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AS4C8M16S-6TAN备选型号: MT48LC8M16A2P-6A:L

AS4C8M16S-6TAN

Alliance Memory, Inc.

DRAM 128Mb, 3.3V, 166Mhz 8M x 16 SDRAM

表面贴装
54-TSOP (0.400, 10.16mm Width)
YES
54
Volatile
-40°C~105°C TA
Tray
2012
e3/e6
yes
Obsolete
3 (168 Hours)
54
EAR99
PURE MATTE TIN/TIN BISMUTH
AUTO/SELF REFRESH
3V~3.6V
DUAL
260
1
3.3V
0.8mm
40
54
3.3V
3.6V
3V
128Mb 8M x 16
1
SYNCHRONOUS
120mA
166MHz
5ns
DRAM
Parallel
16b
8MX16
16
2ns
14b
128 Mb
22.22mm
1.2mm
符合RoHS标准
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT48LC8M16A2P-6A:L

Micron Technology Inc.

DRAM Chip SDRAM 128Mbit 8Mx16 3.3V 54-Pin TSOP-II Tray

表面贴装
54-TSOP (0.400, 10.16mm Width)
-
54
Volatile
0°C~70°C TA
Bulk
2003
e3
-
活跃
3 (168 Hours)
54
EAR99
-
AUTO/SELF REFRESH
3V~3.6V
DUAL
260
1
3.3V
0.8mm
30
54
3.3V
3.6V
3V
128Mb 8M x 16
1
-
-
167MHz
5.4ns
DRAM
Parallel
16b
8MX16
-
12ns
14b
128 Mb
22.22mm
-
ROHS3 Compliant
无铅
4 Weeks
Tin
表面贴装
MT48LC8M16A2
165mA
3-STATE
0.0025A
COMMON
85°C
70°C
4096
1.2mm
10.16mm
无
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16800F-6TLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	DRAM 128M 8Mx16 166Mhz SDR SDRAM, 3.3V	对比
	MT48LC8M16A2P-6A:L	Micron Technology Inc.	存储器	54-TSOP (0.400, 10.16mm Width)	DRAM Chip SDRAM 128Mbit 8Mx16 3.3V 54-Pin TSOP-II Tray	对比
	IS42S81600F-6TLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	DRAM 128M 16Mx8 166Mhz SDR SDRAM, 3.3V	对比