登录 / 注册

产品

输入型号/关键词

AS4C8M16SA-7BCN备选型号: IS42S16160J-7BLI

AS4C8M16SA-7BCN

Alliance Memory, Inc.

IC DRAM 128M PARALLEL 54TFBGA

8 Weeks
表面贴装
54-TFBGA
YES
Volatile
0°C~70°C TA
Tray
2014
活跃
3 (168 Hours)
54
EAR99
AUTO/SELF REFRESH
3V~3.6V
BOTTOM
未说明
1
3.3V
0.8mm
未说明
S-PBGA-B54
3.6V
3V
128Mb 8M x 16
1
SYNCHRONOUS
143MHz
5.4ns
DRAM
Parallel
8MX16
16
14ns
134217728 bit
8mm
1.2mm
8mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
IS42S16160J-7BLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 54TFBGA

6 Weeks
表面贴装
54-TFBGA
-
Volatile
-40°C~85°C TA
Tray
-
活跃
3 (168 Hours)
54
-
AUTO/SELF REFRESH
3V~3.6V
BOTTOM
-
1
3.3V
0.8mm
-
-
3.6V
3V
256Mb 16M x 16
1
SYNCHRONOUS
143MHz
5.4ns
DRAM
Parallel
16MX16
16
-
-
8mm
1.2mm
-
ROHS3 Compliant
表面贴装
Copper, Silver, Tin
54
e1
Tin/Silver/Copper (Sn/Ag/Cu)
3.3V
16b
13b
256 Mb
添加型号

集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16400J-7BLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TFBGA	对比
	IS42S16100H-7BLI-TR	ISSI, Integrated Silicon Solution Inc	存储器	60-TFBGA	IC DRAM 16M PARALLEL 60TFBGA	对比