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AS4C64M8D2-25BIN备选型号: IS43DR16640B-25DBL-TR

AS4C64M8D2-25BIN

Alliance Memory, Inc.

IC SDRAM 512MBIT 400MHZ 60BGA

8 Weeks
表面贴装
60-TFBGA
YES
Volatile
-40°C~85°C TA
Tray
2014
活跃
3 (168 Hours)
60
EAR99
AUTO/SELF REFRESH
8542.32.00.28
1.7V~1.9V
BOTTOM
未说明
1
1.8V
0.8mm
未说明
R-PBGA-B60
1.9V
1.7V
512Mb 64M x 8
1
SYNCHRONOUS
400MHz
400ps
DRAM
Parallel
64MX8
8
15ns
536870912 bit
10mm
1.2mm
8mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
IS43DR16640B-25DBL-TR

ISSI, Integrated Silicon Solution Inc

DRAM 1G (64Mx16) 400MHz DDR2 1.8v

8 Weeks
表面贴装
84-TFBGA
YES
Volatile
0°C~70°C TA
Tape & Reel (TR)
-
活跃
3 (168 Hours)
84
-
-
-
1.7V~1.9V
BOTTOM
-
-
1.8V
0.8mm
-
-
-
-
1Gb 64M x 16
-
-
400MHz
400ps
DRAM
Parallel
64MX16
16
15ns
1073741824 bit
-
-
-
ROHS3 Compliant
84
不合格
1.8V
16b
3-STATE
0.015A
COMMON
8192
48
48
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS43DR16640B-25DBL-TR	ISSI, Integrated Silicon Solution Inc	存储器	84-TFBGA	DRAM 1G (64Mx16) 400MHz DDR2 1.8v	对比
	IS43DR16320D-25DBLI	ISSI, Integrated Silicon Solution Inc	存储器	84-TFBGA	DRAM Chip DDR2 SDRAM 512M-Bit 32M x 16 1.8V 84-Pin TWBGA	对比