IC DRAM 64M PARALLEL 54TSOP	对比