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AS4C8M16SA-7TCN备选型号: IS42S16100H-7TLI

AS4C8M16SA-7TCN

Alliance Memory, Inc.

IC DRAM 128M PARALLEL 54TSOP

8 Weeks
表面贴装
54-TSOP (0.400, 10.16mm Width)
YES
Volatile
0°C~70°C TA
Tray
2014
活跃
3 (168 Hours)
54
EAR99
AUTO/SELF REFRESH
3V~3.6V
DUAL
未说明
1
3.3V
0.8mm
未说明
R-PDSO-G54
3.6V
3V
128Mb 8M x 16
1
SYNCHRONOUS
143MHz
5.4ns
DRAM
Parallel
8MX16
16
14ns
134217728 bit
22.22mm
1.2mm
10.16mm
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
IS42S16100H-7TLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 16M PARALLEL 50TSOP II

6 Weeks
表面贴装
50-TSOP (0.400, 10.16mm Width)
YES
Volatile
-40°C~85°C TA
Tray
-
活跃
3 (168 Hours)
50
EAR99
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
3V~3.6V
DUAL
-
1
3.3V
0.8mm
-
R-PDSO-G50
3.6V
3V
16Mb 1M x 16
1
SYNCHRONOUS
143MHz
5.5ns
DRAM
Parallel
1MX16
16
-
16777216 bit
20.95mm
1.2mm
10.16mm
ROHS3 Compliant
-
不合格
3.3V
3-STATE
0.0035A
COMMON
2048
1248FP
1248
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图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16400J-7TL	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	IC DRAM 64M PARALLEL 54TSOP	对比
	IS42S16400J-7TLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	IC DRAM 64M PARALLEL 54TSOP	对比
	MD56V62160M-7TAZ0AX	ROHM Semiconductor	存储器	54-TSOP (0.400, 10.16mm Width)	IC DRAM 64M PARALLEL 54TSOP	对比