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AS4C8M16SA-7TCN备选型号: IS42S16400J-7TL

AS4C8M16SA-7TCN

Alliance Memory, Inc.

IC DRAM 128M PARALLEL 54TSOP

8 Weeks
表面贴装
54-TSOP (0.400, 10.16mm Width)
YES
Volatile
0°C~70°C TA
Tray
2014
活跃
3 (168 Hours)
54
EAR99
AUTO/SELF REFRESH
3V~3.6V
DUAL
未说明
1
3.3V
0.8mm
未说明
R-PDSO-G54
3.6V
3V
128Mb 8M x 16
1
SYNCHRONOUS
143MHz
5.4ns
DRAM
Parallel
8MX16
16
14ns
134217728 bit
22.22mm
1.2mm
10.16mm
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS42S16400J-7TL

ISSI, Integrated Silicon Solution Inc

IC DRAM 64M PARALLEL 54TSOP

6 Weeks
表面贴装
54-TSOP (0.400, 10.16mm Width)
-
Volatile
0°C~70°C TA
Tray
-
活跃
3 (168 Hours)
54
EAR99
AUTO/SELF REFRESH
3V~3.6V
DUAL
-
1
3.3V
0.8mm
-
-
3.6V
3V
64Mb 4M x 16
1
-
143MHz
5.4ns
DRAM
Parallel
4MX16
16
-
-
22.22mm
1.2mm
-
ROHS3 Compliant
-
Tin
表面贴装
54
e3
54
3.3V
90mA
90mA
16b
3-STATE
14b
64 Mb
COMMON
4096
1248FP
1248
NO
YES
无
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图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16100H-7TLI	ISSI, Integrated Silicon Solution Inc	存储器	50-TSOP (0.400, 10.16mm Width)	IC DRAM 16M PARALLEL 50TSOP II	对比
	IS42S16400J-7TLI	ISSI, Integrated Silicon Solution Inc	存储器	54-TSOP (0.400, 10.16mm Width)	IC DRAM 64M PARALLEL 54TSOP	对比
	MD56V62160M-7TAZ0AX	ROHM Semiconductor	存储器	54-TSOP (0.400, 10.16mm Width)	IC DRAM 64M PARALLEL 54TSOP	对比